IP4856CX25/C
SD 3.0-compliant memory card integrated dual level
translator with EMI filter and ESD protection
Rev. 3 — 13 December 2019
Product data sheet
1. General description
The device is an SD 3.0-compliant 6-bit bidirectional dual voltage level translator. It is designed to
interface between a memory card operating at 1.8 V or 2.9 V signal levels and a host with a fixed
nominal supply voltage of 1.7 V to 3.6 V. The device supports SD 3.0, SDR104, SDR50, DDR50,
SDR25, SDR12 and SD 2.0 high-speed (50 MHz) and default-speed (25 MHz) modes. The device
has an integrated voltage selectable low dropout regulator to supply the card-side I/Os, built-in EMI
filters and robust ESD protections (IEC 61000-4-2, level 4).
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
Supports up to 208 MHz clock rate
Feedback channel for clock synchronization
SD 3.0 specification-compliant voltage translation to support SDR104, SDR50, DDR50, SDR25,
SDR12, high-speed and default-speed modes
100 mA low dropout voltage regulator to supply the card-side I/Os
Low power consumption by push-pull output stage with break-before-make architecture
Integrated pull-up and pull-down resistors: no external resistors required
Integrated EMI filters suppress higher harmonics of digital I/Os
Integrated 8 kV ESD protection according to IEC 61000-4-2, level 4 on card side
Level shifting buffers keep ESD stress away from the host (zero-clamping concept)
25-ball WLCSP; pitch 0.4 mm
3. Applications
•
•
•
•
•
•
Smartphone
Mobile handsets
Digital cameras
Tablet PCs
Laptop computers
SD, MMC or microSD card readers
4. Ordering information
Table 1. Ordering information
Type number
Package
IP4856CX25/C
Name
Description
WLCSP25
wafer level chip-size package with back side coating; 25 bumps (5 x 5); typical
size: 2.05 mm x 2.05 mm x 0.51 mm
IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
5. Marking
Table 2. Marking code
Type number
Marking code
IP4856CX25/C
856
pin A1 marker
aaa-029856
Fig. 1.
Marking description
IP4856CX25_C
Product data sheet
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Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
6. Block diagram
VSUPPLY
VCCB
DC/DC
VSUPPLY
VCCA
VSD_REF
IP4856CX25
SEL
LDO +
CONTROL
LOGIC
ENABLE
CLK_IN
CLK_FB
CLK_SD
CMD_DIR
CMD_H
HOST/
BASE
BAND
EMI
2 kV ESD
PROTECTION
DIR_0
CMD_SD
EMI FILTER
AND
RESISTOR
NETWORK
DATA0_H
8 kV ESD
PROTECTION
DIR_1_3
DATA0_SD
DATA1_H
DATA1_SD
DATA2_H
DATA2_SD
DATA3_H
DATA3_SD
WP
CD
MEMORY
CARD
WP
ESD
CD
aaa-012881
Fig. 2.
Block diagram
IP4856CX25_C
Product data sheet
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
7. Functional diagram
VSUPPLY
SEL
CARD SIDE
1.8 V OR 2.9 V
R21
VSD_REF
R38
CLK_IN
CLK_FB
VOLTAGE SELECT
+
INTERNAL REFERENCE
VOLTAGE
REGULATOR
VLDO
R31
R1
R32
R10
DIR_CMD
CMD_H
R2
R11
R3
DATA0_SD
R34
R12
DIR_1_3
DATA1_H
CMD_SD
R33
DIR_0
DATA0_H
CLK_SD
R4
DATA1_SD
R35
R13
R5
DATA2_H
DATA2_SD
R36
R6
DATA3_H
DATA3_SD
R37
R7
VCCA
R14
ENABLE
R20
R15
CD
R30
WP
GND
aaa-004565
Fig. 3.
Functional diagram
IP4856CX25_C
Product data sheet
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
8. Pinning information
8.1. Pinning
bump A1
index area
1
2
3
4
5
A
B
C
D
E
aaa-015216
transparent top view,
solder balls facing down
Fig. 4.
