C4D20120H

C4D20120H VRRM Silicon Carbide Schottky Diode Z-Rec Rectifier ® 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance    26 A =     99 nC TO-247-2 PIN 1 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters CASE PIN 2 Applications • • • • IF (TC=135˚C) = Package Benefits • • • • • 1200 V Q c Features • • • • • • • = Part Number Package Marking C4D20120H TO-247-2 C4D20120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 54 26 20 A TC=25˚C TC=135˚C TC=156˚C IFRM Repetitive Peak Forward Surge Current 86 56 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 130 104 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 1150 950 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 Power Dissipation 246 106.5 W TC=25˚C TC=110˚C Fig. 4 VR=0-960V Ptot dV/dt Diode dV/dt ruggedness 200 V/ns ∫i2dt i2t value 84.5 54 A2s -55 to +175 ˚C 1 8.8 Nm lbf-in TJ , Tstg Operating Junction and Storage Temperature TO-247 Mounting Torque 1 Value C4D20120H Rev. -, 02-2018 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Fig. 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.5 2.2 1.8 3 V IR Reverse Current 35 65 200 400 QC Total Capacitive Charge C Total Capacitance EC Capacitance Stored Energy Test Conditions Note IF = 20 A TJ=25°C IF = 20 A TJ=175°C Fig. 1 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 99 nC VR = 800 V, IF = 20A di/dt = 200 A/μs TJ = 25°C Fig. 5 1500 93 67 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 28 μJ VR = 800 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance from Junction to Case Typ. Unit Note 0.61 °C/W Fig. 9 Typical Performance 40 1 TJ=-55°C T = 25°C TJ= 75°C J T =125°C TJ =175°C J 35 30 0.9 0.8 0.7 IR (mA) IF (A) 25 20 15 0.6 0.5 0.4 0.3 10 TJ=-55°C TJ= 25°C TJ= 75°C T =125°C 0.2 5 0.1 0 0 1 2 3 VF (V) Figure 1. Forward Characteristics 2 TJ =175°C J C4D20120H Rev. -, 02-2018 4 0 0 500 1000 VR (V) Figure 2. Reverse Characteristics 1500 Typical Performance 280 180 160 240 IF(peak) (A) 120 Duty Duty Duty Duty Duty 200 PTot (W) 10% 20% 30% 50% 70% DC 140 100 80 60 160 120 80 40 40 20 0 0 25 50 75 100 125 150 25 175 50 75 TC ˚C 125 150 175 TC ˚C Figure 4. Power Derating Figure 3. Current Derating 140 1600 120 1400 1200 100 1000 80 C (pF) Qc (nC) 100 60 800 600 40 400 20 200 0 0 0 200 400 600 800 1000 1200 0.1 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D20120H Rev. -, 02-2018 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 50 50.0 10000 10000 45 45.0 40 40.0 1000 1000 30.0 30 IFSM(A) I (A) FSM E (mJ) EC Capacitive Energy (uJ) C 35 35.0 25 25.0 20 20.0 T = 25°C 100 100 J_initial TJ_initial = 110°C 15 15.0 10 10.0 5.05 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 ttp(s) (s) p VR Reverse Voltage (V) VR (V) Thermal Resistance Junction To Case Impedance,(˚C/W) ZthJC (oC/W) Figure 7. Typical Capacitance Stored Energy Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform) 1 0.5 100E-3 0.3 0.1 0.05 10E-3 0.02 0.01 SinglePulse 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C4D20120H Rev. -, 02-2018 100E-3 1 Package Dimensions Package TO-247-2 POS A Inches Millimeters Min Max Min Max .190 .205 4.70 5.31 A1 .087 .102 2.21 2.59 A2 .059 .098 1.50 2.49 1.40 b .039 .055 0.99 b2 .065 .094 1.65 2.39 c .015 .035 0.38 0.89 21.46 D .819 .845 20.80 D1 .515 - 13.08 - D2 .020 .053 0.51 1.35 16.26 E .620 .640 15.49 E1 .530 - 13.46 - E2 .135 .157 3.43 3.99 e .214 ØK .010 L 5.44 0.25 .780 .800 19.81 20.32 L1 - ØP .140 .177 - 4.50 .144 3.56 3.66 ØP1 .278 .291 7.06 7.39 Q .212 .244 5.38 6.20 S W .243 - 6.17 .006 - 0.15 · PIN 1 TECHNOLOGIES, INC. CASE PIN 2 Recommended Solder Pad Layout all units are in inches .4 Part Number Package Marking C4D20120H TO-247-2 C4D20120 TO-247-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D20120H Rev. -, 02-2018 Diode Model Diode Model CSD04060 Vf TfT== VTV+T+If*R If*RT T V -3 V VTT==0.965 + (Tj *J*-1.3*10 ) -3) 0.97+(T -1.40*10 -3 RTT==0.096 + (Tj * 1.06*10 ) -4 0.023+(T J* 2.71*10 ) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D20120H Rev. -, 02-2018 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power