TLP227G(N,F)

TOSHIBA Photocoupler Photo Relay TLP227G,TLP227G−2 TLP227G, TLP227G−2 Cordless Telephone PBX Modem Unit: mm TLP227G The TOSHIBA TLP227G series consist of an infrared emitting diode optically coupled to a photo−MOS FET in a plastic DIP package. The TLP227G series are a bi−directional switch which can replace mechanical relays in many applications. • TLP227G: 4 pin DIP(DIP4), 1 channel type(1 form A) • TLP227G−2: 8 pin DIP(DIP8), 2 channel type(2 form A) • Peak off−state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On−state current: 120 mA (max) • On−state resistance: 35 Ω (max) • Isolation voltage: 2500 Vrms (min) • Isolation thickness: 0.4mm(min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A TOSHIBA 11−5B2S Weight: 0.26g (typ.) 1 Form A File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1) Note 1 : When a VDE approved type is needed, please designate the Option(V4). 4 3 1 2 TLP227G-2 Pin Configuration (top view) TLP227G-2 TLP227G 1 4 2 3 1: Anode 2: Cathode 3: Drain 1 4: Drain 2 1 8 2 7 1, 3: Anode 2, 4: Cathode 5: Drain 1 3 6 6: Drain 2 TOSHIBA 7: Drain 3 8: Drain 4 4 11−10C4S Weight: 0.54g (typ.) 2 Form A 5 8 5 1 4 Internal Circuit (TLP227G) 1 4 2 3 © 2019 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1995-11 1 2019-06-17 TLP227G,TLP227G−2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating IF 50 mA ΔIF / °C −0.5 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD /°C -0.5 mW/°C Tj 125 °C VOFF 350 V Forward current LED Forward current derating (Ta ≥ 25°C) Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage TLP227G Detector On-state current On-state current derating(Ta ≥ 25°C) TLP227G−2 120 One channel Both channel 120 ION (Note 1) Output power dissipation Output power dissipation derating (Ta ≥ 25°C) mA 100 TLP227G TLP227G−2 Unit −1.2 One channel Both channel −1.2 ΔION / °C mA / °C −1.0 (Note 1) TLP227G 432 PO TLP227G−2 TLP227G 600 −4.32 ΔPO / °C TLP227G−2 Junction temperature -6.0 mW mW / °C Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 2500 Vrms Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Supply voltage Symbol Min Typ. Max Unit VDD ― ― 280 V Forward current IF 5 7.5 25 mA On-state current ION ― ― 100 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP227G,TLP227G−2 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT VF = 0 V, f = 1 MHz ― 30 ― pF Off−state current IOFF VOFF = 350 V ― — 1 μA Capacitance COFF V = 0 V, f = 1 MHz ― 40 ― pF Min Typ. Max Unit ION = 120 mA ― 2 3 mA ION = 120 mA, IF = 5 mA ― 22 35 ION = 20 to 120 mA, IF = 5 mA ― 26 40 IOFF = 100 μA 0.1   mA Min Typ. Max Unit ― 0.8 ― pF 5×1010 1014 ― Ω 2500 ― ― Vrms Min Typ. Max Unit ― 0.3 1 ― 0.1 1 Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Trigger LED current IFT On−state resistance RON Return LED current IFC Test Condition Ω Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance VS = 0 V, f = 1MHz RS Isolation voltage Test Condition VS = 500 V, R.H. ≤ 60 % BVS AC, 60 s Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn−on time tON Turn−off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 3) ms (Note 3) : Switching Time Test Circuit IF TLP227G 1 4 2 3 RL VDD IF VOUT VOUT tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 90% 10% tOFF 2019-06-17 TLP227G,TLP227G−2 IF – Ta ION – Ta 60 40 20 0 －20 (mA) 80 120 ION 140 100 Allowable On-state current Allowable forward current IF (mA) 100 0 20 40 60 80 100 80 60 40 20 0 －20 120 0 20 Ambient temperature Ta (°C) (mA) 500 Forward current IF Allowable pulse forward current IFP (mA) Ta = 25°C 50 1000 300 100 50 30 10 100 IF –VF 100 Pulse width ≤ 100μs Ta = 25°C 3000 80 60 Ambient temperature Ta (°C) IFP – DR 5000 40 30 10 5 3 1 0.5 0.3 10－3 0.1 0.6 100 10－1 10－2 0.8 Duty cycle ratio DR 1.0 1.2 Forward voltage ΔVF / ΔTa – IF 1.4 VF 1.6 1.8 2.6 3.0 (V) IFP – VFP 1000 (mA) IFP －2.4 －2.0 Pulse forward current Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) －2.8 －1.6 －1.2 －0.8 －0.4 0.1 0.3 0.5 1 3 Forward current 5 IF 10 (mA) 30 50 500 300 100 50 30 10 Pulse width ≤ 10μs 5 Repetitive 3 1 0.6 frequency = 100Hz Ta = 25°C 1.0 1.4 1.8 2.2 Pulse forward voltage VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 4 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP227G,TLP227G−2 Relative IFT – Ta 3.0 ION – VON 200 ION = 120mA (mA) 1.5 1.0 0.5 0 100 ION 2.0 On-state current Relative trigger LED current IFT / IFT (Ta = 25°C) 2.5 Ta = 25°C IF = 5mA －20 0 20 40 60 80 0 －100 －200 －4 100 0 －2 Ambient temperature Ta (°C) On-state voltage VON RON – Ta 60 ION = 120mA (V) VOFF = 350V 500 (nA) 300 40 IOFF 50 100 30 Off-state current (Ω) On-state resistance RON 4 IOFF – Ta 1000 IF = 5mA 30 20 10 0 2 50 10 5 3 －20 0 20 40 60 80 1 －20 100 Ambient temperature Ta (°C) 0 20 40 60 80 100 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-17 TLP227G,TLP227G−2 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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