Pin configuration WLCSP25
Table 3. Pin allocation table
Pin
Symbol
Pin
Symbol
Pin
Symbol
Pin
Symbol
Pin
Symbol
A1
DATA2_H
A2
DIR_CMD
A3
DIR_0
A4
VSUPPLY
A5
DATA2_SD
B1
DATA3_H
B2
SEL
B3
VCCA
B4
VLDO
B5
DATA3_SD
C1
CLK_IN
C2
ENABLE
C3
GND
C4
VSD_REF
C5
CLK_SD
D1
DATA0_H
D2
CMD_H
D3
CD
D4
CMD_SD
D5
DATA0_SD
E1
DATA1_H
E2
CLK_FB
E3
DIR_1_3
E4
WP
E5
DATA1_SD
8.2. Pin description
Table 4. Pin description
Symbol[1]
Pin
Type[2] Description
IP4856CX25_C
Product data sheet
DATA2_H
A1
I/O
data 2 input or output on host side
DIR_CMD
A2
I
direction control input for command
DIR_0
A3
I
direction control input for data 0
VSUPPLY
A4
S
supply voltage (from battery or regulator)
DATA2_SD
A5
I/O
data 2 input or output on memory card side
DATA3_H
B1
I/O
data 3 input or output on host side
SEL
B2
I
card side I/O voltage level select
VCCA
B3
S
supply voltage from host side
VLDO
B4
O
internal supply decoupling
DATA3_SD
B5
I/O
data 3 input or output on memory card side
CLK_IN
C1
I
clock signal input on host side
ENABLE
C2
I
device enable input
GND
C3
S
supply ground
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
Symbol[1]
Pin
Type[2] Description
VSD_REF
C4
I
reference voltage for the internal voltage regulator
CLK_SD
C5
O
clock signal output on memory card side
DATA0_H
D1
I/O
data 0 input or output on host side
CMD_H
D2
I/O
command input or output on host side
CD
D3
O
card detect switch biasing output
CMD_SD
D4
I/O
command input or output on memory card side
DATA0_SD
D5
I/O
data 0 input or output on memory card side
DATA1_H
E1
I/O
data 1 input or output on host side
CLK_FB
E2
O
clock feedback output on host side
DIR_1_3
E3
I
direction control input for data 1, data 2, data 3
WP
E4
O
write protect switch biasing output
DATA1_SD
E5
I/O
data 1 input or output on memory card side
[1]
[2]
The pin names relate particularly to SD memory cards, but also apply to microSD and MMC memory
cards.
I = input, O = output, I/O = input and output, S = power supply.
9. Functional description
9.1. Level translator
The bidirectional level translator shifts the data between the I/O supply levels of the host and the
memory card. Dedicated direction control signals determine if a command and data signals are
transferred from the memory card to the host (card read mode) or from the host to the memory
card (card write mode). The voltage translator has to support several clock and data transfer rates
at the signaling levels specified in the SD 3.0 standard specification.
IP4856CX25_C
Product data sheet
Table 5. Supported modes
Bus speed mode
Signal level (V)
Clock rate (MHz)
Data rate (MB/s)
Default-speed
3.3
25
12.5
High-speed
3.3
50
25
SDR12
1.8
25
12.5
SDR25
1.8
50
25
SDR50
1.8
100
50
SDR104
1.8
208
104
DDR
1.8
50
50
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
9.2. Enable and direction control
The pin ENABLE enables/disables the internal Low DropOut (LDO) regulator and is used to put the
host-side and card-side I/O drivers into high-ohmic (3-state) mode.
