C3M0075120J
VDS
1200 V
ID @ 25˚C
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
30 A
RDS(on)
75 mΩ
N-Channel Enhancement Mode
Features
•
•
•
•
•
•
•
Package
3rd generation SiC MOSFET technology
Low impedance package with driver source pin
7mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
TAB
Drain
Benefits
•
•
•
•
•
1 2 3 4 5
G KS S S S
6
S
7
S
Drain
(TAB)
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Gate
(Pin 1)
Driver
Source
(Pin 2)
Applications
•
•
•
•
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
Marking
C3M0075120J
TO-263-7
C3M0075120J
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
1200
V
VGS = 0 V, ID = 100 μA
Test Conditions
Note
VDSmax
Drain - Source Voltage
VGSmax
Gate - Source Voltage (dynamic)
-8/+19
V
AC (f >1 Hz)
Note: 1
VGSop
Gate - Source Voltage (static)
-4/+15
V
Static
Note: 2
VGS = 15 V, TC = 25˚C
Fig. 19
ID
ID(pulse)
PD
TJ , Tstg
TL
Continuous Drain Current
Pulsed Drain Current
30
19.7
A
VGS = 15 V, TC = 100˚C
80
A
Pulse width tP limited by Tjmax
Fig. 22
Power Dissipation
113.6
W
TC=25˚C, TJ = 150 ˚C
Fig. 20
Operating Junction and Storage Temperature
-55 to
+150
˚C
260
˚C
Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
1
Value
C3M0075120J Rev. B, 07-2019
1.6mm (0.063”) from case for 10s
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Parameter
Min.
Drain-Source Breakdown Voltage
Typ.
Max.
Unit
V
VGS = 0 V, ID = 100 μA
2.5
3.6
V
VDS = VGS, ID = 5 mA
V
VDS = VGS, ID = 5 mA, TJ = 150ºC
1200
1.8
Gate Threshold Voltage
2.2
Test Conditions
IDSS
Zero Gate Voltage Drain Current
1
50
μA
VDS = 1200 V, VGS = 0 V
IGSS
Gate-Source Leakage Current
10
250
nA
VGS = 15 V, VDS = 0 V
75
90
RDS(on)
Drain-Source On-State Resistance
100
12
gfs
Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
58
Crss
Reverse Transfer Capacitance
2
Eoss
Coss Stored Energy
33
EON
Turn-On Switching Energy (Body Diode FWD)
200
EOFF
Turn-Off Switching Energy (Body Diode FWD)
90
td(on)
Turn-On Delay Time
7
Rise Time
15
Turn-Off Delay Time
24
Fall Time
8
tr
td(off)
tf
RG(int)
VGS = 15 V, ID = 20 A
mΩ
Fig. 11
Fig. 4,
5, 6
VGS = 15 V, ID = 20A, TJ = 150ºC
VDS= 20 V, IDS= 20 A
S
13
Note
VDS= 20 V, IDS= 20 A, TJ = 150ºC
Fig. 7
1390
Internal Gate Resistance
9
Qgs
Gate to Source Charge
18
Qgd
Gate to Drain Charge
12
Qg
Total Gate Charge
48
Fig. 17,
18
VGS = 0 V, VDS = 1000 V
pF
f = 1 MHz
VAC = 25 mV
μJ
Fig. 16
μJ
VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 0 Ω, L= 156 μH, TJ = 150ºC
Fig. 26,
29
ns
VDD = 800 V, VGS = -4 V/15 V
ID = 20 A, RG(ext) = 0 Ω,
Timing relative to VDS
Inductive load
Fig. 27,
28, 29
Ω
f = 1 MHz, VAC = 25 mV
nC
VDS = 800 V, VGS = -4 V/15 V
ID = 20 A
Per IEC60747-8-4 pg 21
Fig. 12
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol
VSD
IS
IS, pulse
Parameter
Typ.
Diode Forward Voltage
Max.
Unit
Test Conditions
Note
4.5
V
VGS = -4 V, ISD = 10 A
4.0
V
VGS = -4 V, ISD = 10 A, TJ = 150 °C
A
VGS = -4 V
Note 1
VGS = -4 V, pulse width tP limited by Tjmax
Note 1
VGS = -4 V, ISD = 20 A, VR = 800 V
dif/dt = 1925 A/µs, TJ = 25 °C
Note 1,
Fig. 29
Continuous Diode Forward Current
22.4
Diode pulse Current
80
A
trr
Reverse Recover time
25
ns
Qrr
Reverse Recovery Charge
109
nC
Irrm
Peak Reverse Recovery Current
11
A
Fig. 8,
9, 10
Thermal Characteristics
Symbol
2
Parameter
Max.
