Si6544DQ
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 30
rDS(on) (W)
0.035 @ VGS = 10 V 0.050 @ VGS = 4.5 V
ID (A)
"4.0 "3.4 "3.5 "2.5
P-Channel
–30
0.045 @ VGS = –10 V 0.090 @ VGS = –4.5 V
D1
S2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2
Si6544DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
30 "20 "4.0 "3.2 "20 1.25 1.0
P-Channel
–30 "20 "3.5 "2.8 "20 –1.25
Unit
V
A
W 0.64 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70668 S-56944—Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
N- or P-Channel
125
Unit
_C/W
2-1
Si6544DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z Gate Voltage Drain Current l i IDSS VDS = –30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = –30 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta Drain Current ID(on) VDS w 5 V, VGS = 10 V VDS w –5 V, VGS = –10 V VGS = 10 V, ID = 4.0 A D i -Source On-State Resistance S i Drain S Drain-Source On-State Resistancea rDS(on) DS(on) VGS = –10 V, ID = –3.5 A VGS = 4.5 V, ID = 3.4 A VGS = –4.5 V, ID = –2.5 A Forward Transconductancea Transconductance gfs VDS = 15 V, ID = 4.0 A VDS = –15 V, ID = – 3.5 A IS = 1.25 A, VGS = 0 V IS = –1.25 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 A –20 0.027 0.035 0.038 0.062 13 S 7.2 0.73 –0.77 1.2 V –1.2 0.035 0.045 0.050 0.090 W 1.0 V –1.0 "100 "100 1 –1 5 –5 mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage Leakage
IGSS
Diode Forward Voltagea Forward Voltage
VSD
Dynamicb
N-Ch Total Gate Charge Total Gate Charge Qg N-Channel N Ch l Channel VDS = 15 V, VGS = 10 V, ID = 4.0 A P-Channel VDS = –15 V VGS = –10 V ID = –3.5 A V, V, 35 Gate-Drain Charge Charge Qgd P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time Delay Time td(on) N-Channel N Ch l V, VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –15 V RL = 15 W V, 15 10 ID ^ –1 A, VGEN = –10 V, RG = 6 W A, P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Time Source-Drain Reverse R R Recovery Time Ti tf IF = 1.25 A, di/dt = 100 A/ms IF = –1.25 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 17.5 17 4.0 C nC 4.4 2.5 3.1 12 13 9 10 25 33 20 10 25 30 20 20 20 20 50 ns 60 40 20 60 60 30 30
Gate-Source Charge Charge
Qgs
Rise Time Time
tr
Turn-Off Delay Time Delay Time
td(off)
trr
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
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2-2
Document Number: 70668 S-56944—Rev. C, 23-Nov-98
Si6544DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 5 V 4V 16 I D – Drain Current (A) I D – Drain Current (A) 16 20
N-CHANNEL
Transfer Characteristics
12
12
8
8 TC = 125_C 4 25_C –55_C 0
4 3V 0 0 2 4 6 8 10
0
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.06 1500
Capacitance
Ciss 1200
0.05 r DS(on)– On-Resistance ( W ) VGS = 4.5 V C – Capacitance (pF)
0.04
900
0.03
VGS = 10 V
600 Coss 300 Crss 0
0.02
0.01
0 0 4 8 12 16 20
0
6
12
18
24
30
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
10 VDS = 15 V ID = 4.0 A 1.8 1.6 r DS(on)– On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 –50
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
8
VGS = 10 V ID = 4.0 A
6
4
2
0 0 4 8 12 16 20 Qg – Total Gate Charge (nC)
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Document Number: 70668 S-56944—Rev. C, 23-Nov-98
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2-3
Si6544DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20 0.12
N-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
I S – Source Current (A)
10
r DS(on)– On-Resistance ( W )
0.09
ID = 4.0 A
TJ = 150_C
0.06
TJ = 25_C
0.03
0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V)
0 1 3 5 7 9 VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.6 ID = 250 mA 0.3 V GS(th) Variance (V) 32 40
Single Pulse Power
Power (W)
0.0
24
–0.3
16
–0.6
8
–0.9 –50
–25
0
25
50
75
100
125
150
0 0.01 0.1 1 Time (sec) 10 30
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1
1
10
30
Square Wave Pulse Duration (sec)
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2-4
Document Number: 70668 S-56944—Rev. C, 23-Nov-98
Si6544DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 to 5 V 20
P-CHANNEL
Transfer Characteristics
16 I D – Drain Current (A)
16 4V I D – Drain Current (A)
12
12
8
8 TC = 125_C 4 25_C –55_C
4
3V
0 0 2 4 6 8 10
0 0 1 2 3 4 5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20 1500
Capacitance
Ciss r DS(on)– On-Resistance ( W ) 0.16 C – Capacitance (pF) 1200
0.12
900
0.08
VGS = 4.5 V VGS = 10 V
600 Coss 300 Crss
0.04
0 0 4 8 12 16 20
0 0 6 12 18 24 30
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
10 VDS = 15 V ID = 4.0 A V GS – Gate-to-Source Voltage (V)
Gate Charge
1.8 1.6 r DS(on)– On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 –50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 4.0 A
8
6
4
2
0 0 4 8 12 16 20
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C)
Document Number: 70668 S-56944—Rev. C, 23-Nov-98
www.vishay.com S FaxBack 408-970-5600
2-5
Si6544DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20 0.20
P-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C
r DS(on)– On-Resistance ( W )
10 I S – Source Current (A)
0.16
0.12
TJ = 25_C
0.08 ID = 4.0 A 0.04
1 0.00 0.25 0.50 0.75 1.00 1.25 1.50
0 0 2 4 6 8 10
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
0.8 0.6
Threshold Voltage
40
Single Pulse Power
30 0.4 V GS(th) Variance (V) 0.2 –0.0 –0.2 –0.4 –0.6 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 ID = 250 mA Power (W)
20
10
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1 0.1 0.05
PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM – TA = PDMZthJA(t)
0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
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2-6
Document Number: 70668 S-56944—Rev. C, 23-Nov-98