C3M0075120D
VDS
1200 V
ID @ 25˚C
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on)
32 A
75 mΩ
N-Channel Enhancement Mode
Features
•
•
•
•
•
Package
C3MTM SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
•
•
•
•
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
•
•
•
•
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Ordering Part
Number
Package
Marking
TJ , Tstg Range
C3M0075120D
TO 247-3
C3M0075120D
-55 - 150 ˚C
C3M0075120D-A
TO 247-3
C3M0075120D-A
-40 - 175 ˚C
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
1200
V
VGS = 0 V, ID = 100 μA
Note
VDSmax
Drain - Source Voltage
VGSmax
Gate - Source Voltage (dynamic)
-8/+19
V
AC (f >1 Hz)
Note: 1
VGSop
Gate - Source Voltage (static)
-4/+15
V
Static
Note: 2
VGS = 15 V, TC = 25˚C
Fig. 19
ID
Continuous Drain Current
ID(pulse)
PD
TJ , Tstg
32
23
A
VGS = 15 V, TC = 100˚C
Pulsed Drain Current
80
A
Pulse width tP limited by Tjmax
Fig. 22
Power Dissipation
136
W
TC=25˚C, TJ = 175 ˚C
Fig. 20
-40 to
+175
˚C
Operating Junction and Storage Temperature
TL
Solder Temperature
260
˚C
Md
Mounting Torque
1
8.8
Nm
lbf-in
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
1
Value
C3M0075120D Rev. 3, 01-2021
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Parameter
Min.
Drain-Source Breakdown Voltage
Typ.
Max.
Unit
V
VGS = 0 V, ID = 100 μA
2.5
3.6
V
VDS = VGS, ID = 5 mA
V
VDS = VGS, ID = 5 mA, TJ = 175ºC
1200
1.8
Gate Threshold Voltage
2.2
Test Conditions
IDSS
Zero Gate Voltage Drain Current
1
100
μA
VDS = 1200 V, VGS = 0 V
IGSS
Gate-Source Leakage Current
10
250
nA
VGS = 15 V, VDS = 0 V
75
90
RDS(on)
Drain-Source On-State Resistance
120
12
gfs
Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
58
Crss
Reverse Transfer Capacitance
2
Eoss
Coss Stored Energy
33
EON
Turn-On Switching Energy (SiC Diode FWD)
564
EOFF
Turn Off Switching Energy (SiC Diode FWD)
186
EON
Turn-On Switching Energy (Body Diode FWD)
924
EOFF
Turn Off Switching Energy (Body Diode FWD)
162
td(on)
Turn-On Delay Time
56
Rise Time
17
Turn-Off Delay Time
32
Fall Time
13
Internal Gate Resistance
9.0
tr
td(off)
tf
RG(int)
mΩ
S
13
VGS = 15 V, ID = 20 A
VGS = 15 V, ID = 20A, TJ = 175ºC
VDS= 20 V, IDS= 20 A
VDS= 20 V, IDS= 20 A, TJ = 175ºC
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
1390
Qgs
Gate to Source Charge
17
Qgd
Gate to Drain Charge
20
Qg
Total Gate Charge
54
pF
VGS = 0 V, VDS = 1000 V
f = 1 MHz
μJ
VAC = 25 mV
Fig. 17,
18
Fig. 16
μJ
VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC
Fig. 26,
29
μJ
VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC
Fig. 26,
29
ns
VDD = 800 V, VGS = -4 V/15 V
ID = 20 A, RG(ext) = 0 Ω,
Timing relative to VDS
Inductive load
Fig. 27,
28
Ω
f = 1 MHz, VAC = 25 mV
nC
VDS = 800 V, VGS = -4 V/15 V
ID = 20 A
Per IEC60747-8-4 pg 21
Fig. 12
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol
VSD
IS
IS, pulse
Parameter
Typ.
Diode Forward Voltage
Max.
