C3M0075120K

C3M0075120K VDS 1200 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 A 75 mΩ N-Channel Enhancement Mode Features • • • • • • • Package 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Tab Drain Benefits • • • • • 1 D Drain (Pin 1, TAB) 2 3 4 S S G Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Gate (Pin 4) Driver Source (Pin 3) Applications • • • • Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Power Source (Pin 2) Ordering Part Number Package Marking TJ , Tstg Range C3M0075120K TO 247-4 C3M0075120K -55 - 150 ˚C C3M0075120K-A TO 247-4 C3M0075120K-A -40 - 175 ˚C Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions 1200 V VGS = 0 V, ID = 100 μA Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25˚C Fig. 19 ID ID(pulse) PD TJ , Tstg TL Continuous Drain Current 32 23 A VGS = 15 V, TC = 100˚C Pulsed Drain Current 80 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 136 W TC=25˚C, TJ = 175 ˚C Fig. 20 -40 to +175 ˚C 260 ˚C Operating Junction and Storage Temperature Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0075120K Rev. 5, 01-2021 1.6mm (0.063”) from case for 10s Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 1200 1.8 2.5 3.6 2.2 Unit Test Conditions V VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 5 mA V VDS = VGS, ID = 5 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 75 90 RDS(on) Drain-Source On-State Resistance 120 12 gfs Transconductance Ciss Input Capacitance Coss Output Capacitance 58 Crss Reverse Transfer Capacitance 2 Eoss Coss Stored Energy 33 EON Turn-On Switching Energy (Body Diode FWD) 270 EOFF Turn-Off Switching Energy (Body Diode FWD) 77 td(on) Turn-On Delay Time 30 Rise Time 14 Turn-Off Delay Time 38 Fall Time 10 Internal Gate Resistance 9.0 tr td(off) tf RG(int) mΩ S 13 Note VGS = 15 V, ID = 20 A Fig. 11 Fig. 4, 5, 6 VGS = 15 V, ID = 20A, TJ = 175ºC VDS= 20 V, IDS= 20 A VDS= 20 V, IDS= 20 A, TJ = 175ºC Fig. 7 1390 Qgs Gate to Source Charge 17 Qgd Gate to Drain Charge 18 Qg Total Gate Charge 53 pF Fig. 17, 18 VGS = 0 V, VDS = 1000 V f = 1 MHz μJ VAC = 25 mV Fig. 16 μJ VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0 Ω, L= 156 μH, TJ = 150ºC Fig. 26, 29 ns VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 Ω, Timing relative to VDS Inductive load Fig. 27, 28 Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unles1s otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions Note 4.5 V VGS = -4 V, ISD = 10 A 4.0 V VGS = -4 V, ISD = 10 A, TJ = 175 °C A VGS = -4 V, TJ = 25 ˚C Note 1 VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/µs, TJ = 150 °C Note 1 Continuous Diode Forward Current 26 Diode pulse Current 80 A trr Reverse Recover time 20 ns Qrr Reverse Recovery Charge 254 nC Irrm Peak Reverse Recovery Current 18 A Fig. 8, 9, 10 Thermal Characteristics Symbol 2 Parameter Max. RθJC Thermal Resistance from Junction to Case 1.1 RθJA Thermal Resistance From Junction to Ambient 40 C3M0075120K Rev. 5, 01-2021 Unit °C/W Test Conditions Note Fig. 21 Typical Performance 80 Conditions: TJ = -40 °C tp = < 200 µs VGS = 13V 60 50 VGS = 11V 40 30 20 Conditions: TJ = 25 °C tp = < 200 µs 70 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 70 80 VGS = 15V VGS = 9V VGS = 15V VGS = 13V 60 VGS = 11V 50 40 30 VGS = 9V 20 10 10 VGS = 7V VGS = 7V 0 0.0 2.0 4.0 6.0 8.0 0 10.0 0.0 2.0 4.0 Figure 1. Output Characteristics TJ = -40 ºC 80 1.6 60 VGS = 13V VGS = 15V VGS = 11V 40 VGS = 9V 30 20 VGS = 7V 10 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 4.0 6.0 8.0 0.0 10.0 -50 -25 0 Drain-Source Voltage, VDS (V) Figure 3. Output Characteristics TJ = 175 ºC 180 160 TJ = 175 °C 120 100 TJ = -40 °C 80 TJ = 25 °C 60 40 20 0 10 20 30 40 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 C3M0075120K Rev. 5, 01-2021 50 50 75 100 125 150 175 Conditions: IDS = 20 A tp < 200 µs 180 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 200 140 25 Junction Temperature, TJ (°C) Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 µs 160 0 10.0 Conditions: IDS = 20 A VGS = 15 V tp < 200 µs 1.8 On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 2.0 50 8.0 Figure 2. Output Characteristics TJ = 25 ºC Conditions: TJ = 175 °C tp = < 200 µs 70 6.0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) 60 140 VGS = 11 V 120 100 VGS = 13 V 80 VGS = 15 V 60 40 20 0 -50 -25 0 25 50 75 100 Junction Temperature, TJ (°C) 125 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 175 Typical Performance 80 -10 70 Drain-Source Current, IDS (A) 60 TJ = 175 °C 50 TJ = 25 °C 40 -8 TJ = -40 °C 30 20 -6 -4 -2 0 0 -10 Drain-Source Current, IDS (A) Conditions: VDS = 20 V tp < 200 µs VGS = -4 V -20 VGS = 0 V -30 VGS = -2 V -40 -50 -60 10 0 0 2 4 6 8 10 12 Conditions: TJ = -40°C tp < 200 µs 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -6 -4 Figure 8. Body Diode