MBRF30200CT

MBRF30200CT Schottky Diodes ●Features： ■Common Cathode Structure ■Low Power Loss and High Efficiency ■Low Forward Voltage Drop ■High Surge Capability ●Application: ■ High Frequency Switch ■ Free Wheeling,and Polarity Protection Applications Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 200 V VR Maximum DC Reverse Voltage IF(AV) IFSM 200 15(Per Leg) Average Rectified Forward Current, Tc=120C 30(Per Device) Peak Forward Surge Current,8.3ms Half Sine wave 250 V A A Tj Operating Junction Temperature 150 C Tstg Storage Temperature Range -55 to+150 C Thermal Characteristics(Tc=25C unless otherwise noted) Symbol Parameter Max Unit RθJC Thermal Resistance,Junction to Case Per Leg 3.2 C /W Electrical Characteristics(Tc=25C unless otherwise noted) Symbol VRRM Parameter Maximum Repetitive Reverse Voltage IR Reverse Current VF Forward Voltage www.slkormicro.com Test Conditons Min IR=100μA 200 VR =200V Tc=25C VR =200V Tc=125C IF=15A Tc=25C IF=15A Tc=125C IF=30A Tc=25C IF=30A Tc=125C 1 Max Unit V 0.1 5 0.97 0.87 1.14 1.04 mA V MBRF30200CT Typical Performance Characteristics Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current Figure 3. Junction Capacitance Figure 4. Power Derating www.slkormicro.com 2 MBRF30200CT TO-220F Package Dimensions SYMBOL A A1 A2 A3 B1 B2 B3 C C1 C2 www.slkormicro.com min 9.80 2.90 9.10 15.40 4.35 6.00 3.00 15.00 8.80 nom 7.00 max 10.60 SYMBOL D D1 D2 D3 E E1 E2 E3 E4 α（度） 3.40 9.90 16.40 4.95 7.40 3.70 17.00 10.80 3 min 1.15 0.60 0.20 2.24 nom 2.54 0.70 UNIT：mm max 1.55 1.00 0.50 2.84 1.0×45° 0.35 2.30 30° 0.65 3.30