CQY80NG

CQY80N(G) Vishay Telefunken Optocoupler with Phototransistor Output Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. B 6 C 5 E 4 VDE Standards These couplers perform safety functions according to the following equipment standards: 1 2 A (+) C (–) 3 n.c. 95 10805 D VDE 0884 Optocoupler for electrical safety requirements D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking CQY80N > 50% CQY80NG1) > 50% 1) G = Leadform 10.16 mm; G is not market on the body Remarks 152 Rev. A3, 11–Jan–99 CQY80N(G) Vishay Telefunken Features Approvals: D Rated recurring peak voltage (repetitive) D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm General features: VIORM = 600 VRMS D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D VDE 0884, Certificate number 94778 VDE 0884 related features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664) D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR D CTR > 50% D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 60 1.5 100 125 Unit V mA tp ≤ 10 ms Tamb ≤ 25°C A mW °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 32 7 50 100 150 125 Unit V V mA mA mW °C tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Rev. A3, 11–Jan–99 Test Conditions t = 1 min Tamb ≤ 25°C 2 mm from case, t ≤ 10 s Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mW °C °C °C 153 CQY80N(G) Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. Unit V V nA 10 200 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 110 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 10 mA Type CQY80N, CQY80NG Symbol CTR Min. 0.5 Typ. 0.9 Max. Unit 154 Rev. A3, 11–Jan–99 CQY80N(G) Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV °C Insulation Rated Parameters (according to VDE 0884) Parameter Partial discharge test voltage – Routine test Partial discharge test g voltage – Lot test (sample test) Insulation resistance Test Conditions 100%, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C (construction test only) 275 Ptot – Total Power Dissipation ( mW ) 250 225 200 175 150 125 100 75 50 25 0 0 95 10923 Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 6 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W VIOTM V t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd VIOWM VIORM Psi (mW) Isi (mA) 0 t3 ttest t4 t1 tTr = 60 s t2 tstres t 25 50 75 100 125 150 175 13930 Tamb – Ambient Temperature ( °C ) Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A3, 11–Jan–99 155 CQY80N(G) Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 5 mA, RL = 100 W (see figure 3) g ) Symbol td tr tf ts ton toff ton toff Typ. 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5 Unit ms ms ms ms ms ms ms ms 96 11698 VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 4) g ) 0 IF IF +5V IC = 5 mA ; Adjusted through input amplitude IF 0 tp IC Oscilloscope RL CL RG = 50 W tp = 0.01 T tp = 50 ms t Channel I 50 14943 W 100 W Channel II w 1 MW v 20 pF 100% 90% Figure 3. Test circuit, non-saturated operation 10% 0 tr I 0 F I +5V F I R = 50 W G t p = 0.01 T C tp tion td tr ton (= td + tr) Channel I Channel II 50W 14944 t ts toff tf td ton pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time t = 50 ms p Figure 5. Switching times 1 kW Oscilloscope R 1 MW L C 20 pF L w v Figure 4. Test circuit, saturated operation 156 Rev. A3, 11–Jan–99 CQY80N(G) Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot – Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 10000 ICEO– Collector Dark Current, with open Base ( nA ) VCE=20V IF=0 1000 100 10 1 40 80 120 95 11026 0 25 50 75 100 Figure 6. Total Power Dissipation vs. Ambient Temperature 1000.0 I CB – Collector Base Current ( mA ) Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 9. Collector Dark Current vs. Ambient Temperature 1 VS=5V 0.1 I F – Forward Current ( mA ) 100.0 10.0 0.01 1.0 0.1 0 96 11862 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 95 11052 1 10 IF – Forward Current ( mA ) 100 Figure 7. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Figure 10. Collector Base Current vs. Forward Current 100 IC – Collector Current ( mA ) VCE=5V IF=10mA VCE=5V 10 1 0.1 0.01 0.1 95 11053 1 10 100 96 11920 Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Tamb – Ambient Temperature ( °C ) IF – Forward Current ( mA ) Figure 11. Collector Current vs. Forward Current Rev. A3, 11–Jan–99 157 CQY80N(G) Vishay Telefunken 100 CTR – Current Transfer Ratio ( % ) IF=50mA IC – Collector Current ( mA ) 20mA 10mA 10 5mA 1000 VCE=5V 100 2mA 1 1mA 10 0.1 0.1 95 11054 1 1 10 100 95 11057 0.1 1 10 100 VCE – Collector Emitter Voltage ( V ) IF – Forward Current ( mA ) Figure 12. Collector Current vs. Collector Emitter Voltage V CEsat – Collector Emitter Saturation Voltage ( V ) 1.0 Figure 15. Current Transfer Ratio vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 50 toff 40 0.8 0.6 30 ton Saturated Operation VS=5V RL=1kW 0 5 10 15 20 0.4 0.2 CTR=50% 20 10 0 20% 0 1 10% 10 IC – Collector Current ( mA ) 100 95 11055 95 11017 IF – Forward Current ( mA ) Figure 13. Collector Emitter Saturation Voltage vs. Collector Current 1000 VCE=5V hFE – DC Current Gain 800 Figure 16. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 20 ton 15 Non Saturated Operation VS=5V RL=100W 600 10 toff 400 200 0 0.01 5 0 0.1 1 10 100 95 11016 0 2 4 6 8 10 95 11056 IC – Collector Current ( mA ) IC – Collector Current ( mA ) Figure 14. DC Current Gain vs. Collector Current Figure 17. Turn on / off Time vs. Collector Current 158 Rev. A3, 11–Jan–99 CQY80N(G) Vishay Telefunken Type Date Code (YM) XXXXXX 918 A TK 63 0884 V DE 15090 Production Location Safety Logo Coupling System Indicator Company Logo Figure 18. Marking example Dimensions of CNY80NG in mm weight: ca. 0.50 g creepage distance: air path: 8 mm y y 8 mm after mounting on PC board 14771 Rev. A3, 11–Jan–99 159 CQY80N(G) Vishay Telefunken Dimensions of CNY80N in mm weight: 0.50 g creepage distance: air path: 6 mm y y 6 mm after mounting on PC board 14770 160 Rev. A3, 11–Jan–99