CJAC100SN08U

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFET V(BR)DSS RDS(on)TYP ID 80 V 3.0mΩ@10V 100A PDFN:%5×6-8L-B DESCRIPTION These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications. FEATURES  Battery switch  Good stability and uniformity with high EAS  Load switch   High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation  LED applications APPLICATIONS   Networking Load Switch EQUIVALENT CIRCUIT MARKING 8 D 7 D 6 D 5 D CJAC100SN08U = Part No. CJAC 100SN08U XX Solid dot=Pin1 indicator. XX=Code. 2 1 S 3 S 4 S G PIN 1 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID ① 100 A Pulsed Drain Current IDM② 300 A Single Pulsed Avalanche Energy EAS③ 500 mJ Power Dissipation PD① 104 W Thermal Resistance from Junction to Ambient RθJA⑥ 62.5 ℃/W Thermal Resistance from Junction to Case RθJC① 1.2 ℃/W -55~+150 ℃ TJ ,Tstg Operating Junction and Storage Temperature Range www.jscj-elec.com 1 Rev. - 1.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit 80 - - V TJ =25℃ - - 1.0 TJ =125℃ - - 100 Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =1mA Zero gate voltage drain current IDSS VDS =64V, VGS =0V Gate-body leakage current IGSS VDS =0V, VGS =±20V - - ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 2.0 2.8 4.0 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =30A - 3.0 3.9 mΩ VGS =6V, ID =30A - 4.0 6.0 mΩ - 3780 - - 1800 - - 25 - - 2.5 - - 60 - - 14 - On characteristics µA ④ Dynamic characteristics ④ ⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =30V,VGS =0V, f =500kHz f =1MHz pF Ω ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd - 14 - Turn-on delay time td(on) - 68 - VDS=40V, VGS=10V, - 82 - RL=2Ω - 168 - - 80 - - - 1.2 V ① - - 100 A ② - - 300 A Turn-on rise time Turn-off delay time Turn-off fall time VGS=10V, VDS=20V, ID=20A tr td(off) tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD IS ISM ④ VGS =0V, IS=10A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=30V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.1 Typical Characteristics Transfer Characteristics Output Characteristics 100 100 TJ=25℃ Pulsed VGS=10V,8V,6V,5V Pulsed (A) 80 (A) 80 DRAIN CURRENT 60 ID VGS=4.5V ID DRAIN CURRENT VDS=17V 40 20 60 TJ=25℃ 40 20 VGS=4V 0 0 1 3 DRAIN TO SOURCE VOLTAGE 0 4 VDS 0 2 (V) 4 6 GATE TO SOURCE VOLTAGE VGS 8 (V) RDS(ON)—— VGS RDS(ON) —— ID 8 12 TJ=25℃ ID=30A Pulsed Pulsed (m) RDS(ON) VGS= 6V ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 10 6 4 VGS= 10V 2 8 TJ=125℃ 6 4 TJ=25℃ 2 0 10 20 30 DRAIN CURRENT 40 ID 0 50 0 (A) 2 4 6 8 GATE TO SOURCE VOLTAGE IS —— VSD 10 VGS Threshold Voltage 4 80 Pulsed (V) 3 VTH 10 TJ=125℃ THRESHOLD VOLTAGE IS (A) Pulsed SOURCE CURRENT 12 (V) TJ=25℃ 1 0.1 1 0.2 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 2 1 0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.1 Typical Characteristics Gate Charge Capacitances 10000 10 VDS=20V Ciss (V) ID =20A f=500kHz Pulsed Coss 8 GATE TO SOURCE VOLTAGE C (pF) VGS 1000 Pulsed CAPACITANCE 100 Crss 10 1 0.1 0.1 1 DRAIN TO SOURCEVOLTAGE 4 2 0 40 10 6 0 10 VDS (V) 20 30 40 50 GATE CHARGE (nC) NORMALIZED TRAISIENT THERMAL IMPENDANCE NORMALIZED THERMAL IMPEDENCE, Zthjc (K/W) 10 In descending order D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 D=TON/T 0.1 TJ,PK=TC+PDM×RθJC 0.01 1E-6 1E-5 1E-4 1E-3 0.01 0.1 SQUARE WAVE PULSE DURATION, tp (sec) MAXIMUM FORWARD BIASED SAFE OPERATING AREA 600 IDM 100 10us DRAIN CURRENT ID (A) n So RD 1us d ite Lim 100us 10 1ms 10ms DC 1 RθJC=1.2℃/W TC=25℃ Single pulse 0.1 0.1 BVdss 1 10 DRAIN TO SOURCE VOLTAGE www.jscj-elec.com 100 VDS 300 (V) 4 Rev. - 1.1 Symbol A A3 D E D1 E1 D2 E2 k b e L L1 H θ www.jscj-elec.com 5 Dimensions In Millimeters Min. Max. 1.100 0.900 0.254REF. 4.800 5.100 5.874 6.126 3.910 4.110 3.375 3.575 4.800 5.000 5.674 5.826 1.625 1.190 0.350 0.450 1.270TYP. 0.550 0.750 0.300 0.700 0.550 0.750 8° 12° Dimensions In Inches Min. Max. 0.043 0.035 0.010REF. 0.201 0.188 0.231 0.241 0.154 0.162 0.133 0.141 0.188 0.197 0.223 0.229 0.047 0.064 0.014 0.018 0.050TYP. 0.030 0.022 0.012 0.028 0.022 0.030 8° 12° Rev. - 1.1 www.jscj-elec.com 5 Rev. - 1.1