Unit
Test Conditions
Note
4.5
V
VGS = -4 V, ISD = 10 A
4.0
V
VGS = -4 V, ISD = 10 A, TJ = 175 °C
A
VGS = -4 V, TJ = 25 ˚C
Note 1
VGS = -4 V, pulse width tP limited by Tjmax
Note 1
VGS = -4 V, ISD = 20 A, VR = 800 V
dif/dt = 2800 A/µs, TJ = 150 °C
Note 1
Continuous Diode Forward Current
26
Diode pulse Current
80
A
trr
Reverse Recover time
48
ns
Qrr
Reverse Recovery Charge
279
nC
Irrm
Peak Reverse Recovery Current
9
A
Fig. 8,
9, 10
Thermal Characteristics
Parameter
Typ.
Max.
RθJC
Thermal Resistance from Junction to Case
0.97
1.1
RθJA
Thermal Resistance From Junction to Ambient
Symbol
2
C3M0075120D Rev. 3, 01-2021
40
Unit
°C/W
Test Conditions
Note
Fig. 21
Typical Performance
80
Conditions:
TJ = -40 °C
tp = < 200 µs
VGS = 13V
60
50
VGS = 11V
40
30
20
Conditions:
TJ = 25 °C
tp = < 200 µs
70
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
70
80
VGS = 15V
VGS = 9V
10
VGS = 15V
VGS = 13V
60
VGS = 11V
50
40
30
VGS = 9V
20
10
VGS = 7V
VGS = 7V
0
0.0
2.0
4.0
6.0
8.0
0
10.0
0.0
2.0
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -40 ºC
80
1.6
60
VGS = 15V
VGS = 13V
VGS = 11V
40
VGS = 9V
30
20
VGS = 7V
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
4.0
6.0
8.0
0.0
10.0
Figure 3. Output Characteristics TJ = 175 ºC
180
-50
-25
0
160
TJ = 175 °C
120
100
TJ = -40 °C
80
TJ = 25 °C
60
40
20
0
10
20
30
40
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
C3M0075120D Rev. 3, 01-2021
50
50
75
100
125
150
175
Conditions:
IDS = 20 A
tp < 200 µs
180
On Resistance, RDS On (mOhms)
On Resistance, RDS On (mOhms)
200
140
25
Junction Temperature, TJ (°C)
Figure 4. Normalized On-Resistance vs. Temperature
Conditions:
VGS = 15 V
tp < 200 µs
160
3
10.0
1.4
Drain-Source Voltage, VDS (V)
0
8.0
Conditions:
IDS = 20 A
VGS = 15 V
tp < 200 µs
1.8
On Resistance, RDS On (P.U.)
Drain-Source Current, IDS (A)
2.0
50
6.0
Figure 2. Output Characteristics TJ = 25 ºC
Conditions:
TJ = 175 °C
tp = < 200 µs
70
4.0
Drain-Source Voltage, VDS (V)
60
140
VGS = 11 V
120
100
VGS = 13 V
80
VGS = 15 V
60
40
20
0
-50
-25
0
25
50
75
100
Junction Temperature, TJ (°C)
125
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
150
175
Typical Performance
80
60
TJ = 175 °C
50
TJ = 25 °C
40
-8
-6
TJ = -40 °C
30
20
-4
-2
0
0
-10
Drain-Source Current, IDS (A)
70
Drain-Source Current, IDS (A)
-10
Conditions:
VDS = 20 V
tp < 200 µs
VGS = -4 V
-20
VGS = 0 V
-30
VGS = -2 V
-40
-50
-60
10
0
0
2
4
6
8
10
12
Conditions:
TJ = -40°C
tp < 200 µs
14
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-6
-4
Figure 8. Body Diode Characteristic at -40 ºC
-2
0
-10
VGS = -4 V
Drain-Source Current, IDS (A)
0
VGS = 0 V
-20
VGS = -2 V
-30
-40
-50
-10
-8
-6
-4
-2
0
-20
VGS = 0 V
-30
VGS = -2 V
-40
-50
-60
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
-60
Conditions:
TJ = 175°C
tp < 200 µs
-70
-80
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
4.0
16
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
2.5
2.0
1.5
1.0
0.5
-50
-25
0
25
50
75
100
Junction Temperature TJ (°C)
125
Figure 11. Threshold Voltage vs. Temperature
4
C3M0075120D Rev. 3, 01-2021
-80
150
Conditions:
IDS = 20 A
IGS = 50 mA
VDS = 800 V
TJ = 25 °C
12
3.0
0.0
-70
Figure 10. Body Diode Characteristic at 175 ºC
Conditons
VGS = VDS
IDS = 5 mA
3.5
0
-10
VGS = -4 V
Drain-Source Current, IDS (A)
-8
-80
Drain-Source Voltage VDS (V)
Gate-Source Voltage, VGS (V)
-10
-70
175
8
4
0
-4
0
10
20
30
40
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
50
60
Typical Performance
-8
-6
-2
-4
0
0
Drain-Source Current, IDS (A)
-10
VGS = 0 V
-20
VGS = 5 V