Table 6. I/O function control signal truth table
Control
Host side
Pin
Level[1]
Pin
Memory card side
Function
Pin
Function
Pin ENABLE = HIGH and VCCA ≥ 1.62 V
DIR_CMD
DIR_0
DIR_1_3
H
CMD_H
input
CMD_SD
output
L
CMD_H
output
CMD_SD
input
H
DATA0_H
input
DATA0_SD
output
L
DATA0_H
output
DATA0_SD
input
H
DATA1_H
input
DATA1_SD
output
L
DATA2_H
DATA2_SD
DATA3_H
DATA3_SD
DATA1_H
output
DATA1_SD
DATA2_H
DATA2_SD
DATA3_H
DATA3_SD
input
-
-
CLK_IN
input
CLK_SD
output
-
-
CLK_FB
output
-
-
Pin ENABLE = LOW or VCCA ≤ 0.8 V
DIR_CMD
X
CMD_H
high-ohmic
CMD_SD
high-ohmic
DIR_0
X
DATA0_H
high-ohmic
DATA0_SD
high-ohmic
DIR_1_3
X
DATA1_H
high-ohmic
DATA1_SD
high-ohmic
Product data sheet
DATA2_SD
DATA3_H
DATA3_SD
-
-
CLK_IN
input
CLK_SD
high-ohmic
-
-
CLK_IN
high-ohmic
-
-
[1]
IP4856CX25_C
DATA2_H
H = HIGH; L = LOW; X = don´t care
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
9.3. Integrated voltage regulator
The low dropout voltage regulator delivers supply voltage for the voltage translators and the cardside input/output stages. It has to support 1.8 V and 3 V signaling modes as stipulated in the SD
3.0 specification. The switching time between the two output voltage modes is compliant with SD
3.0 specification. Depending on the signaling level at pin SEL, the regulator delivers 1.8 V (SEL =
HIGH) or 2.9 V (SEL = LOW, VSD_REF < 1 V). For card supply voltage, see Section 9.4.
Table 7. SD card side voltage level control signal truth table
Input
Output
SEL[1]
VSD_REF[1] VLDO
Pin[2]
Function
H
X
1.8 V
DATA0_SD to DATA3_SD, CLK_SD
low supply voltage level (1.8 V typical)
L
1.5 V
VSD_REF DATA0_SD to DATA3_SD, CLK_SD
supply voltage level based on VSD_REF
[1]
[2]
H = HIGH; L = LOW; X = don´t care.
Host-side pins are not influenced by SEL.
An external capacitor is needed between the regulator output pin VLDO and ground for proper
operation of the integrated voltage regulator. See Table 9 for recommended capacitance and
equivalent series resistance. It is recommended to place the capacitor close to the VLDO pin and
maintain short connections to both, to the VLDO and to the ground.
9.4. Memory card voltage tracking (reference select)
The device can track the memory card supply via pin VSD_REF. This allows achieving optimum
interoperability by perfectly matching input/output levels between voltage translator and memory
card in the 3 V signaling mode. Therefore, the voltage regulator aims to follow the reference
voltage provided at input VSD_REF directly. If tracking of the memory card supply is not desired,
connect pin VSD_REF to ground so the voltage regulator refers to an integrated voltage reference.
For 1.8 V (SEL = HIGH) signaling, the voltage regulator is referred to the internal reference which is
independent of the voltage at VSD_REF.
9.5. Feedback clock channel
The clock is transmitted from the host to the memory card side. The voltage translator and the
Printed-Circuit Board (PCB) tracks introduce some amount of delay. It reduces timing margin for
data read back from memory card, especially at higher data rates. Therefore, a feedback path is
provided to compensate the delay. The reasoning behind this approach is the fact that the clock is
always delivered by the host, while the data in the timing critical read mode comes from the card.
9.6. EMI filter
All input/output driver stages are equipped with EMI filters to reduce interferences towards
sensitive mobile communication.
9.7. ESD protection
The device has robust ESD protections on all memory card pins as well as on the VSD_REF and
VSUPPLY pins. The architecture prevents any stress for the host: the voltage translator discharges
any stress to supply ground.
Pins Write Protect (WP) and Card Detection (CD) might be pulled down by the memory card which
has to be detected by the host. Both signals must be HIGH if no card is inserted. Therefore the pins
are equipped with International Electrotechnical Commission (IEC) system-level ESD protections
and pull-up resistors connected to the host supply VCCA.
IP4856CX25_C
Product data sheet
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Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
10. Limiting values
Table 8. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
4 ms transient; on pin VSUPPLY
-0.5
4.6
V
4 ms transient; on pin VCCA
-0.5
4.6
V
VI
input voltage
4 ms transient at I/O pins
-0.5
4.6
V
Ptot
total power dissipation
Tamb = -40 °C to 85 °C
-
1000
mW
Tstg
storage temperature
-55
150
°C
Tamb
ambient temperature
-40
85
°C
VESD
electrostatic discharge voltage
IEC 61000-4-2, level 4; all memory card-side pins, [1] -8
VSUPPLY, VSD_REF, WP and CD to ground; contact
discharge
8
kV
IEC 61000-4-2, level 4; all memory card-side
[1] -15
pins, VSUPPLY, VSD_REF, WP and CD to ground; air
discharge
15
kV
JESD78B: -0.5 x VCC < VI < 1.5 x VCC; Tj < 125 °C
100
mA
Ilu(IO)
[1]
input/output latch-up current
-100
All system level test are performed with the application-specific capacitors connected to the supply pins VSUPPLY, VLDO and VCCA.
