LL4148

LL4148 SMALL SIGNAL SWITCHING DIODE REVERSE VOLTAGE: 75 V CURRENT: 0.15 A FEATURES MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case Polarity:Color band denotes cathode 0.4±0.1 to r 3.4 +0.3 -0.1 Weight: Approx 0.031 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS uc Ratings at 25 oC ambient temperature unless otherwise specified MAXIMUM RATINGS Peak reverse voltage V RM Average forw ard rectified current at tamb=25oC and f 50Hz Forw ard surge current at t 1S and TJ =25oC Junction temperature Storage temperature range IFSM Se Pow er dissipaton at tamb =25oC mi IO Half w ave rectification w ith resistive load 75.0 V 100.0 V 150.0 mA 500.00 mA 1) mW nd VR UNITS co Reverse voltage LL4148 Ptot 500.0 TJ 175.0 o C o 35-55--- +175 TSTG C CR O 1) Valid prov ided that electrodes are kept at ambient temperature. ELECTRICAL CHARACTERISTICS JS MI Forw ard voltage @ IF=10mA MIN TYP MAX UNITS VF - - 1.0 V IR IR IR - - 25.0 5.0 50.0 nA Ctot - - 4.0 pF Vfr - - 2.5 V trr - - 4.0 ns 350.01) K/W - - Leakage current at V R=20V at V R=75V 111111111at V R=20V TJ =150oC Capacitance at V F=V R=0V A A Voltage rise w hen sw itching on tested w ith 50mA pulses tp=0,1 S,rise time 30ns, fp=5 to 100KHz Reverse recovery time from IF=10mA V R=6V,RL=100 ,at IR=1mA Thermal resistance junction to ambient Rectification effciency at 100MHz,V RF=2V R JA V 0.45 - 1)Valid prov ided that electrodes are kept at ambient temperature www,jsmsemi.com 第１／２页 LL4148 SMALL SIGNAL SWITCHING DIODE FIG.1 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG.2-- FORWARD CHARACTERISTICS mW mA 3 10 1000 900 800 10 IF 700 O TJ =100 C 600 to r Ptot 2 10 500 O TJ =25 C 400 300 200 -1 nd 10 100 100 -2 175 200℃ T 10 co 0 0 25 uc 1 0 1 2V V F CR O Se mi A JS MI FIG.3-ADMISSIBLE REPETITIVE PEAK FORWORD CURRENT VERSUS PULSE DURATION 100 IFRM I V=tp/T T=1/tp 10 0.1 tp n=0 0.2 1 IFRM T 0.3 0.1 -3 -5 10 10 -2 -1 10 10 1 10S tp www,jsmsemi.com 第２／２页