New Product
SiZ900DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES PRODUCT SUMMARY
VDS (V) Channel-1 30 RDS(on) () 0.0072 at VGS = 10 V 0.0092 at VGS = 4.5 V 0.0039 at VGS = 10 V 0.0047 at VGS = 4.5 V ID (A) 24a 24a 28a 28
a
Qg (Typ.) 13.5 nC
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
34 nC
Channel-2
30
• Notebook System Power • POL • Synchronous Buck Converter
D1
PowerPAIR® 6 x 5
PIN1 1 2 D1 G2 8 7 6 5 S2 S1/D2 S2 S2 6 mm G1 D1 3 4 5 mm D1 D1
G1 N-Channel 1 MOSFET S1/D2
G2 N-Channel 2 MOSFET
Ordering Information: SiZ900DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Channel-1 30 ± 20 24 24a 19b, c 15.5b, c 90 24a 3.8b, c 20 20 48 31 4.6b, c 3b, c - 55 to 150 260
a
Channel-2
Unit V
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
28 28a 28b, c 22b, c 110 28a 4.3b, c 35 61 100 64 5.2b, c 3.3b, c
a
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Channel-1 Parameter
b, f
Channel-2 Typ. 19 1 Max. 24 1.25 Unit
Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2. Document Number: 67344 S11-1652-Rev. B, 15-Aug-11 www.vishay.com 1
t 10 s
Symbol RthJA RthJC
Typ. 22 2.1
Max. 27 2.6
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = 250 µA ID = 250 µA ID = 250 µA ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS = 30 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V VDS 5 V, VGS = 10 V VGS = 10 V, ID = 19.4 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 17.2 A VGS = 4.5 V, ID = 20 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 19.4 A Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 20 A Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 19.4 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz Ch-1 Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.5 0.2 1830 4900 300 710 120 280 29 73 13.5 34 5.8 15 3.1 7.3 2.4 0.9 4.8 1.8 45 110 21 51 nC pF gfs VDS = 10 V, ID = 19.4 A VDS = 10 V, ID = 20 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 25 0.0059 0.0072 0.0032 0.0039 0.0075 0.0092 0.0038 0.0047 76 120 S 1.2 1 30 30 32 32 -6 - 6.5 2.4 2.2 ± 100 ± 100 1 1 5 5 A µA V nA mV/°C V Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %.
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Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 10 A, VGS = 0 V IS = 10 A, VGS = 0 V TC = 25 °C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.8 0.8 16 30 6 21 9 17 7 13 ns 24 28 90 110 1.2 1.2 30 60 12 40 V ns nC A td(on) tr td(off) tf td(on) tr td(off) tf Ch-1 Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 35 10 10 25 35 10 10 15 15 10 7 30 40 10 10 40 70 20 20 50 70 20 20 30 30 20 15 60 80 20 20 ns Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
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New Product
SiZ900DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 VGS = 10 V thru 4 V 80 ID - Drain Current (A) 16 TC = - 55 °C 20
60
ID - Drain Current (A)
12
TC = 25 °C
40 VGS = 3 V 20
8
4
TC = 125 °C
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V)
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.010
2500
0.009
RDS(on) - On-Resistance (Ω)
2000 C - Capacitance (pF)
Ciss
0.008 VGS = 4.5 V 0.007
1500
1000
0.006 VGS = 10 V 0.005
500 Crss
Coss
0.004 0 20 40 ID - Drain Current (A) 60 80
0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10 ID = 18.8 A VDS = 7.5 V
RDS(on) - On-Resistance (Normalized)
Capacitance
1.8 ID = 19.4 A 1.6
VGS - Gate-to-Source Voltage (V)
8
1.4 VGS = 10 V, 4.5 V 1.2
6 VDS = 15 V 4 VDS = 24 V
1.0
2
0.8
0 0 6 12 18 24 Qg - Total Gate Charge (nC) 30
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.020 0.018 RDS(on) - On-Resistance (Ω) 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 19.4 A
IS - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
Source-Drain Diode Forward Voltage
2.2 2.0 80 1.8 1.6 ID = 250 μA 1.4 1.2 20 1.0 0.8 - 50 100
On-Resistance vs. Gate-to-Source Voltage
Power (W)
150
VGS(th) (V)
60
40
- 25
0
25
50
75
100
125
0 0.001
0.01
0.1
TJ - Temperature (°C)
1 Time (s)
10
100
1000
Threshold Voltage
1000 Limited by RDS(on)* 100 ID - Drain Current (A) 100 μs 10 1 ms 1 10 ms 100 ms 1s 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Single Pulse Power
0.1
TC = 25 °C Single Pulse
Safe Operating Area, Junction-to-Ambient
Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
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New Product
