E4D20120G

E4D20120G 900 V ID @ 25˚C 11.5 A Silicon Carbide Schottky Diode E-Series Automotive VDS RDS(on) 280 mΩ Features • • • • • • Package 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits • • • • • • TO-263-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Ideal for Outdoor Environments PIN 1 Applications • • • • • CASE PIN 2 Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Automotive and Traction Power Conversion PV Inverters Part Number Package Marking E4D20120G TO-263-2 E4D20120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Repetitive Peak Reverse Voltage 1200 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 56 27 20 A TC=25˚C TC=135˚C TC=150˚C Fig. 3 Ptot Power Dissipation 250 108 W TC=25˚C TC=110˚C Fig. 4 IFRM Repetitive Peak Forward Surge Current 83 47 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse dV/dt Diode dV/dt ruggedness 250 V/ns TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C VRRM 1 Parameter E4D20120G Rev. 2, 08-2020 Test Conditions VR=0-960V Note Electrical Characteristics Symbol Parameter Typ. Max. VF Forward Voltage 1.5 2.2 1.8 IR Reverse Current 35 65 200 QC Total Capacitive Charge C Total Capacitance EC Capacitance Stored Energy Unit Test Conditions Note V IF = 20 A TJ=25°C IF = 20 A TJ=175°C Fig. 1 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 110 nC VR = 800 V, IF = 20A di/dt = 200 A/μs TJ = 25°C Fig. 5 1474 100 76 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 33 μJ VR = 800 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 0.6 °C/W Fig. 8 Typical Performance 40 1,000 TJ = -55 °C 35 TJ = 25 °C Reverse Leakage Current, IRR (uA) I (μA) TJ = 75 °C 30 TJ = 125 °C 25 TJ = 175 °C 20 15 10 5 700 600 500 TJ = 175 °C 400 TJ = 125 °C 300 TJ = 75 °C 200 TJ = 25 °C TJ = -55 °C 100 0 0 1 2 3 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 800 R Foward Current, IF (A) IF (A) 900 E4D20120G Rev. 2, 08-2020 4 0 0 500 1000 ReverseVVoltage, (V) VR (V) R Figure 2. Reverse Characteristics 1500 Typical Performance 300 200 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 180 160 140 250 200 PTOT Tot (W) (W) IF(peak) (A) 120 P 100 80 150 100 60 40 50 20 0 25 50 75 100 T ˚C T C(°C) 125 150 0 175 25 50 75 C Conditions: TJ = 25 °C 1600 1200 80 60 40 1000 800 600 400 20 200 0 200 400 600 800 ReverseVVoltage, (V) VR (V) R 1000 Figure 5. Recovery Charge vs. Reverse Voltage 3 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 1400 TC ˚C 100 0 150 Figure 4. Power Derating Capacitance C (pF) (pF) c Capacitive Charge, Q (nC) QC (nC) 120 125 C Figure 3. Current Derating 140 100 ˚C TTC(°C) E4D20120G Rev. 2, 08-2020 1200 0 0 1 10 100 ReverseVVoltage, (V) VR (V) R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance o Junction To Case Impedance, ( C/W) Capacitance Stored (mJ) EEnergy, (mJ) EZCthJC C 70 1 60 50 0.5 0.3 100E-3 40 30 10E-3 20 0.1 0.05 0.02 0.01 SinglePulse 10 0 1E-3 0 1E-6 200 10E-6 400 100E-6 600 1E-3 800 10E-3 Reverse Voltage, V t(V) Time, (s) VR (V) 1000 100E-3 1200 1 R p Figure 7. Typical Capacitance Stored Energy Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) 1 0.5 0.3 100E-3 0.1 0.05 0.02 10E-3 0.01 SinglePulse 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 8. Transient Thermal Impedance 4 E4D20120G Rev. 2, 08-2020 100E-3 1 Junction To Case Impedance, ZthJC (oC/W) 1 0.5 0.3 100E-3 0.1 0.05 0.02 0.01 10E-3 SinglePulse 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 Package Dimensions Package TO-263-2 POS Junction To Case Impedance, ZthJC (oC/W) 1 0.5 0.3 100E-3 0.1 0.05 Inches Millimeters Min Max Min Max A 0.17 0.18 4.32 4.57 A1 - 0.01 - 0.25 b 0.028 0.037 0.71 0.94 b2 0.045 0.055 1.15 1.4 c 0.014 0.025 0.356 0.635 c2 0.048 0.055 1.22 1.4 D 0.35 0.37 8.89 9.4 D1 0.255 0.324 6.48 8.23 10.28 E 0.395 0.405 10.04 E1 0.31 0.318 7.88 8.08 e 0.1 BSC. 2.54 BSC. 0.02 10E-3 0.01 SinglePulse 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 L 0.58 0.62 14.73 15.75 L1 0.09 0.11 2.29 2.79 L2 0.045 0.055 1.15 1.39 L3 0.05 0.07 1.27 1.77 q 0° 8° 0° 8° Note: Tab “M” may not be present PIN 1 M CASE PIN 2 Recommended Solder Pad Layout 15.990 8.890 10.668 3.556 1.540 2.540 Tjb May 2015 MX+DI Part Number Package Marking E4D20120G TO-263-2 E4D20120 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 E4D20120G Rev. 2, 08-2020 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • • Wolfspeed E-Series Family: http//wolfspeed.com/E-Series Wolfspeed SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 E4D20120G Rev. 2, 08-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power