JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFN:%5×6-8L Plastic-Encapsulate MOSFETS
CJAC100P03 P-Channel Power
V(BR)DSS
MOSFET
RDS(on)TYP
2.3mΩ@-10V
-30 V
ID
PDFN:%5×6-8L
-100A
3.4mΩ@-4.5V
DESCRIPTION
The CJAC100P03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used
in a wide variety of applications
FEATURES
Battery switch
Good stability and uniformity with high EAS
Load switch
Excellent package for good heat dissipation
High density cell design for ultra low RDS(ON)
Special process technology for high ESD
Fully characterized avalanche voltage and
capability
current
APPLICATIONS
SMPS and general purpose applications
Hard switched and high frequency circuits
Uninterruptible Power Supply
EQUIVALENT CIRCUIT
MARKING
D
CJAC100P03 = Part No.
CJAC
100P03
XX
D
7
8
D
D
5
6
Solid dot = Pin1 indicator
XX = Code
1
2
S
4
3
S
S
G
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
-100
A
IDM
②
-400
A
Single Pulsed Avalanche Energy
EAS
③
100
mJ
Thermal Resistance from Junction to Ambient
RθJA
62.5
℃/W
Thermal Resistance from Junction to Case
RθJC
0.92
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature Range
Tstg
-55 ~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
260
℃
Pulsed Drain Current
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1
①
Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR) DSS
VGS=0V, ID=-250µA
-30
Zero gate voltage drain current
IDSS
VDS=-24V, VGS =0V
-1
µA
Gate-body leakage current
IGSS
VDS=0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS=VGS, ID =-250µA
-1.6
-2.2
V
Static drain-source on-sate resistance
RDS(on)
VGS=-10V, ID =-30A
2.3
3.3
mΩ
VGS=-4.5V, ID =-20A
3.4
5.0
mΩ
VDS=-10V, ID=-3A
20
Off characteristics
Drain-source breakdown voltage
On characteristics
V
④
Forward transconductance
Dynamic characteristics
gFS
-1.2
S
④⑤
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate resistance
Rg
VDS =-25V,VGS =0V,
f =1MHz
f =1MHz
7930
12000
985
1300
505
750
3.2
pF
Ω
④⑤
Switching characteristics
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
146
210
22
44
Qgd
32
64
td(on)
17
34
VGS=-10V, VDS=-24V,
ID=-10A
tr
VDS=-15V,RL=5Ω,
61
120
td(off)
VGS=-10V,RG=5Ω
200
400
113
220
tf
nC
ns
Drain-Source Diode Characteristics
Drain-source diode forward voltage
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD ④
VGS =0V, IS=-10A
-1.0
V
IS
①
-100
A
ISM
②
-400
A
Notes:
1.TC=25℃ Limited only by maximum temperature allowed.
2.PW≤10μs, Duty cycle≤1%.
3.EAS condition: VDD=-20V,VGS=-10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃.
4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
5.Guaranteed by design, not subject to production.
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2
Rev. - 1.0
7\SLFDO&KDUDFWHULVWLFV
Transfer Characteristics
Output Characteristics
-100
-30
Ta=25℃
VGS=-8V,-6V,-4V,-3.5V
VDS=-5V
Pulsed
Pulsed
-25
-80
(A)
ID
ID
(A)
Ta=25℃
DRAIN CURRENT
DRAIN CURRENT
-60
VGS=-3V
-40
-20
-15
-10
-20
-5
VGS=-2.5V
0
0
0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE
-5
VDS
-6
0
-1
(V)
-2
-5
(V)
10
Ta=25℃
Ta=25℃
ID=-30A
Pulsed
4
Pulsed
(m)
(m)
8
RDS(ON)
VGS= -4.5V
RDS(ON)
-4
VGS
RDS(ON)—— VGS
RDS(ON) —— ID
5
3
ON-RESISTANCE
VGS= -10V
ON-RESISTANCE
-3
GATE TO SOURCE VOLTAGE
2
1
6
4
2
0
0
-5
-10
-15
DRAIN CURRENT
-20
ID
-25
0
-30
(A)
-2
-4
IS —— VSD
-130
-100
-6
-8
-10
GATE TO SOURCE VOLTAGE
VGS
-12
-14
-15
(V)
Threshold Voltage
-2.5
Ta=25℃
Ta=25℃
Pulsed
VTH
IS (A)
(V)
Pulsed
-2.0
THRESHOLD VOLTAGE
SOURCE CURRENT
-10
-1
-0.1
-0.1
-1
SOURCE TO DRAIN VOLTAGE
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-1.5
-1.0
-0.5
0.0
25
-2
50
75
JUNCTION TEMPERATURE
VSD (V)
3
100
TJ
125
(℃ )
Rev. - 1.0
Symbol
A
A3
D
E
D1
E1
D2
E2
k
b
e
L
L1
H
θ
Dimensions In Millimeters
Min.
Max.
0.900
1.000
0.254REF.
4.944
5.096
5.974
6.126
3.910
4.110
3.375
3.575
4.824
4.976
5.674
5.826
1.190
1.390
0.350
0.450
1.270TYP.
0.559
0.711
0.424
0.576
0.574
0.726
10°
12°
Dimensions In Inches
Min.
Max.
0.035
0.039
0.010REF.
0.195
0.201
0.235
0.241
0.154
0.162
0.133
0.141
0.190
0.196
0.223
0.229
0.047
0.055
0.014
0.018
0.050TYP.
0.022
0.028
0.017
0.023
0.023
0.029
10°
12°
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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4
Rev. - 1.0
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5
Rev. - 1.0
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