TLP227G-2

TLP227G,TLP227G−2 TOSHIBA Photocoupler Photo Relay TLP227G,TLP227G−2 Cordless Telephone PBX Modem The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a plastic DIP package. The TLP227G series are a bi−directional switch which can replace mechanical relays in many applications. • • • • • • • • • • TLP227G: 4 pin DIP(DIP4),1 channel type(1 form A) TLP227G−2: 8 pin DIP(DIP8),2 channel type(2 form A) Peak off−state voltage: 350V(min.) Trigger LED current: 3mA(max.) On−state current: 120mA(max.) On−state resistance: 35Ω(max.) Isolation voltage: 2500Vrms (min.) Isolation thickness: 0.4mm(min.) BSI approved: BS EN60065: 2002, certificate no.8275 BS EN60950-1: 2002, certificate no.8276 Option(D4) type TUV approved: DIN EN 60747-5-2, certificate no. 40011913 1 2 Unit in mm TOSHIBA Weight: 0.26g 1 Form A 11−5B2 4 3 Pin Configuration (top view) TLP227G 1 4 1 TLP227G-2 8 2 1: Anode 2: Cathode 3: Drain 1 4: Drain 2 3 2 7 1, 3: Anode 2, 4: Cathode 5: Drain 1 6 6: Drain 2 7: Drain 3 8: Drain 4 3 TOSHIBA Weight: 0.54g 2 Form A 8 11−10C4 5 4 5 1 4 1 2007-10-01 TLP227G,TLP227G−2 Internal Circuit (TLP227G) 1 4 2 3 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating(Ta ≥ 25°C) LED Peak forward current(100μs pulse, 100pps) Reverse voltage Junction temperature Off-state output terminal voltage TLP227G On-state current Detector TLP227G−2 TLP227G TLP227G−2 One channel Both channel (Note 1) Tj Tstg Topr Tsol (Note 2) BVS ΔION / °C One channel Both channel (Note 1) ION Symbol IF ΔIF / °C IFP VR Tj VOFF Rating 50 −0.5 1 5 125 350 120 120 100 −1.2 −1.2 −1.0 125 −55~125 −40~85 260 2500 °C °C °C °C Vrms mA / °C mA Unit mA mA / °C A V °C V On-state current derating(Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC,1 min., R.H.≤ 60%) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min. ― 5 ― −20 Typ. ― 7.5 ― ― Max. 280 25 100 65 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP227G,TLP227G−2 Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Detector Off−state current Capacitance Symbol VF IR CT IOFF COFF IF=10mA VR=5V V=0,f=1MHz VOFF=350V V=0,f=1MHz Test Condition Min. 1.0 ― ― ― ― Typ. 1.15 ― 30 — 40 Max. 1.3 10 ― 1 ― Unit V μA pF μA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Trigger LED current Symbol IFT Test Condition ION=120mA ION=120mA,IF=5mA On−state resistance RON ION=20~120mA, IF=5mA Min. ― ― ― Typ. 2 22 26 Max. 3 35 40 Ω Unit mA Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS=0,=1MHz VS=500V,R.H.≤ 60% AC,1 minute Isolation voltage BVS AC,1 second(in oil) DC,1 minute(in oil) Min. ― 5×10 10 Typ. 0.8 10 14 Max. ― ― ― ― ― Unit pF Ω Vrms Vdc 2500 ― ― ― 5000 5000 Switching Characteristics (Ta = 25°C) Characteristic Turn−on time Turn−off time Symbol tON tOFF RL=200Ω VDD=20V,IF=5mA Test Condition Min. ― ― Typ. 0.3 0.1 Max. 1 1 Unit ms Switching Time Test Circuit TLP227G IF 1 4 RL VDD VOUT IF 2 3 90% VOUT tON 10% tOFF 3 2007-10-01 TLP227G,TLP227G−2 IF – Ta 100 140 120 ION – Ta Allowable forward current IF (mA) (mA) On-state current ION 80 100 80 60 40 20 60 40 20 0 －20 0 20 40 60 80 100 120 0 －20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 5000 3000 Pulse width ≤ 100μs Ta = 25°C 100 50 30 1000 500 300 Ta = 25°C IF – V F Allowable pulse forward current IFP (mA) (mA) 10 Forward current IF 10－ 3 5 3 100 50 30 1 0.5 0.3 0.1 0.6 10 3 3 10－ 2 3 10 －1 3 10 0 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) ΔVF / ΔTa – IF 1000 －2.8 500 IFP – VFP Pulse forward current IFP (mA) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) 300 －2.4 －2.0 100 50 30 －1.6 －1.2 10 Pulse width ≤ 10μs 5 3 1 0.6 Repetitive frequency = 100Hz Ta = 25°C －0.8 －0.4 0.1 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2007-10-01 TLP227G,TLP227G−2 IFT – Ta 3.0 ION = Rated 200 ION – VON Ta = 25°C IF = 5mA Relative trigger LED current IFT / IFT (Ta = 25°C) (mA) On-state current ION 2.5 100 2.0 1.5 0 1.0 －100 0.5 0 －20 0 20 40 60 80 100 －200 －4 －2 0 2 4 Ambient temperature Ta (°C) On-state voltage VON (V) RON – Ta 60 ION = Rated IF = 5mA 1000 500 IOFF – Ta VOFF = 350V On-state resistance RON (Ω) (nA) Off-state current IOFF 50 300 100 50 30 40 30 20 10 5 3 1 －20 10 0 －20 0 20 40 60 80 100 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 5 2007-10-01 TLP227G,TLP227G−2 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01