TSM3401CX RFG

TSM3401 Taiwan Semiconductor P-Channel Power MOSFET -30V, -3A, 60mΩ KEY PERFORMANCE PARAMETERS Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low Onresistance PARAMETER VALUE UNIT VDS -30 V RDS(on) (max) ● Pb-free plating ● RoHS compliant ● Halogen-free package VGS = -10V 60 VGS = -4.5V 90 Qg 9.52 mΩ nC Application ● Load Switch ● PA Switch SOT-23 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -3 A IDM -10 A IS -1.9 A Continuous Drain Current Pulsed Drain Current (Note 1) TA = 25°C (Note 2) Continuous Source Current (Diode Conduction) Total Power Dissipation TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range PDTOT 1.25 0.8 W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 75 °C/W Junction to Ambient Thermal Resistance RӨJA 100 °C/W THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000072 1 Version: D15 TSM3401 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -30 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1.0 -1.5 -3.0 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V IDSS -- -- -1 µA On-State Drain Current VDS = -5V, VGS = -10V ID(ON) -6 -- -- A -- 50 60 -- 75 90 gfs 4 7 -- Qg -- 9.52 -- Qgs -- 3.43 -- Qgd -- 1.71 -- Ciss -- 551.57 -- Coss -- 90.96 -- Drain-Source On-State Resistance Forward Transconductance Dynamic VGS = -10V, ID = -3A VGS = -4.5V, ID = -2A VDS = -15V, ID = -5A RDS(ON) mΩ S (Note 4) Total Gate Charge VDS = -15V, ID = -3A, Gate-Source Charge VGS = -10V Gate-Drain Charge Input Capacitance VDS = -15V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Switching f = 1.0MHz Crss nC pF 60.79 (Note 5) Turn-On Delay Time VDD = -15V, Turn-On Rise Time RGEN = 6Ω, Turn-Off Delay Time ID = -1A, VGS = -10V, Turn-Off Fall Time Source-Drain Diode td(on) -- 10.8 -- tr -- 2.33 -- td(off) -- 22.53 -- tf -- 3.87 -- VSD -- -0.8 -1.3 ns (Note 3) Forward On Voltage IS = -1.9 A, VGS = 0V V Notes: 1. Pulse width limited by the maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 5 sec. 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS_P0000072 2 Version: D15 TSM3401 Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM3401CX RFG PACKAGE PACKING SOT-23 3,000pcs / 7” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000072 3 Version: D15 TSM3401 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics ID, Drain Current (A) ID, Continuous Drain Current (A) Transfer Characteristics VDS, Drain to Source Voltge(V) VGS, Gate to Source Voltge(V) On-Resistance vs. Drain Current RDS(on), On Resistance (mΩ) -VGS, Gate to Source Voltage (V) Gate Charge Qg, Total Gate Charge (nC) ID, Drain Current(A) Source-Drain Diode Forward Voltage IS, Source Current (A) Normalized On Resistance (mΩ) On-Resistance vs. Junction Temperature VSD, Source to Drain Voltge(V) TJ, Junction Temperature (°C) Document Number: DS_P0000072 4 Version: D15 TSM3401 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) On-Resistance vs. Gate-Source Voltage VGS(th), Variance (V) RDS(on), On Resistance (mΩ) Threshold Voltage TJ, Junction Temperature (°C) VGS, Gate to Source Voltge(V) Power (W) Single Pulse Power Time (sec) ID, Drain Current (A) Normalized Thermal Transient Impedance Curve Square Wave Pulse Duration (s) Document Number: DS_P0000072 5 Version: D15 TSM3401 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-23 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y M L = Year Code = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R S =May T =Jun U =Jul V W =Sep X =Oct Y =Nov Z = Lot Code (1~9, A~Z) Document Number: DS_P0000072 6 =Apr =Aug =Dec Version: D15 TSM3401 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000072 7 Version: D15