IP4856CX25_C
Product data sheet
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
11. Recommended operating conditions
Table 9. Operating conditions
Symbol Parameter
Conditions
VCC
on pin VSUPPLY
supply voltage
Typ
Max
Unit
[1] 2.8
-
3.6
V
1.7
-
VSUPPLY
V
[2] -0.3
-
VCCA + 0.3
V
memory card side
-0.3
-
VO(reg) + 0.3 V
recommended capacitor at pin VLDO
-
1.0
-
µF
recommended capacitor at pin VSUPPLY
-
0.1
-
µF
recommended capacitor at pin VCCA
-
0.1
-
µF
at pin VLDO
0
-
50
mΩ
on pin VCCA
VI
input voltage
Cext
external capacitance
ESR
[1]
[2]
host side
equivalent series resistance
Min
By minimum value the device is still fully functional, but the voltage on pin VLDO might drop below the recommended memory card
supply voltage.
The voltage must not exceed 3.6 V.
Table 10. Integrated resistors
Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rpd
pull-down resistance
R7
272
470
668
kΩ
R30
70
100
130
Ω
R20; R21; R38
200
350
500
kΩ
R10
10.5
15
19.5
kΩ
R11 to R13
49
70
91
kΩ
R14 and R15
70
100
130
kΩ
Rpu
pull-up resistance
Rs
[1]
series resistance
card side; R1 to R6
[1] 12
15
18
Ω
host side; R31 to R37
[1] 18
22.5
27
Ω
Guaranteed by design and characterization
IP4856CX25_C
Product data sheet
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Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
12. Static characteristics
Table 11. Static characteristics
At recommended operating conditions; Tamb = -40 °C to 85 °C; voltages are referenced to GND (ground = 0 V); Cext = 1 µF
at pin VLDO; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ [1]
Max
Unit
SEL = LOW; VSD_REF < 1 V;
VSUPPLY ≥ 2.9 V
2.7
2.9
3.3
V
SEL = LOW; VSD_REF < 1.5 V;
VSUPPLY ≥ VSD_REF
VSD_REF 0.15
VSD_REF VSD_REF +
0.15
V
SEL = HIGH; VSUPPLY ≥ 2.5 V
1.7
1.85
2.0
V
SEL = LOW; VSUPPLY ≥ 2.9 V;
IO = 50 mA
-
-
150
mV
-
-
100
mA
Supply voltage regulator for card-side I/O pin: VLDO
VO(reg)
regulator output voltage
Vdo(reg)
regulator dropout voltage
IO(reg)
regulator output current
Host-side input signals: CMD_H, DATA0_H to DATA3_H and CLK_IN
VIH
HIGH-level input voltage
0.625 x VCCA
-
VCCA + 0.3
V
VIL
LOW-level input voltage
-0.3
-
0.35 x VCCA
V
ILI
input leakage current
-
1.0
nA
VCCA = 1.8 V; ENABLE = LOW
[2] -
Host-side control signals
VIH
HIGH-level input voltage
-
VCCA + 0.3
V
LOW-level input voltage
SEL, ENABLE, DIR_0,
DIR_1_3 and DIR_CMD
0.625 x VCCA
VIL
-0.3
-
0.35 x VCCA
V
VIH
HIGH-level input voltage
VSD_REF
1.5
-
3.63
V
VIL
LOW-level input voltage
-0.3
-
1.0
V
Host-side output signals: CLK_FB, CMD_H and DATA0_H to DATA3_H
VOH
HIGH-level output voltage IO = 2 mA; VI = VIH (card side)
0.85 x VCCA
-
-
V
VOL
LOW-level output voltage
-
-
0.125 x VCCA
V
IO = -2 mA; VI = VIL (card side)