-30
VGS = 10 V
-40
VGS = 15 V
-50
-10
-8
-6
-2
-4
0
VGS = 0 V
-20
VGS = 5 V
-30
VGS = 10 V
-40
VGS = 15 V
-50
-60
-60
Conditions:
TJ = -40 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
-70
-80
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -40 ºC
-10
-8
-6
-4
-2
35
-20
-30
-40
-50
30
Stored Energy, EOSS (µJ)
Drain-Source Current, IDS (A)
VGS = 0 V
VGS = 10 V
-60
Conditions:
TJ = 175 °C
tp < 200 µs
Drain-Source Voltage VDS (V)
25
20
15
10
5
-70
0
-80
0
200
Figure 15. 3rd Quadrant Characteristic at 175 ºC
10000
Capacitance (pF)
Capacitance (pF)
Coss
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
5
C3M0075120D Rev. 3, 01-2021
1000
1000
100
Coss
10
Crss
0
800
Ciss
10
1
600
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
1000
100
400
Drain to Source Voltage, VDS (V)
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
10000
-80
40
0
-10
VGS = 15 V
-70
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
VGS = 5 V
0
-10
Drain-Source Current, IDS (A)
-10
200
1
Crss
0
200
400
600
Drain-Source Voltage, VDS (V)
800
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
1000
Typical Performance
Drain-Source Continous Current, IDS (DC) (A)
35
140
Conditions:
TJ ≤ 175 °C
Maximum Dissipated Power, Ptot (W)
30
25
20
15
10
5
0
-50
-25
0
25
50
75
100
Case Temperature, TC (°C)
125
150
Conditions:
TJ ≤ 175 °C
120
100
80
60
40
20
0
175
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
-50
-25
0
25
50
75
100
Case Temperature, TC (°C)
125
150
175
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
1
0.5
Limited by RDS On
Drain-Source Current, IDS (A)
Junction To Case Impedance, ZthJC (oC/W)
100.00
0.3
0.1
100E-3
0.05
0.02
0.01
10E-3
1E-3
SinglePulse
10E-6
100E-6
1E-3
10E-3
Time, tp (s)
100E-3
1
10 µs
100 µs
1.00
1 ms
100 ms
0.10
Conditions:
TC = 25 °C
D = 0,
0.01
1E-6
10
0.1
1
1.6
Switching Loss (mJ)
1.4
Conditions:
TJ = 25 °C
VDD = 800 V
RG(ext) = 0 Ω
VGS = -4V/+15 V
FWD = C3M0075120D
L = 157 μH
ETotal
2.5
EOn
Switching Loss (mJ)
1.8
100
1000
Figure 22. Safe Operating Area
3.0
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 0 Ω
VGS = -4V/+15 V
FWD = C3M0075120D
L = 157 μH
10
Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance
(Junction - Case)
2.0
1 µs
10.00
1.2
1.0
0.8
0.6
EOff
0.4
2.0
ETotal
EOn
1.5
1.0
EOff
0.5
0.2
0.0
0
10
20
30
Drain to Source Current, IDS (A)
40
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
6
C3M0075120D Rev. 3, 01-2021
50
0.0
0
5
10
15
20
25
30
Drain to Source Current, IDS (A)
35
40
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
45
Typical Performance
1.4
1.2
Switching Loss (mJ)
1.6
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0075120D
L = 157 μH
1.0
1.2
EOn
0.8
0.6
0.4
EOff
0.2
0.0
0
5
10
15
External Gate Resistor RG(ext) (Ohms)
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0075120D
L = 157 μH
Switching Times (ns)
100
80
1.0
ETotal
EOn
0.8
ETotal
0.6
EOn
0.4
EOff
0.2
20
25
0.0
EOff
0
25
50
75
100
125
Junction Temperature, TJ (°C)
td(on)
td(off)
60
tr
40
tf
20
0
0
5
10
15
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
7
C3M0075120D Rev. 3, 01-2021
20
150
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
120
Conditions:
IDS = 20 A
VDD = 800 V
RG(ext) = 0 Ω
VGS = -4V/+15 V
FWD = C3M0075120D
FWD = C4D10120A
L = 157 μH
1.4
ETotal
Switching Loss (mJ)
1.6
25
Figure 28. Switching Times Definition
175
Test Circuit Schematic
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
8
C3M0075120D Rev. 3, 01-2021
Package Dimensions
ASE
Advanced
Semiconductor
Engineering Weihai, Inc.
