SI6544BDQ_08

Si6544BDQ Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 RDS(on) (Ω) 0.032 at VGS = 10 V 0.046 at VGS = 4.5 V 0.043 at VGS = - 10 V 0.073 at VGS = - 4.5 V ID (A) 4.3 3.7 - 3.8 - 2.8 FEATURES • Halogen-free • TrenchFET® Power MOSFETS RoHS COMPLIANT D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6544BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D2 7 S2 6 S2 5 G2 S1 N-Channel MOSFET G1 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.0 1.14 0.73 4.3 3.5 20 0.7 0.83 0.53 - 1.0 1.14 0.73 - 55 to 150 3.7 3.0 N-Channel 10 s Steady State 30 ± 20 - 3.8 - 3.0 - 20 - 0.7 0.83 0.53 W °C - 3.8 - 2.6 A 10 s P-Channel Steady State - 30 Unit V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. t ≤ 10 s Steady State Symbol RthJA RthJF Typical 88 120 65 Maximum 110 150 80 °C/W Unit Document Number: 72244 S-81056-Rev. B, 12-May-08 www.vishay.com 1 Si6544BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS = - 30 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V VDS ≥ - 5 V, VGS = - 10 V VGS = 10 V, ID = 4.3 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 3.8 A VGS = 4.5 V, ID = 3.7 A VGS = - 4.5 V, ID = - 2.8 A Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr N-Channel VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω P-Channel VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω IF = 1.25 A, dI/dt = 100 A/µs IF = - 1.25 A, dI/dt = 100 A/µs P-Channel VDS = - 15 V, VGS = - 10 V, ID = - 3.8 A N-Ch N-Channel VDS = 15 V, VGS = 10 V, ID = 4.3 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 9.5 16 1.8 2.3 1.55 4.5 0.45 8.8 13 14 14 14 30 40 10 30 30 30 25 25 25 25 50 65 20 50 60 ns Ω 15 25 nC gfs VSD VDS = 15 V, ID = 4.3 A VDS = - 15 V, ID = - 3.8 A IS = 1.25 A, VGS = 0 V IS = - 1.25 A, VGS = 0 V N-Ch P-Ch n-ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch 20 - 20 0.025 0.034 0.037 0.058 11 11 0.77 - 0.77 1.1 - 1.1 0.032 0.043 0.046 0.073 S V Ω 1.0 - 1.0 3.0 - 3.0 ± 100 ± 100 1 -1 5 -5 A µA V nA Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72244 S-81056-Rev. B, 12-May-08 Si6544BDQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 4V 16 25 °C, unless otherwise noted 20 12 12 8 8 TC = 125 °C 4 25 °C - 55 °C 4 3V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.080 1100 Transfer Characteristics 0.064 C - Capacitance (pF) 880 Ciss 660 0.048 VGS = 4.5 V RDS(on) 0.032 VGS = 10 V 440 0.016 220 Crss Coss 0.000 0 4 8 12 16 20 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 4.3 A 8 - On-Resistance 1.4 1.6 VGS = 10 V ID = 4.3 A Capacitance (Normalized) 6 1.2 R DS(on) 4 1.0 2 0.8 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72244 S-81056-Rev. B, 12-May-08 www.vishay.com 3 Si6544BDQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 R DS(on) - On-Resistance (Ω) 0.12 I S - Source Current (A) 0.15 0.09 ID = 4.3 A TJ = 150 °C 1 TJ = 25 °C 0.06 0.03 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 200 On-Resistance vs. Gate-to-Source Voltage 0.2 160 V GS(th) Variance (V) ID = 250 µA 0.0 Power (W) 120 - 0.2 80 - 0.4 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 Time (s) 1 10 TJ - Temperature (°C) Threshold Voltage 100 Limited by R DS(on) * Single Pulse Power, Junction-to-Ambient 10 ID - Drain Current (A) 1 ms 1 10 ms 0.1 TC = 25 °C Single Pulse 100 ms 1s 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 72244 S-81056-Rev. B, 12-May-08 Si6544BDQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 120 °C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72244 S-81056-Rev. B, 12-May-08 www.vishay.com 5 Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 4V 12 16 20 12 8 8 TC = 125 °C 25 °C 0 0.0 - 55 °C 4 3V 0 0 1 2 3 4 5 4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.15 1100 Transfer Characteristics C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.12 880 Ciss 660 0.09 VGS = 4.5 V 0.06 VGS = 10 V 0.03 440 Coss Crss 220 0.00 0 4 8 12 16 20 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 3.8 A 8 - On-Resistance 1.4 1.6 VGS = 10 V ID = 3.8 A Capacitance (Normalized) 6 1.2 R DS(on) 4 1.0 2 0.8 0 0.0 3.2 6.4 9.6 12.8 16.0 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 6 Document Number: 72244 S-81056-Rev. B, 12-May-08 Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 0.16 I S - Source Current (A) - On-Resistance (Ω) 0.20 0.12 ID = 3.8 A TJ = 150 °C 1 TJ = 25 °C 0.08 DS(on) 0.04 R 0.1 0.0 0.3 0.6 0.9 1.2 1.5 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.6 200 On-Resistance vs. Gate-to-Source Voltage 0.4 V GS(th) Variance (V) ID = 250 µA 0.2 160 Power (W) 120 0.0 80 - 0.2 40 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 Time (s) 1 10 TJ - Temperature (°C) Threshold Voltage 100 Limited by R DS(on) * Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0.1 TC = 25 °C Single Pulse Safe Operating Area, Junction-to-Case Document Number: 72244 S-81056-Rev. B, 12-May-08 www.vishay.com 7 Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 120 °C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72244. www.vishay.com 8 Document Number: 72244 S-81056-Rev. B, 12-May-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1