FDS8447

FDS8447 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.012 at VGS = 10 V 12 0.012 at VGS = 4.5 V 9 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS directive 2002/95/EC Qg (Typ.) 15 nC APPLICATIONS • Synchronous Rectification • POL, IBC - Secondary Side SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Limit 40 ± 20 12 8 12.4a, b 8.8a, b 50 15 11 5 2.1a, b 6 3.8 2.5a, b 1.6a, b - 55 to 150 ID IDM IAS EAS IS PD TJ, Tstg Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 37 17 Maximum 50 21 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. 1 FDS8447 www.VBsemi.tw SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 40 ID = 250 µA mV/°C -6 VGS(th) VDS = VGS , ID = 250 µA 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 1 µA A 50 VGS = 10 V, ID = 12.4 A 0.010 VGS = 4.5 V, ID = 10.8 A 0.012 VDS = 15 V, ID = 12.4 A 56 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 2000 VDS = 20 V, VGS = 0 V, f = 1 MHz td(off) pF 150 VDS = 10 V, VGS = 10 V, ID = 12.4 A VDS = 10 V, VGS = 4.5 V, ID = 12.4 A 33 50 15 23 6.7 f = 1 MHz VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 1.4 2.1 25 40 12 20 25 40 tf 10 15 td(on) 10 15 15 25 30 45 10 15 tr td(off) nC 5.1 td(on) tr 260 VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 30 50 IS = 10 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 30 60 ns 26 52 nC 17.5 12.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 FDS8447 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 10 VGS = 10 V thru 5 V 8 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 4V 10 6 TC = 25 °C 4 TC = 125 °C 2 3V 0 0 0.4 0.8 1.2 1.6 0 0.0 2.0 TC = - 55 °C 0.5 1.0 1.5 2.5 Output Characteristics 3.5 35 40 125 150 Transfer Characteristics 2400 0.024 Ciss 2000 0.019 C - Capacitance (pF) VGS = 4.5 V 0.014 VGS = 10 V 1600 1200 800 0.009 Coss 400 0.004 Crss 0 0 10 20 30 40 50 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 VDS = 20 V ID = 12.4 A 8 1.6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) 2.0 6 4 2 VGS = 10 V ID = 12.4 A 1.4 1.2 1.0 0.8 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge 30 35 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 FDS8447 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 0.030 ID = 12.4 A RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.020 125 °C 0.015 0.010 25 °C 0.005 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 50 ID = 250 µA 2.2 40 30 Power (W) 1.8 1.6 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 600 Limited by RDS(on)* 100 µs 10 I D - Drain Current (A) V GS(th) (V) 2.0 1 ms 1 10 ms 100 ms 1s 10 s 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 4 FDS8447 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 25 5 Power Dissipation (W) I D - Drain Current (A) 20 15 10 5 4 3 2 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 FDS8447 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 68 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 FDS8447 www.VBsemi.tw SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 7 FDS8447 www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) 8 FDS8447 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. 9