MBRF30200CT

SANGDEST MICROELECTRONICS MBRF30200CT Green Products Technical Data Data Sheet N0855, Rev. A MBRF30200CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 °C T J operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request OUTLINE DRAWING Mechanical Dimensions: In mm Dim A OPTION 1(CJ) Min Max 4.4 4.6 OPTION 2(HD) Min Max 4.30 4.70 b 0.6TYP 0.50 0.75 b1 1.3TYP 1.30 1.40 b2 1.7TYP 1.70 1.80 b3 1.6TYP 1.50 1.75 b4 1.2TYP 1.10 1.35 C 0.60TYP 0.50 0.75 D 14.8 15.1 14.80 15.20 E 10.06 10.26 9.96 10.36 e 2.55TYP 2.54TYP F 2.9 3.1 2.80 3.20 G 6.5 6.9 6.50 6.90 L 12.7 13.7 12.8 13.2 L1 3.4 3.8 3.60 4.00 L2 2.6 3.0 - - Q 2.5 2.9 2.50 2.90 Q1 2.5 2.9 ØR 3.5REF 2.70REF 3.50REF • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF30200CT Green Products Technical Data Data Sheet N0855, Rev. A OPTION 3 OPTION 4 Dim Min Max Min Max A 4.53 4.93 4.50 4.90 b 0.71 0.91 0.70 0.90 b1 1.15 1.39 1.33 1.47 C 0.36 0.53 0.45 0.60 D 15.67 16.07 15.67 16.07 E 9.96 10.36 9.96 10.36 e 2.54TYP 2.54 BSC F 2.34 2.76 2.34 2.74 G 6.50 6.90 6.48 6.88 L 12.37 12.77 12.78 13.18 L1 2.23 2.63 3.03 3.43 Q 2.56 2.96 2.56 2.96 Q1 3.10 3.50 3.10 3.50 ØR 2.98 3.38 3.08 3.28 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF30200CT Green Products Technical Data Data Sheet N0855, Rev. A OPTION 5 (SR) ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF30200CT Green Products Technical Data Data Sheet N0855, Rev. A Marking Diagram: Where XXXXX is YYWWL MBR F 30 200 CT SSG YY WW L = Device Type = Package type = Forward Current (30A) = Reverse Voltage (200V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package ITO-220AB (Pb-Free) MBRF30200CT Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Peak Repetitive Forward Current (per leg) Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM IF(AV) IFRM IFSM Condition 50% duty cycle @TC =133°C, rectangular wave form Rated VR square wave 20KHz TC =133°C Max. 200 Units V 30 A 20 A 8.3 ms, half Sine pulse 150 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF30200CT Green Products Technical Data Data Sheet N0855, Rev. A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg)* Max. Reverse Current (per leg)* Symbol Units @ 15A, Pulse, TJ = 25 °C 0.90 V VF2 @ 15 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Clip mounting, the epoxy body away from the heatsink edge by more than 0.110" along the lead direction. Clip mounting, the epoxy body is inside the heatsink. Screw mounting, the epoxy body is inside the heatsink. 0.75 V 1.0 mA 6.0 mA 400 pF 10,000 V/µs IR1 CT dv/dt VISO * Max. VF1 IR2 Max. Junction Capacitance (per leg) Max. Voltage Rate of Change RSM Isolation Voltage (t = 1.0 second, R. H. < =30%, TA = 25 °C) Condition 4500 V 3500 1500 Pulse Width < 300µs, Duty Cycle