Characteristic at -40 ºC -2 0 -10 VGS = -4 V Drain-Source Current, IDS (A) 0 VGS = 0 V -20 VGS = -2 V -30 -40 -50 -10 -8 Drain-Source Voltage VDS (V) 4.0 0 -10 -20 VGS = 0 V -30 VGS = -2 V -40 -50 Conditions: TJ = 175°C tp < 200 µs -70 -80 Drain-Source Voltage VDS (V) 16 Gate-Source Voltage, VGS (V) 2.0 1.5 1.0 0.5 0 25 50 75 100 Junction Temperature TJ (°C) 125 Figure 11. Threshold Voltage vs. Temperature C3M0075120K Rev. 5, 01-2021 -80 150 Conditions: IDS = 20 A IGS = 50 mA VDS = 800 V TJ = 25 °C 12 2.5 -25 -70 Figure 10. Body Diode Characteristic at 175 ºC 3.0 -50 0 -60 Conditons VGS = VDS IDS = 5 mA 3.5 Threshold Voltage, Vth (V) -2 VGS = -4 V Figure 9. Body Diode Characteristic at 25 ºC 4 -4 -60 Conditions: TJ = 25°C tp < 200 µs 0.0 -6 Drain-Source Current, IDS (A) -8 -80 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -10 -70 175 8 4 0 -4 0 10 20 30 40 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 50 Typical Performance -8 -6 -2 -4 0 Drain-Source Current, IDS (A) -10 VGS = 0 V -20 VGS = 5 V -30 VGS = 10 V -40 VGS = 15 V -10 0 -50 -8 -6 -4 -2 0 VGS = 0 V -20 VGS = 5 V -30 VGS = 10 V -40 VGS = 15 V -50 -60 -60 Conditions: TJ = -40 °C tp < 200 µs Conditions: TJ = 25 °C tp < 200 µs -70 -80 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -40 ºC -10 -8 -4 -6 -2 35 -20 -30 -40 -50 30 Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) VGS = 0 V VGS = 10 V -60 Conditions: TJ = 175 °C tp < 200 µs Drain-Source Voltage VDS (V) 25 20 15 10 5 -70 0 -80 0 200 Figure 15. 3rd Quadrant Characteristic at 175 ºC 800 10000 1000 Ciss Capacitance (pF) Capacitance (pF) 600 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 1000 Coss 100 400 Drain to Source Voltage, VDS (V) Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 10000 -80 40 0 -10 VGS = 15 V -70 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 VGS = 5 V 0 -10 Drain-Source Current, IDS (A) -10 10 1000 100 Coss 10 Crss 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C3M0075120K Rev. 5, 01-2021 200 1 Crss 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1000 Typical Performance 140 Conditions: TJ ≤ 175 °C 30 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 35 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 Case Temperature, TC (°C) 150 100 80 60 40 20 0 175 Figure 19. Continuous Drain Current Derating vs. Case Temperature Conditions: TJ ≤ 175 °C 120 -50 -25 0 25 50 75 100 125 Case Temperature, TC (°C) 150 175 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1 0.5 Limited by RDS On Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 100.00 0.3 0.1 100E-3 0.05 0.02 0.01 10E-3 1E-3 SinglePulse 10 µs 100 µs 1.00 1 ms 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 100 ms 0.10 0.01 1E-6 10 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 Figure 21. Transient Thermal Impedance (Junction - Case) 500 Switching Loss (µJ) 800 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 0 Ω VGS = -4V/+15 V FWD = C3M0075120K L = 156 μH 400 100 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 0 Ω VGS = -4V/+15 V FWD = C3M0075120K L = 156 μH ETotal 600 EOn 300 200 10 1000 Drain-Source Voltage, VDS (V) Figure 22. Safe Operating Area Switching Loss (µJ) 600 1 µs 10.00 EOff ETotal EOn 400 EOff 200 100 0 0 5 10 15 20 25 30 Drain to Source Current, IDS (A) 35 40 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 C3M0075120K Rev. 5, 01-2021 45 0 0 5 10 15 20 25 30 Drain to Source Current, IDS (A) 35 40 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 45 Typical Performance 800 Switching Loss (µJ) 600 Conditions: TJ = 25 °C VDD = 800 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0075120K L = 156 μH 600 ETotal EOn 400 EOff 200 0 400 ETotal EOn 300 200 EOff 100 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 25 80 Conditions: TJ = 25 °C VDD = 800 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0075120K L = 156 μH 60 0 0 25 50 75 100 Junction Temperature, TJ (°C) 125 td(off) td(on) 40 tr 20 tf 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C3M0075120K Rev. 5, 01-2021 20 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Switching Times (ns) Conditions: IDS = 20 A VDD = 800 V RG(ext) = 0 Ω VGS = -4V/+15 V FWD = C3M0075120K L = 156 μH 500 Switching Loss (µJ) 1000 25 Figure 28. Switching Times Definition 175 Test Circuit Schematic RG L VDC Q1 VGS= - 4 V KS CDC Q2 RG D.U.T KS Figure 29. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0075120K Rev. 5, 01-2021 Package Dimensions Package TO-247-4L 9 C3M0075120K Rev. 5, 01-2021 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED, EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS 10 C3M0075120K Rev. 5, 01-2021 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 11 C3M0075120K Rev. 5, 01-2021 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power