UMW IRLML5203

UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS SOT–23 IRLML5203 P-Channel 30-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX \85mΩ@-10 V  -30V -3.0A  145mΩ@-4.5V  1. BASE 2. EMITTER 3. COLLECTOR General Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Equivalent Circuit MARKING 1H MK Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -3.0 A Drain Current-Pulsed IDM -24 A Power Dissipation PD 300 mW RθJA 417 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient www.umw-ic.com 1 Units 友台半导体有限公司 UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Static characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate -source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS =-10V, ID =-4.1A 85 mΩ VGS =-4.5V, ID =-3A 145 mΩ Drain-source on-resistance (note 1) RDS(on) Forward tranconductance (note 1) Gate threshold voltage gFS VGS(th) Diode forward voltage (note 1) VSD -30 VDS =-5V, ID =-4A 5.5 VDS =VGS, ID =-250µA -1 V S IS=-1A,VGS=0V -3 V -1 V Dynamic characteristics (note 2) Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss 75 pF td(on) 8.6 ns VGS=-10V,VDS=-15V, 5.0 ns RL=3.6Ω,RGEN=3Ω 28.2 ns 13.5 ns VDS =-15V,VGS =0V,f =1MHz Switching characteristics (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes: 1. Pulse test: Pulse width ≤300µs, Duty cycle ≤2%. 2. These parameter have no way to verify. www.umw-ic.com 2 友台半导体有限公司 UMW 100 R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V 10 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 1 -2.70V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 10 1 -2.70V 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 100 1 Fig 1. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 10 TJ = 150 ° C 1 TJ = 25 ° C V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 ID = 3.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.umw-ic.com 100 Fig 2. Typical Output Characteristics 100 0.1 2.0 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 4. Normalized On-Resistance Vs. Temperature 3 友台半导体有限公司 UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 800 600 Ciss 400 200 Coss Crss ID = -3.0A VDS = -24V VDS = -15V 16 12 8 4 0 0 1 10 0 100 4 8 12 16 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 ° C 1 10us 10 100us 1ms 1 TJ = 25 ° C 0.1 0.4 10ms TA = 25 ° C TJ = 150 ° C Single Pulse V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0.1 1.8 10 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage www.umw-ic.com 1 -VDS , Drain-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) 4 友台半导体有限公司 UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 3.0 VDS -ID , Drain Current (A) VGS RD D.U.T. RG - 2.0 + VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 10% 150 TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 P DM 0.02 0.01 1 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.umw-ic.com 5 友台半导体有限公司 UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 0.14 R DS (on) , Drain-to-Source On Resistance ( Ω) R DS(on) , Drain-to -Source On Resistance ( Ω ) UMW R 0.13 0.12 0.11 0.10 ID = -3.0A 0.09 0.08 0.07 4.0 6.0 8.0 10.0 12.0 14.0 16.0 0.40 0.30 VGS = -4.5V 0.20 VGS = -10V 0.10 0.00 0 4 -V GS, Gate -to -Source Voltage (V) 8 12 16 -I D , Drain Current (A) Fig 12. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 50KΩ QG QGS 12V .3µF QGD D.U.T. +VDS VGS VG -3mA IG Charge ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform www.umw-ic.com .2µF Fig 13b. Gate Charge Test Circuit 6 友台半导体有限公司 UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 30 20 ID = -250µA Power (W) -V GS(th) , Variace ( V ) 2.5 2.0 10 0 1.5 -75 -50 -25 0 25 50 75 100 125 0.001 150 0.100 1.000 10.000 100.000 Time (sec) T J , Temperature ( °C ) Fig 15. Typical Power Vs. Time Fig 14. Threshold Voltage Vs. Temperature www.umw-ic.com 0.010 7 友台半导体有限公司