VESD05A5A-HS3

VESD05A5A-HS3 Vishay Semiconductors 5-line ESD Protection Diode Array in LLP75 Features • • • • Ultra compact LLP75 package 5-line ESD-protection e3 Low leakage current ESD protection to IEC 61000-4-2 ± 15 kV (Air) • ESD protection to IEC 61000-4-2 ± 15 kV (Contact) • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 19956 19957 Mechanical Data Case: LLP75-6A (plastic package) Lead (Pb)-free; non magnetic Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: 5 mg Packaging Codes/Options: GS18 = 10 k per 13" reel (8 mm tape), 10 k/box GS08 = 3 k per 7" reel (8 mm tape), 15 k/box Marking: S6 AE Square = Pin 1 marking S6 = Date Code (Example only) AE = Type Code for VESD05A5A-HS3 Absolute Maximum Ratings Tamb = 25 °C unless otherwise specified Parameter ESD Air Discharge per IEC 61000-4-2 ESD Contact Discharge per IEC 61000-4-2 Peak pulse power 8/20 µs waveform Peak pulse current 8/20 µs waveform Symbol VESD VESD PPPM IPPM Value ± 15 ± 15 33 2.5 Unit kV kV W A Thermal Characteristics Tamb = 25 °C unless otherwise specified Parameter Operating Temperature Storage Temperature Symbol TJ TSTG Value - 40 to + 125 - 55 to + 150 Unit °C °C Document Number 81250 Rev. 1.0, 16-Mar-06 www.vishay.com 1 VESD05A5A-HS3 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C unless otherwise specified Parameter Reverse Stand-Off Voltage Max. Reverse current Max. Clamping voltage Test Conditions at max. reverse current BiAs (Pin 1, 3-6 to Pin 2) at VR = 5 V at IPP = 2.5 A BiAs (Pin 1, 3-6 to Pin 2) acc. IEC 61000-4-5 at IPP = 2.5 A BiSy acc. IEC 61000-4-5 Max. Forward Clamping voltage at IPP = 2.5 A BiAs (Pin 2 to Pin 1, 3-6) acc. IEC 61000-4-5 BiAs and BiSy acc. IEC 61000-4-5 see Fig. 1 at IR = 1 mA BiAs1) Capacitance Forward voltage ESD-Clamping voltage (Over- / undershoot) 1) 1) Symbol VRWM IR VC Min. 5 Typ. Max. Unit V < 0.01 12 0.1 13 µA V Max. Clamping voltage VC 14 15.5 V VF 3.2 4 V Max. Peak pulse current Reverse Breakdown Voltage IPPM VBR CD VF VC-ESD 2.5 6.0 6.7 13 1.8 ± 90 7.5 15 2.1 A V pF V V at VR = 0 V ; f = 1 MHz at IF = 1 A ; tp < 300 µs at ± 8 kV ESD-pulse acc. IEC 61000-4-2 BiAs and BiSy are explained in the application notes on page 4 Typical Characteristics Tamb = 25 °C unless otherwise specified 16 f = 1 MHz 14 12 10 8 µs to 100 % 100 % 80 % 60 % 20 µs to 50 % CD in pF 20 30 40 IPPM 8 6 4 40 % 20 % 2 0% 0 19939 0 10 0 19948 1 2 3 4 5 Time in µs Figure 1. 8/20 μs Peak Pulse Current wave form acc. IEC 61000-4-5 VR in V Figure 2. Typical Capacitance CD vs. Reverse Voltage VR www.vishay.com 2 Document Number 81250 Rev. 1.0, 16-Mar-06 VESD05A5A-HS3 Vishay Semiconductors 100 80 10 60 40 20 0 - 20 - 10 0 10 20 30 40 50 60 70 80 90 19994 acc. IEC 61000-4-2 + 8 kV contact discharge 100 IF in mA 1 0.1 0.01 0.001 0.5 19949 0.6 0.7 0.8 0.9 1 1.1 VF in V VC-ESD in V t in ns Figure 3. Typical Forward Current IF vs. Forward Voltage VF Figure 6. Typical Clamping performance at + 8 kV contact discharge (acc. IEC 61000-4-2) 40 20 0 8 7 6 VR in V 5 4 3 2 1 0 0.01 19950 VC-ESD in V - 20 - 40 - 60 - 80 acc. IEC 61000-4-2 - 8 kV contact discharge 0.1 1 10 100 1000 10000 - 100 - 10 0 10 20 30 40 50 60 70 80 90 19995 IR in µA t in ns Figure 4. Typical Reverse Voltage VR vs. Reverse Current IR Figure 7. Typical Clamping performance at - 8 kV contact discharge (acc. IEC 61000-4-2) 200 150 14 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 12 10 8 Reverse acc. IEC 61000-4-2 contact discharge 100 VC-ESD in V VC in V 6 4 2 0 -2 -4 -6 0 19951 VC 50 VC-ESD 0 - 50 - 100 Forward - 150 - 200 0.5 1 1.5 2 2.5 3 3.5 4 0 19954 5 10 15 20 IPP in A VESD in kV Figure 5. Typical Clamping Voltage vs. Peak Pulse Current IPP Figure 8. Typical max. Clamping Voltage at ESD contact discharge (acc. IEC 61000-4-2) Document Number 81250 Rev. 1.0, 16-Mar-06 www.vishay.com 3 VESD05A5A-HS3 Vishay Semiconductors Application Note: a) With the VESD05A5A-HS3 5 different signal or data lines can be clamped to ground. Due to the different clamping levels in forward and reverse direction the VESD05A5A-HS3 clamping behavior is Bidirectional and Asymmetrical (BiAs). L1 L2 L3 L4 L5 19958 b) If symmetrical clamping behaviour is required the VESD05A5A-HS3 can also be used as a Bidirectional Symmetrical protection device protecting up to 4 lines. In this case pin no. 2 must not be connected. L1 L2 L3 L4 19959 www.vishay.com 4 Document Number 81250 Rev. 1.0, 16-Mar-06 VESD05A5A-HS3 Vishay Semiconductors Package Dimensions in mm (Inches) LLP75-6A 19986 Document Number 81250 Rev. 1.0, 16-Mar-06 www.vishay.com 5 VESD05A5A-HS3 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 81250 Rev. 1.0, 16-Mar-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1