Card-side input signals: CMD_SD and DATA0_SD to DATA3_SD
VIH
VIL
SEL = LOW (2.9 V interface)
0.625 x VO(reg) -
VO(reg) + 0.3
V
SEL = HIGH (1.8 V interface)
0.625 x VO(reg) -
VO(reg) + 0.3
V
SEL = LOW (2.9 V interface)
-0.3
-
0.35 x VO(reg)
V
SEL = HIGH (1.8 V interface)
-0.3
-
0.35 x VO(reg)
V
HIGH-level output voltage IO = 4 mA; VI = VIH (host side);
SEL = LOW (2.9 V interface)
0.85 x VO(reg)
-
VO(reg) + 0.3
V
IO = 2 mA; VI = VIH (host side);
SEL = HIGH (1.8 V interface)
0.85 x VO(reg)
-
2.0
V
IO = -4 mA; VI = VIL (host side);
SEL = LOW (2.9 V interface)
-0.3
-
0.125 x VO(reg) V
IO = -2 mA; VI = VIL (host side);
SEL = HIGH (1.8 V interface)
-0.3
-
0.125 x VO(reg) V
HIGH-level input voltage
LOW-level input voltage
Card-side output signal
CMD_SD, DATA0_SD to DATA3_SD and CLK_SD
VOH
VOL
Low-level output voltage
Bus signal equivalent capacitance
Cch
channel capacitance
IP4856CX25_C
Product data sheet
VI = 0 V; fi = 1 MHz; VSUPPLY =
3.5 V; VCCA = 1.8 V; host side
[3] -
3.5
5
pF
VI = 0 V; fi = 1 MHz; VSUPPLY =
3.5 V; VCCA = 1.8 V; card side
[3] -
5
10
pF
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Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
Symbol Parameter
Conditions
Min
Typ [1]
Max
Unit
ENABLE = HIGH (active mode);
all inputs = HIGH; DIR = LOW;
SEL = LOW (2.9 V interface)
-
-
100
µA
ENABLE = HIGH (active mode);
all inputs = HIGH; DIR = LOW;
SEL = HIGH (1.8 V interface)
-
-
100
µA
ENABLE = LOW (inactive mode)
-
-
1
µA
Current consumption
ICC(stat)
ICC(stb)
[1]
[2]
[3]
static supply current
standby supply current
Typical values are measured at Tamb = 25 °C.
Guaranteed by design and characterization.
EMI filter line capacitance per data channel from I/O driver to pin; Cch is guaranteed by design.
13. Dynamic characteristics
13.1. Voltage regulator
Table 12. Voltage regulator
Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tstartup(reg) regulator start-up time
VCCA = 1.8 V; VSUPPLY = 3.5 V; Cext = 1 µF; Fig. 6
-
-
100
µs
tf(o)
output fall time
VO(reg) = 2.9 V to 1.8 V; SEL = LOW to HIGH; Fig. 5 -
-
1
ms
tr(o)
output rise time
VO(reg) = 1.8 V to 2.9 V; SEL = HIGH to LOW; Fig. 5 -
-
100
µs
Voltage regulator output pin: VLDO
2.9 V
2.9 V
CLK_SD
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
0V
5 ms (min.)
2.9 V
2.9 V
CMD
0V
2.9 V
2.9 V
DATA[3:0]
0V
SEL
0V
50 %
tf(o)
2.9 V
VLDO
1.8 V
Fig. 5.
50 %
0V
tr(o)
1.8 V
150 mV
1.8 V
2.9 V
97 %
aaa-004566
Regulator mode change timing
IP4856CX25_C
Product data sheet
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
VI
50 %
ENABLE
GND
tstartup(reg)
VO(reg)
97 %
regulator
output
0V
001aah981
Measuring points: ENABLE signal at 0.5 VCCA and regulator output signal at 0.97 VO(reg).
Fig. 6.
