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CJAC70N03

CJAC70N03

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    PDFN8_5X6MM

  • 描述:

    -

  • 数据手册
  • 价格&库存
CJAC70N03 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L-D Plastic-Encapsulate MOSFETS CJAC70N03 N-Channel Power MOSFET V(BR)DSS ID RDS(on)TYP PDFN:%5×6-8L-D 4.3mΩ@10V 30 V 6.0mΩ@4.5V 70A DESCRIPTION The CJAC70N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  Battery switch  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Special process technology for high ESD  Fully characterized avalanche voltage and capability current APPLICATIONS  SMPS and general purpose applications   Hard switched and high frequency circuits MARKING Uninterruptible Power Supply EQUIVALENT CIRCUIT CJAC70N03 = Part No. CJAC 70N03 XX 8 D 7 D 6 D 5 D Solid dot=Pin1 indicator XX=Code 2 1 S MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter 3 S 4 S G Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID ① 70 A Pulsed Drain Current IDM ② 280 A Single Pulsed Avalanche Energy ③ EAS 420 mJ ① 2.0 W 62.5 ℃/W Continuous Drain Current Power Dissipation PD ⑥ RθJA Thermal Resistance from Junction to Ambient Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ www.jscj-elec.com 1 Rev. - 1.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.4 2.5 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =20A 4.3 5.5 mΩ VGS =4.5V, ID =20A 6.0 9.5 mΩ VDS =10V, ID =20A 24 Off characteristics Drain-source breakdown voltage On characteristics 30 V ④ Forward transconductance Dynamic characteristics gFS 1.0 S ④⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Switching characteristics VDS =15V,VGS =0V, f =1MHz Crss 1980 3960 320 640 240 480 45 90 3 6 pF ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 15 30 Turn-on delay time td(on) 12 24 Turn-on rise time Turn-off delay time Turn-off fall time VGS=10V, VDS=25V, ID=14A tr VDS=15V,RL=0.75Ω, 36 72 td(off) VGS=10V,RG=3Ω 49 98 12 24 tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD ④ VGS =0V, IS=20A 1.2 V IS ① 70 A ISM ② 280 A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=15V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.1 Typical Characteristics Output Characteristics 60 10V Transfer Characteristics 30 VDS=5V Pulsed VGS= 7V Pulsed 50 25 (A) ID 40 DRAIN CURRENT DRAIN CURRENT ID (A) VGS= 5V VGS=4V 30 20 10 20 15 Ta=25℃ 10 5 VGS=2.5V 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE 4 VDS 0 5 0 1 (V) 2 Ta=25℃ 16 (m) (m) Pulsed ID=20A 18 Pulsed 8 7 6 5 RDS(ON) VGS=4.5V ON-RESISTANCE RDS(ON) 4 (V) 20 9 ON-RESISTANCE VGS RDS(ON)—— VGS RDS(ON) —— ID 10 VGS=10V 4 3 2 1 0 3 GATE TO SOURCE VOLTAGE 14 12 10 8 Ta=100℃ 6 4 Ta=25℃ 2 3 5 10 15 DRAIN CURRENT 20 ID 0 25 3 (A) 4 5 6 7 8 GATE TO SOURCE VOLTAGE VGS 9 10 (V) Threshold Voltage IS —— VSD 2.5 Pulsed (V) Ta=100℃ Ta=25℃ 10 1 0.1 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 2.0 VTH 100 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) 1000 800 1000 1200 VSD (mV) 1.5 ID=250uA 1.0 0.5 0.0 25 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.1 PDFN:%5×6-8L-D Symbol A b c D D1 D2 E E1 E2 e L L1 L2 H I Dimensions In Millimeters Min. Max. 1.17 1.03 0.48 0.34 0.970 0.824 5.40 4.80 4.31 4.11 4.80 5.00 6.15 5.95 5.85 5.65 1.60 1.270 BSC 0.25 0.05 0.38 0.50 0.38 0.50 3.30 3.50 0.18 - Dimensions In Inches Min. Max. 0.0406 0.0461 0.0189 0.0134 0.0324 0.0382 0.2126 0.1890 0.1618 0.1697 0.1969 0.1890 0.2343 0.2421 0.2224 0.2303 0.0630 0.050 BSC 0.0020 0.0098 0.0197 0.0150 0.0150 0.0197 0.1378 0.1299 0.0070 - PDFN:%5×6-8L-D NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.1 www.jscj-elec.com 5 Rev. - 1.1
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