SI6467DQ

Si6467DQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.014 @ VGS = - 4.5 V 0.019 @ VGS = - 2.5 V 0.027 @ VGS = - 1.8 V ID (A) "8.0 "7.0 "5.8 S* TSSOP-8 D S S G 1 2 3 4 Top View D D 8D 7S 6S 5D G *Source Pins 2, 3, 6 and 7 must be tied common Si6467DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage a, Continuous Drain Current Continuous Drain Current (TJ = 150_C)a, b Symbol VDS VGS TA = 25_C TA = 70_C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg Limit - 12 "8 "8.0 "6.5 "30 - 1.5 1.5 1.0 - 55 to 150 Unit V A Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70829 S-59526—Rev. A, 19 Oct-98 www.vishay.com t v 10 sec Steady State RthJA 90 Symbol Typical Maximum 83 Unit _C/W 2-1 Si6467DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 70_C VDS w - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 8.0 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 7.0 A VGS = - 1.8 V, ID = - 5.8 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 8.0 A IS = - 1.5 A, VGS = 0 V - 20 0.0105 0.014 0.020 34 0.65 - 1.1 0.014 0.019 0.027 S V W - 0.45 "100 -1 - 25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.5 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 8.0 A 49 9 6.5 40 50 220 105 70 70 100 400 200 120 ns 80 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 70829 S-59526—Rev. A, 19 Oct-98 Si6467DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 1.5 V 12 18 12 TC = 125_C 6 25_C 0 0.0 - 55_C 1.0 1.5 2.0 6 1V 0 0 2 4 6 8 10 12 0.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 10000 Capacitance r DS(on) - On-Resistance ( W ) 0.04 C - Capacitance (pF) 8000 Ciss 0.03 VGS = 1.8 V 0.02 VGS = 2.5 V 0.01 VGS = 4.5 V 6000 4000 Coss 2000 Crss 0.00 0 6 12 18 24 30 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 4.5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 8.0 A 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 8.0 A 1.2 VGS = 1.8 V ID = 5.8 A 1.0 2.7 1.8 r DS(on) - On-Resistance (W ) (Normalized) 3.6 0.8 0.9 0.0 0 10 20 30 40 50 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70829 S-59526—Rev. A, 19 Oct-98 www.vishay.com 2-3 Si6467DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) - On-Resistance ( W ) TJ = 150_C I S - Source Current (A) 0.08 0.06 0.04 ID = 8.0 A 0.02 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.5 0.4 0.3 40 0.2 0.1 0.0 - 0.1 - 0.2 - 50 10 Power (W) ID = 250 mA 60 Single Pulse Power 50 V GS(th) Variance (V) 30 20 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70829 S-59526—Rev. A, 19 Oct-98