C3M0075120D

C3M0075120D VDS 1200 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 A 75 mΩ N-Channel Enhancement Mode Features • • • • • Package C3MTM SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • • • • Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications • • • • Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Ordering Part Number Package Marking TJ , Tstg Range C3M0075120D TO 247-3 C3M0075120D -55 - 150 ˚C C3M0075120D-A TO 247-3 C3M0075120D-A -40 - 175 ˚C Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 1200 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25˚C Fig. 19 ID Continuous Drain Current ID(pulse) PD TJ , Tstg 32 23 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 80 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 136 W TC=25˚C, TJ = 175 ˚C Fig. 20 -40 to +175 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1 8.8 Nm lbf-in Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0075120D Rev. 3, 01-2021 1.6mm (0.063”) from case for 10s M3 or 6-32 screw Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Min. Drain-Source Breakdown Voltage Typ. Max. Unit V VGS = 0 V, ID = 100 μA 2.5 3.6 V VDS = VGS, ID = 5 mA V VDS = VGS, ID = 5 mA, TJ = 175ºC 1200 1.8 Gate Threshold Voltage 2.2 Test Conditions IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 75 90 RDS(on) Drain-Source On-State Resistance 120 12 gfs Transconductance Ciss Input Capacitance Coss Output Capacitance 58 Crss Reverse Transfer Capacitance 2 Eoss Coss Stored Energy 33 EON Turn-On Switching Energy (SiC Diode FWD) 564 EOFF Turn Off Switching Energy (SiC Diode FWD) 186 EON Turn-On Switching Energy (Body Diode FWD) 924 EOFF Turn Off Switching Energy (Body Diode FWD) 162 td(on) Turn-On Delay Time 56 Rise Time 17 Turn-Off Delay Time 32 Fall Time 13 Internal Gate Resistance 9.0 tr td(off) tf RG(int) mΩ S 13 VGS = 15 V, ID = 20 A VGS = 15 V, ID = 20A, TJ = 175ºC VDS= 20 V, IDS= 20 A VDS= 20 V, IDS= 20 A, TJ = 175ºC Note Fig. 11 Fig. 4, 5, 6 Fig. 7 1390 Qgs Gate to Source Charge 17 Qgd Gate to Drain Charge 20 Qg Total Gate Charge 54 pF VGS = 0 V, VDS = 1000 V f = 1 MHz μJ VAC = 25 mV Fig. 17, 18 Fig. 16 μJ VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC Fig. 26, 29 μJ VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC Fig. 26, 29 ns VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 Ω, Timing relative to VDS Inductive load Fig. 27, 28 Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions Note 4.5 V VGS = -4 V, ISD = 10 A 4.0 V VGS = -4 V, ISD = 10 A, TJ = 175 °C A VGS = -4 V, TJ = 25 ˚C Note 1 VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 2800 A/µs, TJ = 150 °C Note 1 Continuous Diode Forward Current 26 Diode pulse Current 80 A trr Reverse Recover time 48 ns Qrr Reverse Recovery Charge 279 nC Irrm Peak Reverse Recovery Current 9 A Fig. 8, 9, 10 Thermal Characteristics Parameter Typ. Max. RθJC Thermal Resistance from Junction to Case 0.97 1.1 RθJA Thermal Resistance From Junction to Ambient Symbol 2 C3M0075120D Rev. 3, 01-2021 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 80 Conditions: TJ = -40 °C tp = < 200 µs VGS = 13V 60 50 VGS = 11V 40 30 20 Conditions: TJ = 25 °C tp = < 200 µs 70 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 70 80 VGS = 15V VGS = 9V 10 VGS = 15V VGS = 13V 60 VGS = 11V 50 40 30 VGS = 9V 20 10 VGS = 7V VGS = 7V 0 0.0 2.0 4.0 6.0 8.0 0 10.0 0.0 2.