CQY37N_11

CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage 94 8638-2 • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matches with detector BPW17N • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION CQY37N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package with lens. APPLICATIONS • Radiation source in near infrared range PRODUCT SUMMARY COMPONENT CQY37N Ie (mW/sr) 5  (deg) ± 12 P (nm) 950 tr (ns) 800 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE CQY37N Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t3s Leads not soldered tp  100 μs TEST CONDITION SYMBOL VR IF IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 2 160 100 - 25 to + 85 - 25 to + 100 245 450 UNIT V mA A mW °C °C °C °C K/W Document Number: 81002 Rev. 1.7, 08-Mar-11 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 180 120 100 80 60 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 450 K/W IF - Forward Current (mA) RthJA = 450 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21319 Tamb - Ambient Temperature (°C) 21320 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Breakdown voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Rise time Virtual source diameter IF = 50 mA IF = 50 mA IF = 100 mA IF = 1.5 A, tp/T = 0.01, tp 10 μs TEST CONDITION IF = 50 mA, tp  20 ms IF = 100 mA IR = 100 μA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp  20 ms IF = 50 mA, tp  20 ms IF = 50 mA SYMBOL VF TKVF V(BR) Cj Ie e TKe  p  tr tr d 2.2 4.8 5 50 5 10 - 0.8 ± 12 950 50 800 400 1.2 11 17.8 MIN. TYP. 1.3 - 1.3 MAX. 1.6 UNIT V mV/K μA pF mW/sr mW %/K deg nm nm ns ns mm BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 1.2 VF rel - Relative Forward Voltage (V) I F - Forward Current (mA) 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 0 1 2 3 4 94 7990 0 20 40 60 80 100 V F - Forward Voltage (V) Tamb - Ambient Temperature (°C) Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Forward Voltage vs. Ambient Temperature www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81002 Rev. 1.7, 08-Mar-11 CQY37N Infrared Emitting Diode, 950 nm, GaAs Vishay Semiconductors 100 I e – Radiant Intensity (mW/sr) Φe rel - Relative Radiant Power 1.25 1.0 10 0.75 0.5 1 0.25 IF = 100 mA 0 900 950 λ - Wavelength (nm) 1000 0.1 100 94 7920 101 102 103 I F – Forward Current (mA) 104 94 7994 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength 0° 10° 20° 30° 100 I e rel – Relative Radiant Intensity Φ e - Radiant Power (mW) 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 10 1 0.1 1 13718 10 100 1000 94 7922 0.6 0.4 0.2 0 0.2 0.4 0.6 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 1.2 Ie rel; Φe rel IF = 20 mA 0.8 0.4 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81002 Rev. 1.7, 08-Mar-11 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs PACKAGE DIMENSIONS in millimeters Drawing-No.: 6.544-5052.01-4 Issue: 1; 12.10.95 95 11262 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81002 Rev. 1.7, 08-Mar-11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1