RθJC
Thermal Resistance from Junction to Case
1.1
RθJA
Thermal Resistance From Junction to Ambient
40
C3M0075120J Rev. B, 07-2019
Unit
°C/W
Test Conditions
Note
Fig. 21
Typical Performance
80
VGS = 13V
60
50
VGS = 11V
40
30
20
Conditions:
TJ = 25 °C
tp = < 200 µs
70
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
70
80
VGS = 15V
Conditions:
TJ = -55 °C
tp = < 200 µs
VGS = 9V
10
VGS = 15V
VGS = 13V
60
VGS = 11V
50
40
30
VGS = 9V
20
10
VGS = 7V
VGS = 7V
0
2.0
0.0
4.0
8.0
6.0
0
10.0
0.0
2.0
4.0
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
80
1.6
60
VGS = 13V
VGS = 15V
VGS = 11V
40
VGS = 9V
30
20
VGS = 7V
10
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
4.0
6.0
8.0
0.0
10.0
-50
-25
0
Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 ºC
180
160
140
TJ = 150 °C
100
TJ = -55 °C
80
TJ = 25 °C
60
40
20
10
20
30
40
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
140
C3M0075120J Rev. B, 07-2019
50
75
100
125
150
60
VGS = 11 V
120
100
VGS = 13 V
80
VGS = 15 V
60
40
20
0
0
50
Conditions:
IDS = 20 A
tp < 200 µs
180
On Resistance, RDS On (mOhms)
On Resistance, RDS On (mOhms)
200
120
25
Junction Temperature, TJ (°C)
Figure 4. Normalized On-Resistance vs. Temperature
Conditions:
VGS = 15 V
tp < 200 µs
160
0
10.0
Conditions:
IDS = 20 A
VGS = 15 V
tp < 200 µs
1.8
On Resistance, RDS On (P.U.)
Drain-Source Current, IDS (A)
2.0
50
8.0
Figure 2. Output Characteristics TJ = 25 ºC
Conditions:
TJ = 150 °C
tp = < 200 µs
70
6.0
Drain-Source Voltage, VDS (V)
-50
-25
0
25
50
75
Junction Temperature, TJ (°C)
100
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
125
150
Typical Performance
80
60
TJ = 150 °C
50
TJ = 25 °C
40
-8
-6
TJ = -55 °C
30
20
-4
-2
0
0
-10
VGS = -4 V
Drain-Source Current, IDS (A)
70
Drain-Source Current, IDS (A)
-10
Conditions:
VDS = 20 V
tp < 200 µs
-20
VGS = 0 V
-30
VGS = -2 V
-40
-50
-60
10
0
0
2
4
6
8
10
12
Conditions:
TJ = -55°C
tp < 200 µs
14
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-4
-6
Figure 8. Body Diode Characteristic at -55 ºC
-2
0
-10
VGS = -4 V
Drain-Source Current, IDS (A)
0
VGS = 0 V
-20
VGS = -2 V
-30
-40
-50
-60
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
-10
-8
-40
-50
-60
Conditions:
TJ = 150°C
tp < 200 µs
Drain-Source Voltage VDS (V)
16
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
1.5
1.0
0.5
0
25
50
75
Junction Temperature TJ (°C)
100
125
Figure 11. Threshold Voltage vs. Temperature
4
C3M0075120J Rev. B, 07-2019
-70
-80
Conditions:
IDS = 20 A
IGS = 50 mA
VDS = 800 V
TJ = 25 °C
12
2.0
-25
-30
VGS = -2 V
Figure 10. Body Diode Characteristic at 150 ºC
2.5
-50
0
-20
VGS = 0 V
-80
3.0
0.0
0
-10
-70
Conditons
VGS = VDS
IDS = 5 mA
3.5
-2
VGS = -4 V
Figure 9. Body Diode Characteristic at 25 ºC
4.0
-4
-6
Drain-Source Current, IDS (A)
-8
-80
Drain-Source Voltage VDS (V)
Gate-Source Voltage, VGS (V)
-10
-70
150
8
4
0
-4
0
10
20
30
40
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
50
Typical Performance
-6
-4
-2
0
0
-10
VGS = 0 V
-20
VGS = 5 V
-30
VGS = 10 V
-40
VGS = 15 V
-50
-10
-8
-6
-4
-2
0
VGS = 0 V
-20
VGS = 5 V
-30
VGS = 10 V
VGS = 15 V
-60
Conditions:
TJ = 25 °C
tp < 200 µs
-70
-80
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-8
-6
-4
-2
0
-20
Drain-Source Current, IDS (A)
35
-10
VGS = 5 V
-30
VGS = 10 V
-40
VGS = 15 V
-50
30
-60
Conditions:
TJ = 150 °C
tp < 200 µs
25
20
15
10
5
-70
0
-80
Drain-Source Voltage VDS (V)
0
200
Figure 15. 3rd Quadrant Characteristic at 150 ºC
600
800
1000
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
10000
Ciss
Ciss
1000
Capacitance (pF)
Capacitance (pF)
400
Drain to Source Voltage, VDS (V)