SiZ900DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70 60 40 50 40 30 20 10 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) 30 50
ID - Drain Current (A)
Package Limited
20
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 62 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted
0.01 0.0001
Single Pulse 0.001 0.01 0.1 1 10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001
0.001 Square Wave Pulse Duration (s)
0.01
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
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New Product
SiZ900DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 VGS = 10 V thru 4 V 80 ID - Drain Current (A) ID - Drain Current (A) 16 20
60 VGS = 3 V 40
12
TC = 25 °C
8 TC = 125 °C 4 TC = - 55 °C
20
0 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) 2.0
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 3.5
Output Characteristics
0.0050
Transfer Characteristics
6000 Ciss
0.0045
5000
RDS(on) - On-Resistance (Ω)
0.0040
C - Capacitance (pF)
VGS = 4.5 V
4000
0.0035
VGS = 10 V
3000
0.0030
2000 Coss Crss
0.0025
1000
0.0020 0 20 40 60 80 100 ID - Drain Current (A)
0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30
On-Resistance vs. Drain Current
10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 7.5 V
Capacitance
1.8
RDS(on) - On-Resistance (Normalized)
1.6
ID = 20 A
1.4 VGS = 10 V, 4.5 V 1.2
6 VDS = 15 V 4 VDS = 24 V
1.0
2
0.8
0 0 20 40 60 80 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
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New Product
SiZ900DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.010 ID = 20 A 0.008 IS - Source Current (A) TJ = 150 °C 10 RDS(on) - On-Resistance (Ω)
0.006 TJ = 125 °C 0.004 TJ = 25 °C 0.002
1
TJ = 25 °C
0.1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10
Source-Drain Diode Forward Voltage
2.2 2.0 80 1.8 1.6 ID = 250 μA 1.4 1.2 20 1.0 0.8 - 50 100
On-Resistance vs. Gate-to-Source Voltage
Power (W)
75 100 125 150
VGS(th) (V)
60
40
- 25
0
25
50
0 0.001
0.01
0.1
TJ - Temperature (°C)
1 Time (s)
10
100
1000
Threshold Voltage
1000 Limited by RDS(on)* 100
Single Pulse Power
ID - Drain Current (A)
10
1 ms 10 ms
1
100 ms 1s 10 s DC BVDSS Limited
0.1
TA = 25 °C Single Pulse
0.01 0.01
0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
140 120 80 100 80 60 40 Package Limited 20 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0 25 50 75 100 125 150 TC - Case Temperature (°C) 20 Power (W) 60 100
ID - Drain Current (A)
40
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10
Notes: PDM t1 t2 1. Duty Cycle, D =
0.1
t1 t2 2. Per Unit Base = R thJA = 56 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.05 0.02 Single Pulse
0.1 0.0001
0.001 Square Wave Pulse Duration (s)
0.01
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67344.
Document Number: 67344 S11-1652-Rev. B, 15-Aug-11
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Package Information
www.vishay.com PowerPAIR® 6 x 5 CASE OUTLINE
Vishay Siliconix
A 0.10 C 2X Pin 8 Pin 7 D Pin 6 Pin 5 L
K2 Pin 5
b Pin 6 Pin 7
K2 Pin 8
E
E1 Pin #1 Ident (Optional) E2 Pin 2 Pin 1
D1
K1
D1
0.10 C Pin 1 Pin 2 Pin 3 Pin 4 2X
Pin 4 e
Pin 3
BACK SIDE VIEW
b1
A
C Z Z
0.08
C
MILLIMETERS DIM. A A1 b b1 c D D1 E E1 E2 e K K1 K2 L 0.38 ECN: C11-0929-Rev. C, 25-Jul-11 DWG: 5978 MIN. 0.70 0.00 0.46 0.20 0.18 4.92 3.67 5.92 2.62 0.87 NOM. 0.75 0.51 0.25 0.20 5.00 3.80 6.00 2.67 0.92 1.27 BSC 0.45 TYP. 0.66 TYP. 0.60 TYP. 0.43 0.48 0.015 MAX. 0.80 0.05 0.56 0.38 0.23 5.08 3.92 6.08 2.72 0.97 MIN. 0.028 0.000 0.018 0.008 0.007 0.194 0.144 0.233 0.103 0.034
A1
0.10
C
c
K
INCHES NOM. 0.030 0.020 0.010 0.008 0.197 0.150 0.236 0.105 0.036 0.05 BSC 0.018 TYP. 0.026 TYP. 0.024 TYP. 0.017 0.019 MAX. 0.032 0.002 0.022 0.015 0.009 0.200 0.154 0.239 0.107 0.038
25-Jul-11
1
Document Number: 69027
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PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAIR® 6 x 5
7.080 (0.279)
0.407 (0.016) 2.720 (0.107) 0.616 (0.024) 3.920 (0.154) 0.970 (0.038) 0.700 (0.028) 0.407 (0.016) 1.270 (0.050) 0.560 (0.022)
8.080 (0.318) 5.820 (0.229)
(0,0) 1.960 (0.077)
0.567 (0.022)
2.153 (0.085) 3.260 Pin 1 (0.128) 2.185 (0.086)
Recommended Minimum Pad Dimensions in mm (inches)
Document Number: 67480 Revision: 13-Jan-11
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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