SI6544BDQ

Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel Channel 30 FEATURES rDS(on) (W) 0.032 @ VGS = 10 V 0.046 @ VGS = 4.5 V 0.043 @ VGS = - 10 V ID (A) 4.3 3.7 - 3.8 - 2.8 D TrenchFETr Power MOSFETS P-Channel P Channel - 30 0.073 @ VGS = - 4.5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6544BDQ-T1 S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G2 G1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C P-Channel 10 sec Steady State - 30 "20 V - 3.8 - 3.0 - 20 - 3.8 - 2.6 A - 0.7 0.83 0.53 W _C Symbol VDS VGS 10 sec Steady State 30 Unit 4.3 ID IDM IS PD TJ, Tstg 1..0 1.14 0.73 3.5 20 3.7 3.0 0.7 0.83 0.53 - 55 to 150 - 1..0 1.14 0.73 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72244 S-31251—Rev. A, 16-Jun-03 www.vishay.com Steady State RthJA RthJF Symbol Typical 88 120 65 Maximum 110 150 80 Unit _C/W 1 Si6544BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C VDS = - 24 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currenta VDS w 5 V, VGS = 10 V ID( ) D(on) VDS w - 5 V, VGS = - 10 V VGS = 10 V, ID = 4.3 A Drain-Source On-State Drain Source On State Resistancea VGS = - 10 V, ID = - 3.8 A rDS( ) DS(on) VGS = 4.5 V, ID = 3.7 A VGS = - 4.5 V, ID = - 2.8 A Forward Transconductancea VDS = 15 V, ID = 4.3 A gf fs VDS = - 15 V, ID = - 3.8 A IS = 1.25 A, VGS = 0 V VSD IS = - 1.25 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 - 20 0.025 0.034 0.037 0.058 11 11 0.77 - 0.77 1.1 - 1.1 V S 0.032 0.043 0.046 0.073 W A 1.0 - 1.0 3.0 V - 3.0 "100 "100 1 -1 5 -5 mA nA Symbol Test Condition Min Typ Max Unit Gate-Body Gate Body Leakage IGSS Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge otal Gate Charge Qg N-Channel N-Channel VDS = 15 V, VGS = 10 V, ID = 4.3 A Gate-Source Gate Source Charge Qgs P-Channel VDS = - 15 V VGS = - 10 V, ID = - 3.8 A V, 10 V 38 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Gate Resistance Rg P-Ch N-Ch Turn-On Turn On Delay Time td( ) d(on) N-Channel VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W P Channel P-Channel VDD = - 15 V, RL = 15 W 1V ID ^ - 1 A, VGEN = - 10 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 1.25 A, di/dt = 100 A/ms trr IF = - 1.25 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 9.5 16 1.8 nC nC 2.3 1.55 4.5 0.45 8.8 13 14 14 14 30 40 10 30 30 30 25 25 25 25 50 65 20 50 60 ns W 15 25 Gate-Drain Gate Drain Charge Qgd d Rise Time tr Turn-Off Turn Off Delay Time td( ff) d(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com Document Number: 72244 S-31251—Rev. A, 16-Jun-03 2 Si6544BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 4V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 Vishay Siliconix N−CHANNEL Transfer Characteristics 12 12 8 8 TC = 125_C 4 25_C - 55_C 4 3V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.080 r DS(on) - On-Resistance ( W ) 1100 Capacitance 0.064 C - Capacitance (pF) 880 Ciss 660 0.048 VGS = 4.5 V 0.032 VGS = 10 V 440 0.016 220 Crss Coss 0.000 0 4 8 12 16 20 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 4.3 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.3 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 4 6 8 10 1.2 4 1.0 2 0.8 0 0 2 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72244 S-31251—Rev. A, 16-Jun-03 www.vishay.com 3 Si6544BDQ Vishay Siliconix New Product N−CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.15 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) 0.12 I S - Source Current (A) 0.09 ID = 4.3 A TJ = 150_C 1 TJ = 25_C 0.06 0.03 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 200 Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 Power (W) 160 120 - 0.2 80 - 0.4 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 1 10 ms 0.1 TC = 25_C Single Pulse 100 ms 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72244 S-31251—Rev. A, 16-Jun-03 Si6544BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N−CHANNEL 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72244 S-31251—Rev. A, 16-Jun-03 www.vishay.com 5 Si6544BDQ Vishay Siliconix New Product P−CHANNEL Transfer Characteristics 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) 4V 12 I D - Drain Current (A) 16 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 12 8 8 TC = 125_C 25_C 0 0.0 - 55_C 2.5 3.0 3.5 4.0 4.5 4 3V 0 0 1 2 3 4 5 4 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( W ) 1100 Capacitance C - Capacitance (pF) 0.12 880 Ciss 660 0.09 VGS = 4.5 V 0.06 VGS = 10 V 0.03 440 Coss Crss 220 0.00 0 4 8 12 16 20 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 3.8 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.8 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 6.4 9.6 12.8 16.0 1.2 4 1.0 2 0.8 0 0.0 3.2 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com 6 Document Number: 72244 S-31251—Rev. A, 16-Jun-03 Si6544BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) 0.16 I S - Source Current (A) 0.20 Vishay Siliconix P−CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.12 ID = 3.8 A TJ = 150_C 1 TJ = 25_C 0.08 0.04 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 200 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 160 Power (W) 120 0.0 80 - 0.2 40 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 10 s dc 0.01 0.1 1 10 100 0.1 TC = 25_C Single Pulse VDS - Drain-to-Source Voltage (V) Document Number: 72244 S-31251—Rev. A, 16-Jun-03 www.vishay.com 7 Si6544BDQ Vishay Siliconix New Product P−CHANNEL TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 72244 S-31251—Rev. A, 16-Jun-03