SI6544BDQ-T1-GE3

Si6544BDQ Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.032 at VGS = 10 V 4.3 0.046 at VGS = 4.5 V 3.7 0.043 at VGS = - 10 V - 3.8 0.073 at VGS = - 4.5 V - 2.8 • Halogen-free • TrenchFET® Power MOSFETS RoHS COMPLIANT D1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G2 G1 8 D2 7 S2 6 S2 5 G2 S1 D2 N-Channel MOSFET P-Channel MOSFET Top View Ordering Information: Si6544BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD P-Channel Steady State 10 s 30 Steady State - 30 4.3 3.5 3.7 - 3.8 3.0 - 3.0 20 - 3.8 - 2.6 - 20 1.0 0.7 - 1.0 - 0.7 1.14 0.83 1.14 0.83 0.73 0.53 0.73 0.53 TJ, Tstg Unit V ± 20 IDM Pulsed Drain Current Maximum Power Dissipationa ID N-Channel 10 s - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State RthJA RthJF Typical Maximum 88 110 120 150 65 80 Unit °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 72244 S-81056-Rev. B, 12-May-08 www.vishay.com 1 Si6544BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) N-Ch 1.0 3.0 P-Ch - 1.0 - 3.0 VDS = 0 V, VGS = ± 20 V IGSS IDSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA n-ch ± 100 N-Ch ± 100 VDS = 30 V, VGS = 0 V P-Ch 1 VDS = - 30 V, VGS = 0 V N-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C P-Ch 5 VDS = - 30 V, VGS = 0 V, TJ = 55 °C N-Ch VDS ≥ 5 V, VGS = 10 V P-Ch 20 VDS ≥ - 5 V, VGS = - 10 V N-Ch - 20 ID(on) RDS(on) gfs VSD V nA µA -5 A VGS = 10 V, ID = 4.3 A P-Ch 0.025 0.032 VGS = - 10 V, ID = - 3.8 A N-Ch 0.034 0.043 VGS = 4.5 V, ID = 3.7 A P-Ch 0.037 0.046 VGS = - 4.5 V, ID = - 2.8 A N-Ch 0.058 0.073 VDS = 15 V, ID = 4.3 A P-Ch 11 VDS = - 15 V, ID = - 3.8 A N-Ch 11 Ω S IS = 1.25 A, VGS = 0 V P-Ch 0.77 1.1 IS = - 1.25 A, VGS = 0 V N-Ch - 0.77 - 1.1 N-Ch 9.5 15 P-Ch 16 25 N-Ch 1.8 P-Ch 2.3 N-Ch 1.55 V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Qg N-Channel VDS = 15 V, VGS = 10 V, ID = 4.3 A Qgs Qgd P-Channel VDS = - 15 V, VGS = - 10 V, ID = - 3.8 A Rg td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr N-Channel VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω P-Channel VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω P-Ch 4.5 N-Ch 0.45 P-Ch 8.8 nC Ω N-Ch 13 25 P-Ch 14 25 N-Ch 14 25 P-Ch 14 25 N-Ch 30 50 P-Ch 40 65 N-Ch 10 20 P-Ch 30 50 IF = 1.25 A, dI/dt = 100 A/µs N-Ch 30 60 IF = - 1.25 A, dI/dt = 100 A/µs P-Ch 30 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72244 S-81056-Rev. B, 12-May-08 Si6544BDQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 VGS = 10 thru 5 V 20 4V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 12 8 TC = 125 °C 4 3V 25 °C - 55 °C 0 0 1 2 3 4 0 0.0 5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.080 4.0 4.5 C - Capacitance (pF) 1100 0.064 0.048 VGS = 4.5 V RDS(on) - 0.5 VDS - Drain-to-Source Voltage (V) VGS = 10 V 0.032 0.016 880 Ciss 660 440 Coss 220 Crss 0.000 0 0 4 8 12 16 20 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 10 VGS = 10 V ID = 4.3 A VDS = 15 V ID = 4.3 A 1.4 - On-Resistance 6 DS(on) 4 (Normalized) 8 1.2 1.0 R V GS - Gate-to-Source Voltage (V) 18 0.8 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72244 S-81056-Rev. B, 12-May-08 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si6544BDQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.15 20 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.12 ID = 4.3 A 0.09 0.06 0.03 0.00 0.1 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 200 0.2 0.0 Power (W) V GS(th) Variance (V) 160 ID = 250 µA - 0.2 120 80 - 0.4 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10 -3 150 10 -2 TJ - Temperature (°C) 10 -1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on) * ID - Drain Current (A) 10 1 ms 1 10 ms 0.1 TC = 25 °C Single Pulse 100 ms 1s 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 72244 S-81056-Rev. B, 12-May-08 Si6544BDQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72244 S-81056-Rev. B, 12-May-08 www.vishay.com 5 Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 10 thru 5 V 16 4V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 12 8 TC = 125 °C 4 4 3V 25 °C 0 0.0 0 0 1 2 3 4 5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 4.5 1100 C - Capacitance (pF) 0.15 RDS(on) - On-Resistance (Ω) 0.5 - 55 °C 0.12 0.09 VGS = 4.5 V 0.06 880 Ciss 660 440 VGS = 10 V Coss 220 0.03 Crss 0 0.00 0 4 8 12 16 0 20 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 10 VGS = 10 V ID = 3.8 A VDS = 15 V ID = 3.8 A 1.4 - On-Resistance 6 DS(on) 4 (Normalized) 8 1.2 1.0 R V GS - Gate-to-Source Voltage (V) 18 0.8 2 0 0.0 3.2 6.4 9.6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 6 12.8 16.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72244 S-81056-Rev. B, 12-May-08 Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 20 10 - On-Resistance (Ω) TJ = 150 °C TJ = 25 °C DS(on) 1 R I S - Source Current (A) 0.16 ID = 3.8 A 0.12 0.08 0.04 0.00 0.1 0.0 0.3 0.6 0.9 1.2 1.5 0 2 VSD - Source-to-Drain Voltage (V) 0.6 200 0.4 160 ID = 250 µA Power (W) V GS(th) Variance (V) 6 8 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.2 0.0 - 0.2 - 0.4 - 50 4 VGS - Gate-to-Source Voltage (V) 120 80 40 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by R DS(on) * I D - Drain Current (A) 10 1 ms 1 10 ms 0.1 TC = 25 °C Single Pulse 100 ms 1s 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 72244 S-81056-Rev. B, 12-May-08 www.vishay.com 7 Si6544BDQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72244. www.vishay.com 8 Document Number: 72244 S-81056-Rev. B, 12-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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