TLP176GA(F)

TLP176GA TOSHIBA Photocoupler Photorelay TLP176GA PBX Telecommunication Modem･FAX Cards, Modems In PC Measurement Instrumentation Unit: mm The TOSHIBA TLP176GA consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP176GA is suitable for the modem applications which require space savings. • 4 pin SOP (2.54SOP4): 2.1 mm high, 2.54 mm pitch • 1-form-A • Peak off-state voltage: 400 V (min) • Trigger LED current: 3 mA (max) • On-state current: 120 mA (max) • On-state resistance: 35 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 JEDEC ― • VDE-approved: EN 60747-5-5 JEITA ― (Note 1) TOSHIBA Note 1: When a VDE approved type is needed, please designate the Option(V4). 11-5H1 Weight: 0.1 g (typ.) Pin Configuration (top view) 1 4 2 3 1: ANODE 2: CATHODE 3: DRAIN 4: DRAIN Start of commercial production © 2019 Toshiba Electronic Devices & Storage Corporation 1 2001-06 2019-06-17 TLP176GA Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA ∆IF/°C −0.5 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD /°C -0.5 mW/°C Tj 125 °C VOFF 400 V ION 120 mA ∆ION/°C −1.2 mA/°C PC 350 mW ΔPC / °C −3.5 mW / °C Tj 125 °C Forward current LED Forward current derating (Ta≥25°C) Diode power dissipation derating (Ta ≥25°C) Junction temperature Off-state output terminal voltage Detector On-state current On-state current derating (Ta≥25°C) Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Junction temperature Operating temperature range Topr −40 to 85 °C Storage temperature range Tstg −55 to 125 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H.≤ 60 %) BVS 1500 Vrms (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins shorted together, and DETECTOR side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ― ― 320 V Forward current IF 5 7.5 25 mA On-state current ION ― ― 120 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) LED Characteristics Detector Min Typ. Max Unit Forward voltage Symbol VF IF = 10 mA Test Condition 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA Capacitance CT V = 0 V, f = 1 MHz  30  pF Off-state current IOFF VOFF = 400 V   1 μA Capacitance COFF V = 0 V, f = 1 MHz  70  pF © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP176GA Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT ION = 120 mA  1 3 mA Return LED current IFC IOFF = 100 μA 0.1   mA On-state resistance RON ION = 120 mA, IF = 5 mA  17 35 Ω Test Condition Min Typ. Max Unit  0.8  pF 1014  Ω 1500   Vrms Min Typ. Max Unit  0.3 1 ms  0.1 1 ms Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H.≤ 60 % Isolation voltage BVS AC, 60 s 5× 1010 Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) Note 2: Switching time test circuit IF 1 4 RL VDD IF VOUT 2 3 VOUT 90% 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 tOFF 2019-06-17 TLP176GA IF – Ta ION – Ta 280 (mA) 240 80 ION 60 On-state current Allowable forward current IF (mA) 100 40 20 200 160 120 80 40 0 −20 0 20 40 60 80 100 0 −20 120 0 Ambient temperature Ta (°C) 20 40 80 100 120 Ambient temperature Ta (°C) I F – VF ION – VON 100 200 Ta = 25°C Ta = 25°C 50 IF = 5 mA (mA) (mA) 30 100 ION 10 5 On-state current Forward current IF 60 3 1 0.5 0 −100 0.3 0.1 0.6 0.8 1 1.2 Forward voltage 1.4 VF 1.6 −200 −3 1.8 −2 (V) −1 RON – Ta 3 (V) IFT – Ta ION = 120 mA t