Regulator start-up time
13.2. Level translator
Table 13. Level translator dynamic characteristics
At recommended operating conditions; VCCA = 1.8 V; Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Host-side transition times
tr
rise time
SEL = HIGH (1.8 V interface)
[1] -
0.4
1.0
ns
tf
fall time
SEL = HIGH (1.8 V interface)
[1] -
0.4
1.0
ns
Card-side transition times
tr
rise time
SEL = HIGH (1.8 V interface)
[2] 0.4
0.9
1.4
ns
tf
fall time
SEL = HIGH (1.8 V interface)
[2] 0.4
0.9
1.4
ns
-
2.4
3.5
ns
-
4.8
7.0
ns
-
2.4
3.5
ns
Host-side to card-side propagation delay
DATAx_H to DATAx_SD, CMD_H to CMD_SD and CLK_IN to CLK_SD
tpd
propagation delay
SEL = HIGH (1.8 V interface)
Host-side to host-side propagation delay
CLK_IN to CLK_FB
tpd
propagation delay
SEL = HIGH (1.8 V interface)
Card-side to host-side propagation delay
DATAx_SD to DATAx_H and CMD_SD to CMD_H
tpd
[1]
[2]
propagation delay
SEL = HIGH (1.8 V interface)
Transition between VOL = 0.35 x VCCA and VOH = 0.65 x VCCA.
Transition between VOL = 0.45 V and VOH = 1.4 V.
VCC
20 %
tt
70 %
VIH
VIL
GND
10 %
Fig. 7.
tt
90 %
aaa-004569
Output rise and fall times
IP4856CX25_C
Product data sheet
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
VCC
VIH
VIH
CLK_IN
VIL
VIL
GND
output delay time
VCC
VOH
DATA[3:0]_SD
VOH
GND
Fig. 8.
aaa-012908
Output delay timing
13.3. ESD characteristics of pin write protect and card detect
Table 14. ESD characteristics of pin write protect and card detect
At recommended operating conditions; VCCA = 1.8 V; Tamb = 25 °C; unless otherwise specified;
voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Typ
Max Unit
-
8
-
V
ESD protection pins: WP and CD
VBR
breakdown voltage
TLP; I = 1 mA
rdyn
dynamic resistance
positive transient
[1] -
0.5
-
Ω
negative transient
[1] -
0.5
-
Ω
[1]
IP4856CX25_C
Product data sheet
TLP according to ANSI/ESD STM5.5.1/IEC 62615 Zo = 50 Ω; pulse with = 100 ns; rise time = 200 ps:
averaging window = 50 ns to 80 ns.
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
14. Test information
pulse width
VI
70 %
negative
input
50 %
0V
VI
tf(o)
tr(o)
tr(o)
tf(o)
70 %
positive
input
0V
50 %
20 %
50 %
50 %
20 %
pulse width
VSUPPLY VCC
PULSE
GENERATOR
Rsource
VI
DUT
50 Ω
VO
Rterm
CL
RL
aaa-004707
Definitions test circuit:
Rsource = source resistance of pulse generator.
Rterm = termination resistance should be equal to output impedance Zo of pulse generator.
CL = load capacitance including jig and probe capacitance.
RL = load resistance.
Fig. 9.
Load circuitry for measuring switching time
IP4856CX25_C
Product data sheet
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
15. Package outline
WLCSP25: wafer level chip-size package with back side coating; 25 bumps (5 x 5)
D
A2
bump A1
index area
E
A
A1
detail X
e1
e
b
E
e
D
e1
C
B
A
European
projection
1
2
3
4
5
X
wlcsp25_5x5_c_po
Fig. 10. Package outline IP4856CX25/C (WLCSP25 with back side coating)
Table 15. Dimensions for Figure 9
Symbol
Min
Typ
Max
Unit
A
0.47
0.51
0.55
mm
A1
0.18
0.20
0.22
mm
A2
0.03
0.04
0.05
mm
b
0.23
0.25
0.27
mm
D
2.01
2.05
2.09
mm
E
2.01
2.05
2.09
mm
e
-
0.4
-
mm
e1
-
1.6
-
mm
IP4856CX25_C
Product data sheet
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IP4856CX25/C
Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
16. Design and assembly recommendations
16.1. PCB design guidelines
For optimum performance, use a Non-Solder Mask PCB Design (NSMD), also known as a copperdefinied design, incorporating laser-drilled micro-vias connecting the ground pads to a buried
ground-plane layer. This results in the lowest possible ground inductance and provides the best
high frequency and ESD performance. For this case, refer to Table 16 for the recommended PCB
design parameters.
