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CJAC100P03

CJAC100P03

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    PDFN8_5X6MM

  • 描述:

    -

  • 数据手册
  • 价格&库存
CJAC100P03 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power V(BR)DSS MOSFET RDS(on)TYP 2.3mΩ@-10V -30 V ID PDFN:%5×6-8L -100A 3.4mΩ@-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  Battery switch  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Special process technology for high ESD  Fully characterized avalanche voltage and capability current APPLICATIONS  SMPS and general purpose applications  Hard switched and high frequency circuits  Uninterruptible Power Supply EQUIVALENT CIRCUIT MARKING D CJAC100P03 = Part No. CJAC 100P03 XX D 7 8 D D 5 6 Solid dot = Pin1 indicator XX = Code 1 2 S 4 3 S S G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -100 A IDM ② -400 A Single Pulsed Avalanche Energy EAS ③ 100 mJ Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W Thermal Resistance from Junction to Case RθJC 0.92 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Pulsed Drain Current www.jscj-elec.com 1 ① Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS=0V, ID=-250µA -30 Zero gate voltage drain current IDSS VDS=-24V, VGS =0V -1 µA Gate-body leakage current IGSS VDS=0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS=VGS, ID =-250µA -1.6 -2.2 V Static drain-source on-sate resistance RDS(on) VGS=-10V, ID =-30A 2.3 3.3 mΩ VGS=-4.5V, ID =-20A 3.4 5.0 mΩ VDS=-10V, ID=-3A 20 Off characteristics Drain-source breakdown voltage On characteristics V ④ Forward transconductance Dynamic characteristics gFS -1.2 S ④⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =-25V,VGS =0V, f =1MHz f =1MHz 7930 12000 985 1300 505 750 3.2 pF Ω ④⑤ Switching characteristics Total gate charge Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time 146 210 22 44 Qgd 32 64 td(on) 17 34 VGS=-10V, VDS=-24V, ID=-10A tr VDS=-15V,RL=5Ω, 61 120 td(off) VGS=-10V,RG=5Ω 200 400 113 220 tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD ④ VGS =0V, IS=-10A -1.0 V IS ① -100 A ISM ② -400 A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=-20V,VGS=-10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics -100 -30 Ta=25℃ VGS=-8V,-6V,-4V,-3.5V VDS=-5V Pulsed Pulsed -25 -80 (A) ID ID (A) Ta=25℃ DRAIN CURRENT DRAIN CURRENT -60 VGS=-3V -40 -20 -15 -10 -20 -5 VGS=-2.5V 0 0 0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE -5 VDS -6 0 -1 (V) -2 -5 (V) 10 Ta=25℃ Ta=25℃ ID=-30A Pulsed 4 Pulsed (m) (m) 8 RDS(ON) VGS= -4.5V RDS(ON) -4 VGS RDS(ON)—— VGS RDS(ON) —— ID 5 3 ON-RESISTANCE VGS= -10V ON-RESISTANCE -3 GATE TO SOURCE VOLTAGE 2 1 6 4 2 0 0 -5 -10 -15 DRAIN CURRENT -20 ID -25 0 -30 (A) -2 -4 IS —— VSD -130 -100 -6 -8 -10 GATE TO SOURCE VOLTAGE VGS -12 -14 -15 (V) Threshold Voltage -2.5 Ta=25℃ Ta=25℃ Pulsed VTH IS (A) (V) Pulsed -2.0 THRESHOLD VOLTAGE SOURCE CURRENT -10 -1 -0.1 -0.1 -1 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1.5 -1.0 -0.5 0.0 25 -2 50 75 JUNCTION TEMPERATURE VSD (V) 3 100 TJ 125 (℃ ) Rev. - 1.0 Symbol A A3 D E D1 E1 D2 E2 k b e L L1 H θ Dimensions In Millimeters Min. Max. 0.900 1.000 0.254REF. 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 1.190 1.390 0.350 0.450 1.270TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Dimensions In Inches Min. Max. 0.035 0.039 0.010REF. 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 0.047 0.055 0.014 0.018 0.050TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 www.jscj-elec.com 5 Rev. - 1.0
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