100BGQ030_11

VS-100BGQ030 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES • • • • • 150 °C max. operating junction temperature High frequency operation Ultralow forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term reliability Cathode Anode PowerTab® • Screw mounting only • Designed and qualified according to JEDEC-JESD47 • PowerTab® package PowerTab® 100 A 30 V 0.56 V 460 mA at 125 °C 150 °C Single die 9 mJ PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The VS-100BGQ030 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 100 Apk (typical) TJ Range CHARACTERISTICS Rectangular waveform TC VALUES 100 106 30 4500 0.49 150 - 55 to 150 UNITS A °C V A V °C °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM 100BGQ030 30 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TEST CONDITIONS 50 % duty cycle at TC = 106 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 100 4500 A 850 36 8 mJ A UNITS A TJ = 25 °C, IAS = 8 A, L = 1.12 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Revision: 17-Jun-11 Document Number: 94579 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ030 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 50 A Forward voltage drop VFM (1) 100 A 50 A 100 A TJ = 125 °C, VR = 15 V Reverse leakage current IRM (1) TJ = 150 °C, VR = 30 V TJ = 25 °C TJ = 125 °C Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % CT LS dV/dt VR = Rated VR TEST CONDITIONS TJ = 25 °C TJ = 150 °C TYP. 0.47 0.56 0.36 0.49 80 800 0.6 260 3800 3.5 10 000 MAX. 0.5 0.63 0.4 0.56 160 1100 2.4 460 pF nH V/μs mA V UNITS VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Measured from tab to mounting plane Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style PowerTab® SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 150 0.50 °C/W 0.30 5 0.18 1.2 (10) 2.4 (20) g oz. N·m (lbf · in) UNITS °C Mounting torque Marking device 100BGQ030 Revision: 17-Jun-11 Document Number: 94579 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ030 www.vishay.com Vishay Semiconductors 1000 150°C 1000 Reverse Current - IR (mA) 100 125°C 100°C 10 75°C 50°C 25°C 1 Instantaneous Forward Current - IF (A) 100 0.1 Tj = 150°C 0.01 0 5 10 15 20 25 30 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 10 Tj = 125°C Junction Capacitance - CT (pF) TJ = 25 °C Tj = 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1000 0 5 10 15 20 25 30 35 Reverse Voltage - VR (V) Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 Thermal Impedance ZthJC (°C/W) D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 17-Jun-11 Document Number: 94579 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ030 www.vishay.com Vishay Semiconductors 100 160 Allowable Case Temperature (°C) 140 120 100 80 60 40 0 20 40 60 80 100 120 140 160 Average Forward Current - IF(AV)(A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 10 000 Average Power Loss - (Watts) 80 DC 180° 120° 90° 60° 30° 60 RMS Limit DC 40 Square wave (D=0.50) 80% rated Vr applied see note (1) 20 0 0 30 60 90 120 150 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics Non Repetitive Surge Current - IFSM (A) 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge 100 10 100 1000 10 000 Square Wave Pulse Duration - tp (μs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 17-Jun-11 Document Number: 94579 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ030 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 - 100 BGQ 030 2 3 4 Vishay Semiconductors product Current rating Essential part number Voltage code = VRRM LINKS TO RELATED DOCUMENTS Dimensions Part marking information Application note www.vishay.com/doc?95240 www.vishay.com/doc?95370 www.vishay.com/doc?95179 Revision: 17-Jun-11 Document Number: 94579 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® DIMENSIONS in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 8.45 (0.33) 8.20 (0.32) 4.20 (0.16) 4.00 (0.15) Lead 1 12.40 (0.48) 12.10 (0.47) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.45 REF. (0.21 REF.) 5.20 (0.20) 4.95 (0.19) 3.09 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) 4.95 (0.19) 4.75 (0.18) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 39.8 (1.56) 39.6 (1.55) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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