Table 16. Recommended PCB design parameters
Parameter
Value or specification
PCB pad diameter
250 µm
Micro-via diameter
100 µm (0.004 inch)
Solder mask aperture diameter
325 µm
Copper thickness
20 µm to 40 µm
Copper finish
AuNi or OSP
PCB material
FR4
16.2. PCB assembly guidelines for Pb-free soldering
Table 17. Assembly recommendations
Parameter
Value or specification
Solder screen aperture diameter
290 µm
Solder screen thickness
100 µm (0.004 inch)
Solder paste: Pb-free
SnAg (3 % to 4 % Cu (0.5 % to 0.9 %)
Solder to flux ratio
50 : 50
Solder reflow profile
see Fig. 11
T
(°C)
Treflow(peak)
250
230
cooling rate
217
preheat
t1
t5
t (s)
t2
t3
t4
001aai943
The device can withstand at least three reflows with this profile.
Fig. 11. Pb-free solder reflow profile
IP4856CX25_C
Product data sheet
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Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
Table 18. Reflow soldering process characteristics
Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
treflow(peak) peak reflow temperature
Min
Typ
Max
Unit
230
-
260
°C
t1
time 1
soak time
60
-
180
s
t2
time 2
time during T ≥ 250 °C
-
-
30
s
t3
time 3
time during T ≥ 230 °C
10
-
50
s
t4
time 4
time during T ≥ 217 °C
30
-
150
s
t5
time 5
dT/dt
rate of change of
temperature
-
-
540
s
cooling rate
-
-
-6
°C/s
preheat
2.5
-
4.0
°C/s
17. Abbreviations
Table 19. Abbreviations
Acronym
Description
IP4856CX25_C
Product data sheet
DUT
Device Under Test
EMI
ElectroMagnetic Interface
ESD
ElectroStatic Discharge
FR4
Flame Retard 4
MMC
MultiMedia Card
NSMD
Non-Solder Mask PCB Design
OSP
Organic Solderability Preservation
PCB
Printed-Circuit Board
RoHS
Restriction of Hazardous Substances
SD
Secure Digital
WLCSP
Wafer-Level Chip-Scale Package
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SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
18. Revision history
Table 20. Revision history
Data sheet ID
Release date
Data sheet status
Change notice Supersedes
IP4856CX25_C v.3
20191213
Product data sheet
-
Modifications:
•
•
•
IP4856CX25_C v.2
The format of this data sheet has been redesigned to comply with the identity guidelines
of Nexperia.
Legal texts have been adapted to the new company name where appropriate.
Added figure "Marking description"
IP4856CX25_C v.2
20141015
Product data sheet
-
IP4856CX25 v.1
IP4856CX25 v.1
20140602
Preliminary data sheet
-
-
IP4856CX25_C
Product data sheet
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Nexperia
SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
19. Legal information
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
IP4856CX25_C
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, the
product is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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SD 3.0-compliant memory card integrated dual level translator with EMI filter and ESD protection
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Ordering information....................................................1
5. Marking.......................................................................... 2
6. Block diagram...............................................................3
7. Functional diagram.......................................................4
8. Pinning information......................................................5
8.1. Pinning.........................................................................5
8.2. Pin description............................................................. 5
9. Functional description................................................. 6
9.1. Level translator............................................................ 6
9.2. Enable and direction control........................................ 7
9.3. Integrated voltage regulator.........................................8
9.4. Memory card voltage tracking (reference select)......... 8
9.5. Feedback clock channel.............................................. 8
9.6. EMI filter...................................................................... 8
9.7. ESD protection............................................................ 8
10. Limiting values........................................................... 9
11. Recommended operating conditions...................... 10
12. Static characteristics................................................11
13. Dynamic characteristics.......................................... 12
13.1. Voltage regulator..................................................... 12
13.2. Level translator........................................................ 13
13.3. ESD characteristics of pin write protect and card
detect.................................................................................. 14
14. Test information........................................................15
15. Package outline........................................................ 16
16. Design and assembly recommendations............... 17
16.1. PCB design guidelines............................................ 17
16.2. PCB assembly guidelines for Pb-free soldering....... 17
17. Abbreviations............................................................ 18
18. Revision history........................................................19
19. Legal information......................................................20
©
Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 13 December 2019
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Product data sheet
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