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -40 ºC 80 1.6 60 VGS = 15V VGS = 13V VGS = 11V 40 VGS = 9V 30 20 VGS = 7V 10 0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 4.0 6.0 8.0 0.0 10.0 Figure 3. Output Characteristics TJ = 175 ºC 180 -50 -25 0 160 TJ = 175 °C 120 100 TJ = -40 °C 80 TJ = 25 °C 60 40 20 0 10 20 30 40 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures C3M0075120D Rev. 3, 01-2021 50 50 75 100 125 150 175 Conditions: IDS = 20 A tp < 200 µs 180 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 200 140 25 Junction Temperature, TJ (°C) Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 µs 160 3 10.0 1.4 Drain-Source Voltage, VDS (V) 0 8.0 Conditions: IDS = 20 A VGS = 15 V tp < 200 µs 1.8 On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 2.0 50 6.0 Figure 2. Output Characteristics TJ = 25 ºC Conditions: TJ = 175 °C tp = < 200 µs 70 4.0 Drain-Source Voltage, VDS (V) 60 140 VGS = 11 V 120 100 VGS = 13 V 80 VGS = 15 V 60 40 20 0 -50 -25 0 25 50 75 100 Junction Temperature, TJ (°C) 125 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 175 Typical Performance 80 60 TJ = 175 °C 50 TJ = 25 °C 40 -8 -6 TJ = -40 °C 30 20 -4 -2 0 0 -10 Drain-Source Current, IDS (A) 70 Drain-Source Current, IDS (A) -10 Conditions: VDS = 20 V tp < 200 µs VGS = -4 V -20 VGS = 0 V -30 VGS = -2 V -40 -50 -60 10 0 0 2 4 6 8 10 12 Conditions: TJ = -40°C tp < 200 µs 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -6 -4 Figure 8. Body Diode Characteristic at -40 ºC -2 0 -10 VGS = -4 V Drain-Source Current, IDS (A) 0 VGS = 0 V -20 VGS = -2 V -30 -40 -50 -10 -8 -6 -4 -2 0 -20 VGS = 0 V -30 VGS = -2 V -40 -50 -60 Conditions: TJ = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -60 Conditions: TJ = 175°C tp < 200 µs -70 -80 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC 4.0 16 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 2.5 2.0 1.5 1.0 0.5 -50 -25 0 25 50 75 100 Junction Temperature TJ (°C) 125 Figure 11. Threshold Voltage vs. Temperature 4 C3M0075120D Rev. 3, 01-2021 -80 150 Conditions: IDS = 20 A IGS = 50 mA VDS = 800 V TJ = 25 °C 12 3.0 0.0 -70 Figure 10. Body Diode Characteristic at 175 ºC Conditons VGS = VDS IDS = 5 mA 3.5 0 -10 VGS = -4 V Drain-Source Current, IDS (A) -8 -80 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -10 -70 175 8 4 0 -4 0 10 20 30 40 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 50 60 Typical Performance -8 -6 -2 -4 0 0 Drain-Source Current, IDS (A) -10 VGS = 0 V -20 VGS = 5 V -30 VGS = 10 V -40 VGS = 15 V -50 -10 -8 -6 -2 -4 0 VGS = 0 V -20 VGS = 5 V -30 VGS = 10 V -40 VGS = 15 V -50 -60 -60 Conditions: TJ = -40 °C tp < 200 µs Conditions: TJ = 25 °C tp < 200 µs -70 -80 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -40 ºC -10 -8 -6 -4 -2 35 -20 -30 -40 -50 30 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) VGS = 0 V VGS = 10 V -60 Conditions: TJ = 175 °C tp < 200 µs Drain-Source Voltage VDS (V) 25 20 15 10 5 -70 0 -80 0 200 Figure 15. 3rd Quadrant Characteristic at 175 ºC 10000 Capacitance (pF) Capacitance (pF) Coss 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C3M0075120D Rev. 3, 01-2021 1000 1000 100 Coss 10 Crss 0 800 Ciss 10 1 600 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 1000 100 400 Drain to Source Voltage, VDS (V) Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 10000 -80 40 0 -10 VGS = 15 V -70 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 VGS = 5 V 0 -10 Drain-Source Current, IDS (A) -10 200 1 Crss 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1000 Typical Performance Drain-Source Continous Current, IDS (DC) (A) 35 140 Conditions: TJ ≤ 175 °C Maximum Dissipated Power, Ptot (W) 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 Case Temperature, TC (°C) 125 150 Conditions: TJ ≤ 175 °C 120 100 80 60 40 20 0 175 Figure 19. Continuous Drain Current Derating vs. Case Temperature -50 -25 0 25 50 75 100 Case Temperature, TC (°C) 125 150 175 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1 0.5 Limited by RDS On Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 100.00 0.3 0.1 100E-3 0.05 0.02 0.01 10E-3 1E-3 SinglePulse 