WSD2050DN

WSD2050DN N-Ch MOSFET Product Summery General Description The WSD2050DN is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 20V 8.2mΩ 40A Applications The WSD2050DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3.3x3.3-8_EP1 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ V 40 A 1 28 A 85 A 14 A Total Power Dissipation 28 W Operating Junction Temperature Range -55 to 150 ℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V IAS Avalanche Current TSTG V ±12 Pulsed Drain Current TJ 20 1 IDM PD@TC=25℃ Units 2 4 Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Typ. Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 1 Thermal Resistance Junction-Case Page 1 Max. 70 ℃/W --- 50 ℃/W --- 4.7 ℃/W --- Unit Dec.2014 WSD2050DN N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gf gfs orward Transconductance Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA ----- 0.0 --- V/℃ VGS=10V , ID=7A --- 8.2 14 VGS=4.5V , ID=6A --- 9.5 16 VGS=2.5V , ID=5A --- 12.5 20 VGS=1.8V , ID=2A --- 18 28 VGS=VDS , ID =250uA 0.4 0.6 1.0 VDS=20V , VGS=0V , TJ=25℃ --- --- 1 VDS=20V , VGS=0V , TJ=55℃ --- --- 5 VGS=±12V , VDS=0V --- --- ±100 nA VDS=5V , ID=7A 20 --- --- S VDS=0V , VGS=0V , f=1MHz --- 1.0 1.5 Ω VDS=15V , VGS=10V , ID=7A Rg Gate Resistance Qg Total Gate Charge (4.5V) --- 10 12 Gate-Source Charge --- 3.5 4.1 Gate-Drain Charge --- 4.2 4.7 Turn-On Delay Time --- 9 17 Qgs Qgd Td(on) mΩ mΩ V uA nC Rise Time VDD=15V , VGS=10V , RG=6Ω --- 11 23 Turn-Off Delay Time ID=1A ,RL=15Ω --- 29 52 Fall Time --- 7 12 Ciss Input Capacitance --- 1200 --- Coss Output Capacitance --- 185 --- Crss Reverse Transfer Capacitance --- 113 --- Min. Typ. Max. Unit Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions 1,6 Continuous Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current --- ---- 20 A VGS=0V , IS=2A , TJ=25℃ --- ---- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t