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CJAC13TH06

CJAC13TH06

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    PQFNWB8L_5X6mm

  • 描述:

    -

  • 数据手册
  • 价格&库存
CJAC13TH06 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFET V(BR)DSS RDS(on)TYP 2.2mΩ@10V 60V 3.0mΩ@4.5V ID PDFNWB5×6-8L 130A DESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High Power and current handing capability  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Lead free product is acquired APPLICATIONS  SMPS and general purpose applications  Uninterruptible Power Supply  Hard switched and high frequency circuits  Power management MARKING EQUIVALENT CIRCUIT CJAC13TH06 = Part No. 8 D 7 D 6 D 5 D Solid dot=Pin1 indicator. XX= Code. 2 1 S 3 S 4 S G ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID ① 130 Unit V A Pulsed Drain Current IDM ② 390 Maximum Power Dissipation PD ① 140 W 250 mJ 62 ℃/W 0.89 ℃/W -55~+150 ℃ Single Pulsed Avalanche Energy EAS ③ Thermal Resistance from Junction to Ambient RθJA ⑥ Thermal Resistance from Junction to Case RθJC TJ ,Tstg Operating Junction and Storage Temperature Range www.jscj-elec.com ① 1 Rev. - 2.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =48V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage ④ Drain-source on-resistance Dynamic characteristics ④ RDS(on) 60 V TJ =25℃ 1.0 µA TJ =125℃ 100 µA ±100 nA 1.8 2.5 V VGS =10V, ID =12A 2.2 3.0 VGS =4.5V, ID =12A 3.0 4.5 1.0 mΩ ④⑤ 63.7 Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 11.4 Input Capacitance Ciss 5298 Output Capacitance Coss Reverse Transfer Capacitance SWITCHING PARAMETERS VDS =30V,VGS =10V,ID =25A VDS =25V,VGS =0V,f =100kHz 10.3 nC 1635 Crss 74.8 td(on) 21.8 pF ④⑤ Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) VGS=10V, VDS=30V, RG=2Ω, ID=25A tf 6.3 ns 78.5 27.1 Source-Drain Diode characteristics Body diode voltage VSD ④ IS=20A,VGS=0V 1.3 V Notes: 1.7& ℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=30V,VGS=10V,L=0.1mH,Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Output Characteristics 300 VGS=10 V VDS=5V Pulsed VGS=4.5V Pulsed VGS= 4V ID 200 DRAIN CURRENT ID (A) 25 (A) 250 DRAIN CURRENT Transfer Characteristics 30 VGS=3.5V 150 100 20 15 TJ=25℃ 10 VGS= 3V 50 5 VGS=2.5V 0 2 0 4 6 DRAIN TO SOURCE VOLTAGE 8 VDS 0 10 (m) RDS(ON) 6 5 ON-RESISTANCE (m) RDS(ON) 7 4 VGS=4.5V 3 VGS=10V 2 Pulsed ID=12A 8 7 6 TJ=125℃ 5 4 TJ=25℃ 3 2 1 3 5 10 15 DRAIN CURRENT 20 ID 0 25 3 (A) 4 5 6 7 8 GATE TO SOURCE VOLTAGE VGS 9 10 (V) Threshold Voltage IS —— VSD 2.5 25 Pulsed 2.0 ID=250uA VTH (V) 10 1 TJ=25℃ TJ=125℃ THRESHOLD VOLTAGE IS (A) 4 (V) 9 Pulsed 1 SOURCE CURRENT 3 VGS 10 8 0.1 0.01 1E-3 2 RDS(ON)—— VGS Ta=25℃ 9 ON-RESISTANCE 1 GATE TO SOURCE VOLTAGE RDS(ON) —— ID 10 0 0 (V) 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 800 1000 1200 VSD (mV) 1.5 1.0 0.5 0.0 25 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 2.0 Typical Characteristics Maximum Forward Biased Safe Operating Area 1000 IDM V DRAIN CURRENT ID (A) 10 n@ 100 it m Li ed by o ds 10us R 100us 10 1ms 10ms DC 1 0.1 BVDSS 1 DRAIN TO SOURCE VOLTAGE www.jscj-elec.com 60 10 VDS 100 (V) 4 Rev. - 2.0 Symbol A A3 D E D1 E1 D2 E2 k b e L L1 H θ Dimensions In Millimeters Min. Max. 0.900 1.000 0.254REF. 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 1.190 1.390 0.350 0.450 1.270TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Dimensions In Inches Min. Max. 0.035 0.039 0.010REF. 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 0.047 0.055 0.014 0.018 0.050TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 2.0 www.jscj-elec.com 6 Rev. - 2.0
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