SSM6L13TU

SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications • • • • • • 1.8-V drive N–ch , P–ch 2–in–1 Low ON–resistance: Nch : Pch 2.1±0.1 1.7±0.1 0.65 0.65 Unit: mm 2.0±0.1 1.3±0.1 RDS(ON) = 235 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 178 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 460 mΩ (max) (@VGS = −1.8 V) RDS(ON) = 306 mΩ (max) (@VGS = −2.5 V) 1 2 3 6 5 4 Q1 Absolute Maximum Ratings (Ta = 25 °C) Drain-source voltage Gate-source voltage Drain current DC Pulse VDS VGSS ID IDP 20 ±12 0.8 1.6 V V A 0.7±0.05 Characteristic Symbol Rating Unit Q2 Absolute Maximum Ratings (Ta = 25 °C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating −20 ±8 −0.8 −1.6 Unit V V A 1.Source1 2.Gate1 UF6 3.Drain2 JEDEC JEITA TOSHIBA Weight: 7 mg (typ.) 4.Source2 5.Gate2 6.Drain1 ― ― 2-2T1B (Ta = 25 °C) Absolute Maximum Ratings (Q1 , Q2 Common) Characteristic Power dissipation Channel temperature Storage temperature range Symbol PD (Note 1) Tch Tstg Rating 500 150 −55 to 150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 KV 1 2 3 1 Q1 Q2 2 3 1 2010-07-10 +0.06 0.16-0.05 +0.1 0.3-0.05 SSM6L13TU Q1 Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ Test Conditions ID = 1 mA, VGS = 0 ID = 1 mA, VGS = − 12 V VDS = 20 V, VGS = 0 VGS = ± 12 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 0.6 A ID = 0.6 A, VGS = 4.0 V Drain-source ON-resistance RDS (ON) ID = 0.4 A, VGS = 2.5 V ID = 0.2 A, VGS = 1.8 V Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Ciss Coss Crss ton toff VDSF (Note 2) (Note 2) (Note 2) (Note 2) Min 20 10 ⎯ ⎯ 0.4 2.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ (Note 2) ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 3.75 116 134 160 268 44 34 9 16 − 0.8 Max ⎯ ⎯ 1 ±1 1.0 ⎯ 143 178 235 ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF ns V mΩ Unit V μA μA V S VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.25 A, VGS = 0 to 2.5 V, RG = 4.7 Ω ID = − 0.8 A, VGS = 0 V Drain-source forward voltage − 1.15 Note 2 : Pulse test Q2 Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ Test Conditions ID = − 1 mA, VGS = 0 ID = − 1 mA, VGS = + 8 V VDS = − 20 V, VGS = 0 VGS = ± 8 V, VDS = 0 VDS = − 3 V, ID = − 1 mA VDS = − 3 V, ID = − 0.6 A ID = − 0.6 A, VGS = − 4.0 V Drain-source ON-resistance RDS (ON) ID = − 0.4 A, VGS = − 2.5 V ID = − 0.1 A, VGS = − 1.8 V Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Ciss Coss Crss ton toff VDSF (Note 2) (Note 2) (Note 2) (Note 2) Min − 20 − 12 ⎯ ⎯ − 0.3 1.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ (Note 2) ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 2.5 175 230 300 250 45 35 12 18 0.85 Max ⎯ ⎯ − 10 ±1 − 1.0 ⎯ 234 306 460 ⎯ ⎯ ⎯ ⎯ ⎯ 1.2 pF pF pF ns V mΩ Unit V μA μA V S VDS = − 10 V, VGS = 0, f = 1 MHz VDS = − 10 V, VGS = 0, f = 1 MHz VDS = − 10 V, VGS = 0, f = 1 MHz VDD = − 10 V, ID = − 0.25 A, VGS = 0 to − 2.5 V, RG = 4.7 Ω ID = 0.8 A, VGS = 0 V Drain-source forward voltage Note 2: Pulse test 2 2010-07-10 SSM6L13TU Q1 Switching Time Test Circuit (a) Test Circuit (b) VIN OUT IN 0V RG 10 μs VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25 °C 10 % 2.5 V 90 % 2.5 V 0 VDD (c) VOUT VDD 90 % 10 % tr ton tf toff VDS (ON) Q2 Switching Time Test Circuit (a) Test Circuit 0 IN RG RL VDD −2.5 V 10 % OUT (b) VIN 0V 90 % − 2.5 V 10 μs (c) VOUT VDS (ON) 90 % 10 % tr ton toff tf VDD = - 10 V RG = 4.7 Ω Duty ≤ 1 % VIN: tr, tf < 5 ns Common Source Ta = 25 °C VDD Q1 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID= 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on). ) Take this into consideration when using the device. Q2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID= − 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on). ) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. 3 2010-07-10 SSM6L13TU Q1 Data 2 ID - VDS 10 4 2.5 1.8 1.5 10 ID - VGS Drain current ID (A) ドレイン電流 ID (A) Drain current ID (A) ドレイン電流 ID (A) 1 Ta=85°C 0.1 1 VGS=1.2V Common Source ソース接地 Ta = 25 °C 0.01 25°C 0.001 -25°C Ta=25℃ Pulse test Common Source VDS = 3 V ソース接地 Pulse test 0 0 0.2 0.4 0.6 0.8 1 0.0001 0 VDS=3V Drain–source voltage VDS ((V) ドレイン・ソース間電圧 VDS V) 1 Gate–source voltage VGS VGS (V) (V) ゲート・ソース間電圧 2 RDS(ON) - VGS 300 ソース接地 Common Source Ta=25°C Ta = 25 °C 300 Cソース接地 ommon Source RDS(ON) - Ta ドレイン・ソース間オン抵抗 Drain–source ON-resistance RDS (ON) (mΩ) RDS(ON) (mΩ) 200 0.6A 0.4A Drain–source ON-resistance Pulse test RDS (ON) (mΩ) ドレイン・ソース間オン抵抗 RDS(ON)　(mΩ) 250 200 150 100 50 0 Pulse test 1.8V,0.2A 2.5V,0.4A 100 ID=0.2A VGS=4V,ID=0.6A 0 0 1 2 3 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 Gate–source voltage ゲート・ソース間電圧 VVGS (V) GS (V) Ambient temperature Ta (°C) 周囲温度　Ta(℃) 300 RDS(ON) - ID 1 Vth - Ta Common Source ソース接地 VDS = 3 V ID=1mA ID = 1 mA Vth (V) ドレイン・ソース間オン抵抗 RDS (ON) (mΩ) RDS(ON) (mΩ) Drain–source ON-resistance Gate threshold voltage 200 1.8V 2.5V VGS=4V ゲートしきい値電圧　Vth(V) 0.8 VDS=3V 0.6 0.4 100 Common Source Ta =ソース 接地 25 °C 0.2 0 0 1 Pulse test Ta=25℃ 0 2 -60 -40 -20 0 20 40 60 80 100 120 140 160 周囲温度　Ta(℃) Drain current I (A) ドレイン電流 DID (A) Ambient temperature Ta (°C) 4 2010-07-10 SSM6L13TU Q1 Data 10.0 (S) |Yfs| - ID 10 Common Source IDR - VDS VGS= 0V VGS=0V Ta = 25 °C ソース接地 Ta=25℃ D 順方向伝達アドミタンス |Yfs| (S) Forward transfer admittance ⎪Yfs⎪ 25°C -25°C 1.0 Ta=85°C ドレイン逆電流 IDR ( Drain reverse current IDR (A) A) 1 Pulse test G IDR 25°C Ta=85°C -25°C 0.1 S Common Source ソース接地 VDS = 3 V IDVDS=3V = 1 mA 0.01 Ta=25℃ Pulse test 0.1 0.01 0.1 1 Drain current ID (A) ドレイン電流 ID (A) 10 0.001 0 -0.2 -0.4 -0.6 -0.8 ドレイン・ソース間電圧 VDS (V) VDS (V) Drain–source voltage t - ID Common Source ソ ース接地 VDD = 10 V VDD=10V VGS = 0 to 2.5 V VGS=0～2.5V Ta = 25 °C -1 1000 C - VDS 1000 Capacitance C 静電容量 C (pF) (pF) Switching time (ns) スイッチング時間 tt (ns) Ciss toff 100 Ta=25℃ 100 tf ton tr 10 Common Source ソ ース接地 Ta =VGS=0V 25 °C f = 1 MHz f=1MHz VGS = 0 V Coss Crss 10 0.1 Ta=25℃ 1 10 100 1 0.01 Drain-source voltage V VDS (V) ドレイン・ソース間電圧 DS (V) 0.1 1 ドレイン電流 D (A) Drain current IID (A) 10 5 2010-07-10 SSM6L13TU Q2 Data -2 -10 Drain current ID IDA) ( (A) ドレイン電流 ID - VDS -4.0 -2.5 -10 ID - VGS -1 -1.8 Drain current ID (A) ドレイン電流 ID (A) -0.1 Ta=85°C -1 -1.5 -0.01 25°C -0.001 -25°C Common Source ソース接地 VDS = -3 V Pulse test Common Source VGS=-1.2V ソース接地 Ta = 25 °C Ta=25℃ VDS=-3V -0 0 Pulse test -0.0001 -1.0 0 -0.0 -0.2 -0.4 -0.6 -0.8 0 -0 Drain–source voltage VDS (V) ドレイン・ソース間電圧 VDS (V) -1 Gate–source voltage VGS (V) ゲート・ソース間電圧 VGS (V) -2 RDS(ON) - VGS 500 -0.6 A -0.4A Cソース接地 ommon Source Ta = 25 °C Ta=25°C 500 Common Source ソース接地 Pulse test Pulse test RDS(ON) - Ta Drain–source ON-resistance ドレイン・ソース間オン抵抗 RDS (ON) (mΩ) ) RDS(ON) (mΩ ドレイン・ソース間オン抵抗 RDS (ON) (mΩ) RDS(ON) 　(mΩ) Drain–source ON-resistance 400 400 300 -1.8V,-0.1A 300 200 ID=-0.1A 200 100 -2.5V,-0.4A VGS=-4V,ID=-0.6A 100 0 -0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 ゲート・ソース間電圧 VGS (V) Gate–source voltage VGS (V) RDS(ON) - ID 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 周囲温度　Ta(℃) Ambient temperature Ta (°C) 400 350 Drain–source ON-resistance ドレイン・ソース間オン抵抗 RDS (ON) (mΩ) RDS(ON) (mΩ) -1 Vth - Ta Cソース接地 ommon Source VDS = -3 V ID=-1mA ID = -1 mA 300 250 200 150 100 50 0 Common Source Ta = 25°C ソース接地 Pulse test Ta=25℃ -2.5V VGS=-4V Gate threshold voltage Vth (V) ゲートしきい値電圧　Vth(V) -1.8V -0.8 VDS=-3V -0.6 -0.4 -0.2 -0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 -0 Drain current ID (A) ドレイン電流 ID (A) -1 -2 Ambient temperature Ta (°C) 周囲温度　Ta(℃) 6 2010-07-10 SSM6L13TU Q2 Data 10.0 (S) ⎪Yfs⎪ |Yfs| - ID (A) 10 Common Source Vソース接地 GS=0V VGS=0V Ta = 25°C IDR - VDS ドレイン逆電流 IDRDR (A) 順方向伝達アドミタンス 25°C -25°C 1.0 Ta=85°C 1 Ta=25℃ Pulse test Forward transfer admittance |Yfs| (S) Drain reverse current I 25°C 0.1 Ta=85°C 0.01 -25°C Common Source ソース接地 VDS = -3 V VDS=-3V Ta = 25°C Ta=25℃ Pulse test 0.1 -0.01 -0.1 -1 -10 Drain current D (A) ドレイン電流 IID (A) 0.001 0 0.2 0.4 0.6 0.8 Drain–source voltage V VDS (V) ドレイン・ソース間電圧 DS (V) t - ID Common Source ソ ース接地 VDD = -10 V VDD=-10V VGS = 0 to -2.5 V VGS=0～-2.5V Ta = 25 °C RG Ta=25℃ = 4.7Ω 1 1000 C - VDS 1000 静電容量 C (pF) (pF) Capacitance C Switching time t (ns) スイッチング時間 t (ns) Ciss toff 100 100 tf ton tr 10 Common Source ソ ース接地 Ta = 25 °C VGS=0V f = 1 MHz f=1MHz VGS = 0 V Coss Crss 10 -0.1 Ta=25℃ -1 -10 -100 1 -0.01 -0.1 -1 -10 Drain-source voltage V VDS (V) ドレイン・ソース間電圧 DS (V) ドレイン電流 ID A) Drain current ID ((A) 800 Ppower許容損失 PD(mW) dissipation PD (mW) ② 600 ① ①FR4基板実装時1.6mm) (25.4mm × 25.4mm × Cu Pad : 645 mm2) (25.4mm×25.4mm×1.6t) (2): Mounted on ceramic board Cu(25.4mm :645mm2 0.8mm) Pad × 25.4mm × ②ｾﾗﾐｯｸ基板実装時 Cu Pad : 645 mm2) (25.4mm×25.4mm×0.8t) Cu Pad :645mm 2 (1): Mounted on FR4 board * Transient 過渡熱抵抗 rth (°Cr/W) (°C/W ) thermal impedance th 1000 PD - Ta rth - tw 1000 c b 100 a Single pulse a : Mounted on ceramic board 400 200 0 0 20 40 60 80 100 120 140 160 (°C) Ambient temperature Ta 周囲温度 Ta(℃) 10 (25.4mm×25.4mm×0.8mm) Cu Pad :25.4mm×25.4mm b : Mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm c : Mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :0.45mm×0.8mm×3 1 0.001 0.01 0.1 1 tw 10 (s) 100 1000 Pulse width 7 2010-07-10 SSM6L13TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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