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Coss
100
-80
40
0
VGS = 0 V
10000
-70
Figure 14. 3rd Quadrant Characteristic at 25 ºC
Stored Energy, EOSS (µJ)
-10
-40
-50
-60
Conditions:
TJ = -55 °C
tp < 200 µs
0
-10
Drain-Source Current, IDS (A)
-8
Drain-Source Current, IDS (A)
-10
10
1000
100
Coss
10
Crss
1
0
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
5
C3M0075120J Rev. B, 07-2019
200
1
Crss
0
200
400
600
Drain-Source Voltage, VDS (V)
800
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
1000
Typical Performance
120
Conditions:
TJ ≤ 150 °C
30
Maximum Dissipated Power, Ptot (W)
Drain-Source Continous Current, IDS (DC) (A)
35
25
20
15
10
5
0
-55
-30
-5
20
45
70
Case Temperature, TC (°C)
95
120
100
80
60
40
20
0
145
Conditions:
TJ ≤ 150 °C
-55
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
-30
-5
20
45
70
95
Case Temperature, TC (°C)
120
145
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
1
0.5
0.3
0.1
100E-3
0.05
0.02
0.01
10E-3
1E-3
SinglePulse
10.00
10E-6
100E-6
1E-3
10E-3
Time, tp (s)
100E-3
100 µs
1 ms
100 ms
1.00
0.10
0.01
1E-6
1
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.1
1
ETotal
500
300
EOn
200
EOff
100
0
ETotal
400
EOn
300
200
EOff
100
0
10
20
30
Drain to Source Current, IDS (A)
40
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
6
1000
Conditions:
TJ = 25 °C
VDD = 800 V
RG(ext) =0 Ω
VGS = -4V/+15 V
FWD = C3M0075120J
L = 156 μH
600
Switching Loss (µJ)
Switching Loss (µJ)
400
100
Figure 22. Safe Operating Area
700
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 0 Ω
VGS = -4V/+15 V
FWD = C3M0075120J
L = 156 μH
10
Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance
(Junction - Case)
500
10 µs
Limited by RDS On
Drain-Source Current, IDS (A)
Junction To Case Impedance, ZthJC (oC/W)
100.00
C3M0075120J Rev. B, 07-2019
50
0
0
5
10
15
20
25
30
Drain to Source Current, IDS (A)
35
40
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
45
Typical Performance
600
Switching Loss (µJ)
500
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0075120J
L = 156 μH
EOn
400
200
0
5
10
15
External Gate Resistor RG(ext) (Ohms)
20
25
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0075120J
L = 156 μH
70
Switching Times (ns)
60
50
EOn
200
EOff
0
0
25
50
75
100
125
Junction Temperature, TJ (°C)
td(off)
td(on)
40
30
tr
20
tf
10
0
0
5
10
15
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
7
ETotal
C3M0075120J Rev. B, 07-2019
20
150
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
80
300
100
EOff
0
Conditions:
IDS = 20 A
VDD = 800 V
RG(ext) = 0 Ω
VGS = -4V/+15 V
FWD = C3M0075120J
L = 156 μH
400
ETotal
Switching Loss (µJ)
800
25
Figure 28. Switching Times Definition
175
Test Circuit Schematic
RG
L
VDC
Q1
VGS= - 4 V
KS
CDC
Q2
RG
D.U.T
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
8
C3M0075120J Rev. B, 07-2019
Package Dimensions
Package 7L D2PAK
Dim
All Dimensions in Millimeters
Min
typ
Max
4.300
4.435
4.570
A1
0.00
0.125
0.25
b
0.500
0.600
0.700
A
b2
0.600
0.800
1.000
c
0.330
0.490
0.650
C2
1.170
1.285
1.400
D
9.025
9.075
9.125
D1
4.700
4.800
4.900
E
10.130
10.180
10.230
E1
6.500
7.550
8.600
E2
6.778
7.223
7.665
H
15.043
16.178
L
2.324
2.512
2.700
L1
0.968
1.418
1.868
Ø
0˚
4˚
8˚
Ø1
4.5˚
5˚
5.5˚
e
9
C3M0075120J Rev. B, 07-2019
1.27
17.313
Notes
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
•
•
•
SPICE Models: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
Copyright © 2019 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
10
C3M0075120J Rev. B, 07-2019
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.wolfspeed.com/power