Package TO-247-3
T
V
TITLE:
DWG NO.
PACKAGE
OUTLINE
ISSUE
O
DATE
Sep.05, 2016
ASE
POS
A
U
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
W
TO-247 3LD, Only For Cree
Pinout Information:
•
•
•
Pin 1 = Gate
Pin 2, 4 = Drain
Pin 3 = Source
COMPANY
ASE Weihai
SHEET
1 OF 3
TO-247-3
C3M0075120D Rev. 3, 01-2021
TITLE:
Advanced
Semiconductor
Engineering Weihai, Inc.
Min
.190
DWG NO.
PACKAGE Millimeters
ISSUE
Max
Min
Max
OUTLINE
DATE
Inches
.205
4.83
5.21
A1
.090
.100
2.29
2.54
A2
.075
.085
1.91
2.16
Ab
A1b1
A2b2
b b3
b1b4
b3
c
c
DD
D1D1
D2D2
E E
E1E1
E2
E2
E3
E4E3
e E4
Ne
L N
L1 L
�P
L1
Q
S ØP
T Q
WS
XT
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT
OF JEDEC outlines TO-247 AD.
Recommended Solder Pad Layout
9
98WHP03165A
98WHP03165A
O
Sep.05, 2016
.042
.052
1.07
1.33
4.83
5.21
.190
.205
.075
.095
1.91
2.41 .100
2.29
2.54
.090
.075
.085
1.91
2.16 .085
1.91
2.16
.075
1.07
1.33
.042
.113
.133
2.87
3.38 .052
1.91
2.41
.075
.113
.123
2.87
3.13 .095
2.87
3.38
.113
.133
.022
.027
0.55
0.68
0.55
0.68
.022
.027
.819
.831
20.80
20.80
21.10
.819 21.10 .831
.640
.695
16.25
16.25
17.65
.640 17.65 .695
.037
.049
0.95
1.25 .049
0.95
1.25
.037
15.75
16.13
.620 16.13 .635
.620
.635
15.75
13.10
14.15
.516 14.15 .557
.516
.557
13.10
3.68
5.10
.145
.201
.145
.201
3.68
5.10
1.00
1.90
.039
.075
.039
.075
1.00
1.90
12.38
13.43
.487
.529
.487
.529
12.38
13.43
5.44 BSC
.214 BSC
3 BSC
3
.214
5.44 BSC
19.81 3 20.32
.7803
.800
4.10
4.40
.161
.173
.780
.800
19.81
20.32
3.51
3.65
.138
.144
.161
.173
4.10
4.40
5.49
6.00
.216
.236
.138
.144
3.51
3.65
6.04
6.30
.238
.248
.216
.236
6.00
����������5.49
��������� 6.04
.238
.248
6.30
������� 9˚
9˚
11˚
11˚
U
9˚
11˚
9˚
11˚
V
2˚
8˚
2˚
8˚
W
2˚
8˚
2˚
8˚
TO-247 3LD, Only For Cree
COMPANY
ASE Weihai
SHEET
2 OF 3
Notes
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
•
•
•
SPICE Models: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
Copyright © 2021 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
10
C3M0075120D Rev. 3, 01-2021
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.wolfspeed.com/power