JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5×6-8L Plastic-Encapsulate MOSFETS
CJAC13TH06
N-Channel Power MOSFET
V(BR)DSS
RDS(on)TYP
2.2mΩ@10V
60V
3.0mΩ@4.5V
ID
PDFNWB5×6-8L
130A
DESCRIPTION
The CJAC13TH06 uses shielded gate trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in a wide variety of applications
FEATURES
High Power and current handing capability
Good stability and uniformity with high EAS
Load switch
Excellent package for good heat dissipation
High density cell design for ultra low RDS(ON)
Lead free product is acquired
APPLICATIONS
SMPS and general purpose applications
Uninterruptible Power Supply
Hard switched and high frequency circuits
Power management
MARKING
EQUIVALENT CIRCUIT
CJAC13TH06 = Part No.
8
D
7
D
6
D
5
D
Solid dot=Pin1 indicator.
XX= Code.
2
1
S
3
S
4
S
G
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain Current
ID
①
130
Unit
V
A
Pulsed Drain Current
IDM
②
390
Maximum Power Dissipation
PD ①
140
W
250
mJ
62
℃/W
0.89
℃/W
-55~+150
℃
Single Pulsed Avalanche Energy
EAS
③
Thermal Resistance from Junction to Ambient
RθJA
⑥
Thermal Resistance from Junction to Case
RθJC
TJ ,Tstg
Operating Junction and Storage Temperature Range
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①
1
Rev. - 2.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =48V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
VGS(th)
VDS =VGS, ID =250µA
Gate threshold voltage ④
Drain-source on-resistance
Dynamic characteristics
④
RDS(on)
60
V
TJ =25℃
1.0
µA
TJ =125℃
100
µA
±100
nA
1.8
2.5
V
VGS =10V, ID =12A
2.2
3.0
VGS =4.5V, ID =12A
3.0
4.5
1.0
mΩ
④⑤
63.7
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
11.4
Input Capacitance
Ciss
5298
Output Capacitance
Coss
Reverse Transfer Capacitance
SWITCHING PARAMETERS
VDS =30V,VGS =10V,ID =25A
VDS =25V,VGS =0V,f =100kHz
10.3
nC
1635
Crss
74.8
td(on)
21.8
pF
④⑤
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
VGS=10V, VDS=30V, RG=2Ω,
ID=25A
tf
6.3
ns
78.5
27.1
Source-Drain Diode characteristics
Body diode voltage
VSD ④
IS=20A,VGS=0V
1.3
V
Notes:
1.7& ℃ Limited only by maximum temperature allowed.
2.PW≤10μs, Duty cycle≤1%.
3.EAS condition: VDD=30V,VGS=10V,L=0.1mH,Rg=25Ω Starting TJ = 25°℃.
4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
5.Guaranteed by design, not subject to production.
6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃.
www.jscj-elec.com
2
Rev. - 2.0
Typical Characteristics
Output Characteristics
300
VGS=10 V
VDS=5V
Pulsed
VGS=4.5V
Pulsed
VGS= 4V
ID
200
DRAIN CURRENT
ID
(A)
25
(A)
250
DRAIN CURRENT
Transfer Characteristics
30
VGS=3.5V
150
100
20
15
TJ=25℃
10
VGS= 3V
50
5
VGS=2.5V
0
2
0
4
6
DRAIN TO SOURCE VOLTAGE
8
VDS
0
10
(m)
RDS(ON)
6
5
ON-RESISTANCE
(m)
RDS(ON)
7
4
VGS=4.5V
3
VGS=10V
2
Pulsed
ID=12A
8
7
6
TJ=125℃
5
4
TJ=25℃
3
2
1
3
5
10
15
DRAIN CURRENT
20
ID
0
25
3
(A)
4
5
6
7
8
GATE TO SOURCE VOLTAGE
VGS
9
10
(V)
Threshold Voltage
IS —— VSD
2.5
25
Pulsed
2.0
ID=250uA
VTH
(V)
10
1
TJ=25℃
TJ=125℃
THRESHOLD VOLTAGE
IS (A)
4
(V)
9
Pulsed
1
SOURCE CURRENT
3
VGS
10
8
0.1
0.01
1E-3
2
RDS(ON)—— VGS
Ta=25℃
9
ON-RESISTANCE
1
GATE TO SOURCE VOLTAGE
RDS(ON) —— ID
10
0
0
(V)
0
200
400
600
SOURCE TO DRAIN VOLTAGE
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800
1000
1200
VSD (mV)
1.5
1.0
0.5
0.0
25
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
Rev. - 2.0
Typical Characteristics
Maximum Forward Biased Safe Operating Area
1000
IDM
V
DRAIN CURRENT
ID
(A)
10
n@
100
it
m
Li
ed
by
o
ds
10us
R
100us
10
1ms
10ms
DC
1
0.1
BVDSS
1
DRAIN TO SOURCE VOLTAGE
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60
10
VDS
100
(V)
4
Rev. - 2.0
Symbol
A
A3
D
E
D1
E1
D2
E2
k
b
e
L
L1
H
θ
Dimensions In Millimeters
Min.
Max.
0.900
1.000
0.254REF.
4.944
5.096
5.974
6.126
3.910
4.110
3.375
3.575
4.824
4.976
5.674
5.826
1.190
1.390
0.350
0.450
1.270TYP.
0.559
0.711
0.424
0.576
0.574
0.726
10°
12°
Dimensions In Inches
Min.
Max.
0.035
0.039
0.010REF.
0.195
0.201
0.235
0.241
0.154
0.162
0.133
0.141
0.190
0.196
0.223
0.229
0.047
0.055
0.014
0.018
0.050TYP.
0.022
0.028
0.017
0.023
0.023
0.029
10°
12°
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
5
Rev. - 2.0
www.jscj-elec.com
6
Rev. - 2.0
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