CJAC110SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFET RDS(on)TYP V(BR)DSS 100V 4.3mΩ@10V PDFN:%5×6-8L ID 110A DESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High Power and current handing capability  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Lead free product is acquired APPLICATIONS  SMPS and general purpose applications  Uninterruptible Power Supply  Hard switched and high frequency circuits  Power management EQUIVALENT CIRCUIT MARKING D CJAC110SN10 = Part No. CJAC 110SN10 XX 8 D 7 D 6 D 5 Solid dot = Pin1 indicator XX = Code 2 1 S 3 S 4 S G ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current ID ① 110 Unit V A Pulsed Drain Current IDM ② 390 Maximum Power Dissipation PD ⑥ 192 W ③ 320 mJ 0.65 ℃/W 62.5 ℃/W Single Pulsed Avalanche Energy EAS ① Thermal Resistance from Junction to Case RθJC Thermal Resistance from Junction to Ambient RθJA ⑥ Junction Temperature TJ 150 Storage Temperature TSTG -55~ +150 TL 260 Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) www.jscj-elec.com 1 ℃ Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250uA 100 Zero gate voltage drain current IDSS VDS =80V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250uA 3.0 4.0 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =20A 4.3 5.0 mΩ 3907 7500 794 1600 16 32 Off characteristics Drain-source breakdown voltage V On characteristics ④ Dynamic characteristics 2.0 ④⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =45V,VGS =0V, f =100KHz f =1MHz pF Ω 1.9 ④⑤ 66.5 140 15.9 33 Qgd 19.8 40 td(on) 28 60 Total gate charge Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VGS=10V, VDS=50V, ID=22A tr VDS=50V,ID=22A , 7.5 15 td(off) VGS=10V,RG=2.2Ω 82 164 20 40 tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage VSD ④ VGS =0V, IS=25A 1.0 V Continuous drain-source diode forward current IS ① 110 A Pulsed drain-source diode forward current ISM ② 390 A Notes: 1.7& ℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=30V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics 110 90 Pulsed Ta=25℃ 100 VDS=15V Pulsed 80 ID VGS=5.5V DRAIN CURRENT DRAIN CURRENT Ta=25℃ (A) 80 ID (A) VGS=10V,8V,6V 60 40 VGS=5V 60 40 20 20 0 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE 4 VDS 5 0 2 (V) 4 6 8 GATE TO SOURCE VOLTAGE VGS 10 (V) RDS(ON)—— VGS RDS(ON) —— ID 20 10 Ta=25℃ Ta=25℃ Pulsed Pulsed (m) 15 RDS(ON) 6 VGS= 10V ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 8 4 10 ID=20A 5 2 0 0 20 40 60 DRAIN CURRENT 80 ID 100 110 0 (A) 2 4 6 8 10 GATE TO SOURCE VOLTAGE IS —— VSD VGS 12 14 (V) Threshold Voltage 100 5 Ta=25℃ Ta=25℃ Pulsed VTH 4 10 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) Pulsed 1 0.2 0.2 1 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 3 2 1 0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 Typical Characteristics Gate Charge Capacitances 10000 10 VDS=50V Ciss (V) ID =22A GATE TO SOURCE VOLTAGE CAPACITANCE C (pF) f=100KHz Pulsed Crss 100 10 1 0.1 6 4 2 0 1 DRAIN TO SOURCEVOLTAGE www.jscj-elec.com 8 VGS Coss 1000 Pulsed 10 70 0 VDS (V) 20 40 60 70 GATE CHARGE (nC) 4 Rev. - 1.0 Symbol A b c D D1 D2 E E1 E2 e L L1 L2 H I Dimensions In Millimeters Min. Max. 1.17 1.03 0.48 0.34 0.970 0.824 5.40 4.80 4.31 4.11 4.80 5.00 6.15 5.95 5.85 5.65 1.60 1.270 BSC 0.25 0.05 0.38 0.50 0.38 0.50 3.30 3.50 0.18 - Dimensions In Inches Min. Max. 0.0406 0.0461 0.0189 0.0134 0.0324 0.0382 0.2126 0.1890 0.1618 0.1697 0.1969 0.1890 0.2343 0.2421 0.2224 0.2303 0.0630 0.050 BSC 0.0020 0.0098 0.0197 0.0150 0.0150 0.0197 0.1378 0.1299 0.0070 - NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0 www.jscj-elec.com 6 Rev. - 1.0