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 10 µs 100 µs 1.00 1 ms 100 ms 0.10 Conditions: TC = 25 °C D = 0, 0.01 1E-6 10 0.1 1 1.6 Switching Loss (mJ) 1.4 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 0 Ω VGS = -4V/+15 V FWD = C3M0075120D L = 157 μH ETotal 2.5 EOn Switching Loss (mJ) 1.8 100 1000 Figure 22. Safe Operating Area 3.0 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 0 Ω VGS = -4V/+15 V FWD = C3M0075120D L = 157 μH 10 Drain-Source Voltage, VDS (V) Figure 21. Transient Thermal Impedance (Junction - Case) 2.0 1 µs 10.00 1.2 1.0 0.8 0.6 EOff 0.4 2.0 ETotal EOn 1.5 1.0 EOff 0.5 0.2 0.0 0 10 20 30 Drain to Source Current, IDS (A) 40 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 C3M0075120D Rev. 3, 01-2021 50 0.0 0 5 10 15 20 25 30 Drain to Source Current, IDS (A) 35 40 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 45 Typical Performance 1.4 1.2 Switching Loss (mJ) 1.6 Conditions: TJ = 25 °C VDD = 800 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0075120D L = 157 μH 1.0 1.2 EOn 0.8 0.6 0.4 EOff 0.2 0.0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Conditions: TJ = 25 °C VDD = 800 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0075120D L = 157 μH Switching Times (ns) 100 80 1.0 ETotal EOn 0.8 ETotal 0.6 EOn 0.4 EOff 0.2 20 25 0.0 EOff 0 25 50 75 100 125 Junction Temperature, TJ (°C) td(on) td(off) 60 tr 40 tf 20 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C3M0075120D Rev. 3, 01-2021 20 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 120 Conditions: IDS = 20 A VDD = 800 V RG(ext) = 0 Ω VGS = -4V/+15 V FWD = C3M0075120D FWD = C4D10120A L = 157 μH 1.4 ETotal Switching Loss (mJ) 1.6 25 Figure 28. Switching Times Definition 175 Test Circuit Schematic Figure 29. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0075120D Rev. 3, 01-2021 Package Dimensions ASE Advanced Semiconductor Engineering Weihai, Inc. Package TO-247-3 T V TITLE: DWG NO. PACKAGE OUTLINE ISSUE O DATE Sep.05, 2016 ASE POS A U 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) W TO-247 3LD, Only For Cree Pinout Information: • • • Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source COMPANY ASE Weihai SHEET 1 OF 3 TO-247-3 C3M0075120D Rev. 3, 01-2021 TITLE: Advanced Semiconductor Engineering Weihai, Inc. Min .190 DWG NO. PACKAGE Millimeters ISSUE Max Min Max OUTLINE DATE Inches .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 Ab A1b1 A2b2 b b3 b1b4 b3 c c DD D1D1 D2D2 E E E1E1 E2 E2 E3 E4E3 e E4 Ne L N L1 L �P L1 Q S ØP T Q WS XT NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. Recommended Solder Pad Layout 9 98WHP03165A 98WHP03165A O Sep.05, 2016 .042 .052 1.07 1.33 4.83 5.21 .190 .205 .075 .095 1.91 2.41 .100 2.29 2.54 .090 .075 .085 1.91 2.16 .085 1.91 2.16 .075 1.07 1.33 .042 .113 .133 2.87 3.38 .052 1.91 2.41 .075 .113 .123 2.87 3.13 .095 2.87 3.38 .113 .133 .022 .027 0.55 0.68 0.55 0.68 .022 .027 .819 .831 20.80 20.80 21.10 .819 21.10 .831 .640 .695 16.25 16.25 17.65 .640 17.65 .695 .037 .049 0.95 1.25 .049 0.95 1.25 .037 15.75 16.13 .620 16.13 .635 .620 .635 15.75 13.10 14.15 .516 14.15 .557 .516 .557 13.10 3.68 5.10 .145 .201 .145 .201 3.68 5.10 1.00 1.90 .039 .075 .039 .075 1.00 1.90 12.38 13.43 .487 .529 .487 .529 12.38 13.43 5.44 BSC .214 BSC 3 BSC 3 .214 5.44 BSC 19.81 3 20.32 .7803 .800 4.10 4.40 .161 .173 .780 .800 19.81 20.32 3.51 3.65 .138 .144 .161 .173 4.10 4.40 5.49 6.00 .216 .236 .138 .144 3.51 3.65 6.04 6.30 .238 .248 .216 .236 6.00 ����������5.49 ��������� 6.04 .238 .248 6.30 ������� 9˚ 9˚ 11˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ TO-247 3LD, Only For Cree COMPANY ASE Weihai SHEET 2 OF 3 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0075120D Rev. 3, 01-2021 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power