PESD12VL1BAF

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PESDxL1BA series Low capacitance bidirectional ESD protection diodes in SOD323 Rev. 02 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. 1.2 Features n n n n Bidirectional ESD protection of one line Max. peak pulse power: Ppp = 500 W Low clamping voltage: V(CL)R = 26 V Ultra low leakage current: IRM < 0.09 µA n n n n ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 18 A Very small SMD plastic package 1.3 Applications n Computers and peripherals n Communication systems n Audio and video equipment n Data lines n CAN bus protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse stand-off voltage Cd Min Typ Max Unit PESD3V3L1BA - - 3.3 V PESD5V0L1BA - - 5.0 V PESD12VL1BA - - 12 V PESD15VL1BA - - 15 V PESD24VL1BA - - 24 V PESD3V3L1BA - 101 - pF PESD5V0L1BA - 75 - pF PESD12VL1BA - 19 - pF PESD15VL1BA - 16 - pF PESD24VL1BA - 11 - pF diode capacitance Conditions VR = 0 V; f = 1 MHz PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 Simplified outline 1 Symbol 2 1 2 sym045 3. Ordering information Table 3. Ordering information Type number Package Name PESDxL1BA series SC-76 Description Version plastic surface mounted package; 2 leads SOD323 4. Marking Table 4. Marking codes Type number Marking code PESD3V3L1BA AB PESD5V0L1BA AC PESD12VL1BA AD PESD15VL1BA AE PESD24VL1BA AF PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 2 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3L1BA - 500 W PESD5V0L1BA - 500 W PESD12VL1BA - 200 W PESD15VL1BA - 200 W - 200 W PESD3V3L1BA - 18 A PESD5V0L1BA - 15 A PESD12VL1BA - 5 A PESD15VL1BA - 5 A PESD24VL1BA - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Ppp Parameter Conditions peak pulse power 8/20 µs [1] PESD24VL1BA peak pulse current Ipp [1] Symbol ESD ESD maximum ratings Parameter Conditions Min Max Unit PESD3V3L1BA - 30 kV PESD5V0L1BA - 30 kV PESD12VL1BA - 30 kV PESD15VL1BA - 30 kV PESD24VL1BA - 23 kV - 10 kV electrostatic discharge capability PESDxL1BA series IEC 61000-4-2 (contact discharge) [1] HBM MIL-Std 883 Device stressed with ten non-repetitive ESD pulses; see Figure 2. Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD); Figure 2 > 15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 > 4 kV PESDXL1BA_SER_2 Product data sheet [1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1. Table 6. [1] 8/20 µs © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 3 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 4 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter VRWM reverse stand-off voltage Conditions Min Typ Max Unit PESD3V3L1BA - - 3.3 V PESD5V0L1BA - - 5.0 V PESD12VL1BA - - 12 V PESD15VL1BA - - 15 V - - 24 V PESD24VL1BA IRM V(BR) reverse leakage current see Figure 7 PESD3V3L1BA VRWM = 3.3 V - 0.09 2 µA PESD5V0L1BA VRWM = 5.0 V - 0.01 1 µA PESD12VL1BA VRWM = 12 V -