TLP250(TP1,F)

TLP250 TOSHIBA Photocoupler IRED & Photo-IC TLP250 Industrial Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive Unit: mm The TOSHIBA TLP250 consists of an infrared emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. • Input threshold current: 5mA(max) • Supply current : 11mA(max) • Supply voltage : 10-35V • Output current : ±1.5A (max) • Switching time tpLH/tpHL): 0.5μs(max) • Isolation voltage: 2500Vrms(min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A TOSHIBA 11-10C4S Weight: 0.54 g (typ.) File No.E67349 • VDE-Approved: EN 60747-5- 5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(D4). Truth Table Input LED Tr1 Tr2 On On Off Off Off On Schmatic IF Pin Configuration (top view) I CC (Tr 1) 2+ 8 7 VF 3IO (Tr 2) A 0.1μF bypass capcitor must be connected between pin 8 and 5 (See Note 5). 6 5 1 8 2 7 3 6 4 5 VCC VO 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. VO 5 : GND 6 : V O (Output) 7 : VO 8 : VCC GND Start of commercial production 1990-11 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP250 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 70°C) LED Peak transient forward curent (Note 1) Rating Unit IF 20 mA ΔIF / ΔTa -0.36 mA / °C IFPT 1 A Reverse voltage VR 5 V Diode power dissipation PD 40 mW △PD /°C -0.72 mW / °C Tj 125 °C (Note 2) IOPH -1.5 A (Note 2) IOPL +1.5 A Diode power dissipation derating (Ta≥70°C) Junction temperature “H”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) “L”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) (Ta ≤ 70°C) Output voltage Detector Symbol (Ta ≤ 85°C) (Ta ≤ 70°C) Supply voltage (Ta ≤ 85°C) 35 VO 24 VCC 35 24 V V Output voltage derating (Ta ≥ 70°C) ΔVO / ΔTa -0.73 V / °C Supply voltage derating (Ta ≥ 70°C) ΔVCC / ΔTa -0.73 V / °C PC 800 mW ΔPC / °C -14.5 mW / °C Tj 125 °C f 25 kHz Power dissipation Power dissipation derating (Ta ≥ 70°C) Junction temperature Operating frequency (Note 3) Operating temperature range Topr -20 to 85 °C Storage temperature range Tstg -55 to 125 °C Lead soldering temperature (10 s) Isolation voltage (AC, 60 s., R.H.≤ 60 %) (Note 4) Tsol 260 °C BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 1 μs, 300 pps Note 2: Exporenential wavefom Note 3: Exporenential wavefom, IOPH ≤ -1.0 A( ≤ 2.5 μs), IOPL ≤ +1.0 A( ≤ 2.5 μs) Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Recommended Operating Conditions Symbol Min Typ. Max Unit Input current, on Characteristic IF(ON) 7 8 10 mA Input voltage, off VF(OFF) 0 ― 0.8 V VCC 15 ― 30 V IOPH/IOPL ― ― ±0.5 A Topr -20 25 85 °C Supply voltage Peak output current Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note : A ceramic capacitor(0.1 μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead length between capacitor and coupler should not exceed 1 cm. Note : Input signal rise time(fall time) 0 V ― 1.2 5 mA Threshold input voltage “Output H→L” VFHL ― VCC1 = +15 V, VEE1 = -15 V RL = 200 Ω, VO < 0 V 0.8 ― ― V VCC ― － 10 ― 35 V Capacitance (input-output) CS ― VS = 0 V, f = 1 MHz Ta = 25 °C ― 1.0 2.0 pF Resistance(input-output) RS ― VS = 500 V , Ta = 25 °C R.H.≤ 60 % 1×1012 1014 ― Ω Supply voltage * All typical values are at Ta = 25°C Note 1: Duration of IO time ≤ 50μs © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-17 TLP250 Switching Characteristics (Ta = -20 to 70°C, unless otherwise specified) Characteristic Propagation delay time Symbol L→H tpLH H→L tpHL Common mode transient immunity at high level output CMH Common mode transient immunity at low level output CML Test Circuit Test Condition Min Typ. Max 5 IF = 8 mA VCC1 = +15 V, VEE1 = -15 V RL = 200 Ω ― 0.15 0.5 ― 0.15 0.5 VCM = 600 V, IF = 8 mA VCC = 30 V, Ta = 25 °C -5000 ― ― V / μs VCM = 600 V, IF = 0 mA VCC = 30 V, Ta = 25 °C 5000 ― ― V / μs Unit μs 6 Note: All typical values are at Ta = 25°C Test Circuit 1 : IOPH 1 Test Circuit 2 : IOPL 8 1 8 VCC 0.1μF 0.1μF V8-6 IF IOPH 4 8 1 VCC1 8 VCC1 0.1μF VF RL 4 V6-5 Test Circuit 4 : VOL 0.1μF IF IOPL 4 Test Circuit 3 : VOH 1 VCC A A RL V VOH V 4 VEE1 VEE1 © 2019 Toshiba Electronic Devices & Storage Corporation VOL 4 2019-06-17 TLP250 Test Circuit 5: tpLH, tpHL, tr tf 8 IF IF 0.1μF tr tf VCC1 VOH VO RL VO GND VOL tpLH 100Ω 80% 80% tpHL VEE1 Test Circuit 6: CMH, CML 8 1 SW IF A 0.1μF VCC B VO 4 VCM + VCM - 600V 90% 10% tf tr CML = 480 (V) tr (μs) SW: A(IF=8mA) CMH VO 3V 26V SW: B(IF=0) CMH = 480 (V) tf (μs) CHL CML(CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-17 TLP250 I F – VF (mA) 50 30 ΔVF / ΔTa – IF -2.6 Ta = 25 °C Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) 100 10 Forward current IF 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1.0 1.4 1.2 1.8 1.6 Forward voltage VF -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 0.1 2.0 0.3 0.5 (V) 1 Forward current IF – Ta 3 5 IF (mA) 10 30 VCC – Ta 40 30 Allowable supply voltage VCC Allowable forward current IF (mA) (V) 40 20 10 0 0 20 40 60 80 30 20 10 0 100 Ambient temperature Ta (°C) 0 20 40 60 80 100 Ambient temperature Ta (°C) IOPH, IOPL – Ta Allowable peak output current IOPH, IOPL (A) PW ≤ 2.5 μs, f ≤ 15 KHz 2 1 0 0 20 40 60 80 100 Ambient Temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-17 TLP250 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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