JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFN:%5×6-8L Plastic-Encapsulate MOSFETS
CJAC150N03 N-Channel Power
V(BR)DSS
MOSFET
RDS(on)TYP
1.6mΩ@10V
30 V
ID
PDFN:%5×6-8L
150A
2.1mΩ@4.5V
DESCRIPTION
7KH &-$&151 XVHV DGYDQFHG WUHQFK WHFKQRORJ\ DQG GHVLJQ WR
SURYLGH H[FHOOHQW 5'621 ZLWK ORZ JDWH FKDUJH ,W FDQ EH XVHG LQ D
ZLGHYDULHW\RIDSSOLFDWLRQV
FEATURES
%DWWHU\VZLWFK
*RRGVWDELOLW\DQGXQLIRUPLW\ZLWKKLJK($6
/RDGVZLWFK
([FHOOHQWSDFNDJHIRUJRRGKHDWGLVVLSDWLRQ
+LJKGHQVLW\FHOOGHVLJQIRUXOWUDORZ5'621
6SHFLDOSURFHVVWHFKQRORJ\IRUKLJK(6'
)XOO\FKDUDFWHUL]HGDYDODQFKHYROWDJHDQG
FDSDELOLW\
FXUUHQW
APPLICATIONS
6036DQGJHQHUDOSXUSRVHDSSOLFDWLRQV
+DUGVZLWFKHGDQGKLJKIUHTXHQF\FLUFXLWV
EQUIVALENT CIRCUIT
MARKING
&-$&151
CJAC
150N03
XX
8QLQWHUUXSWLEOH3RZHU6XSSO\
3DUW 1R
8
D
7
D
6
D
5
D
6ROLG dot = Pin1 indicator
XX= Code
2
1
S
3
S
4
S
G
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
①
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulsed Avalanche Energy
EAS
Power Dissipation
150
A
②
600
A
③
280
mJ
①
130
W
62.5
℃/W
0.96
℃/W
PD
Thermal Resistance from Junction to Ambient
RθJA
Thermal Resistance from Junction to Case
⑥
RθJC
①
Junction Temperature
TJ
150
℃
Storage Temperature Range
Tstg
-55 ~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
260
℃
www.jscj-elec.com
1
Rev. - 1.1
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR) DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =24V, VGS =0V
1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
1.6
2.5
V
Static drain-source on-sate resistance
RDS(on)
VGS =10V, ID =30A
1.6
2.0
mΩ
VGS =4.5V, ID =15A
2.1
2.7
mΩ
VDS =10V, ID =2A
17
Off characteristics
Drain-source breakdown voltage
On characteristics
30
V
④
Forward transconductance
Dynamic characteristics
gFS
1.2
S
④⑤
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Switching characteristics
VDS =15V,VGS =0V,
f =1MHz
Crss
5400
pF
780
600
④⑤
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
9.5
Turn-on delay time
td(on)
20
Turn-on rise time
Turn-off delay time
Turn-off fall time
VGS=4.5V, VDS=15V,
ID=24A
60
tr
VDS=15V,RL=0.75Ω,
32
td(off)
VGS=10V,RG=1Ω
75
tf
nC
11.1
ns
28
Drain-Source Diode Characteristics
Drain-source diode forward voltage
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD
IS
④
1.0
V
①
150
A
②
600
A
ISM
VGS =0V, IS=10A
Notes:
1.TC=25℃ Limited only by maximum temperature allowed.
2.PW≤10μs, Duty cycle≤1%.
3.EAS condition: VDD=30V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃.
4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
5.Guaranteed by design, not subject to production.
6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃.
www.jscj-elec.com
2
Rev. - 1.1
7\SLFDO&KDUDFWHULVWLFV
Pulsed
VDS=5V
Pulsed
25
ID
VGS=3V
DRAIN CURRENT
80
60
40
20
15
10
5
20
0
Ta=25℃
(A)
100
ID
DRAIN CURRENT
30
VGS=10V,8V,6V,5V,4V
120
(A)
Transfer Characteristics
Output Characteristics
140
VGS=2.5V
0
1
2
3
DRAIN TO SOURCE VOLTAGE
VDS
0
4
0
1
(V)
2
3
4
GATE TO SOURCE VOLTAGE
VGS
5
(V)
RDS(ON)—— VGS
RDS(ON) —— ID
3
20
Ta=25℃
Ta=25℃
Pulsed
Pulsed
(m)
(m)
16
ON-RESISTANCE
RDS(ON)
ON-RESISTANCE
RDS(ON)
VGS= 4.5V
2
VGS= 10V
1
ID=15A
12
ID=30A
8
4
0
0
10
15
20
DRAIN CURRENT
IS
━
ID
25
0
30
(A)
2
4
6
GATE TO SOURCE VOLTAGE
VSD
8
VGS
10
(V)
Threshold Voltage
2.5
Pulsed
1
0.1
0.1
1
SOURCE TO DRAIN VOLTAGE
www.jscj-elec.com
2.0
VTH
Ta=25℃
10
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
100
1.5
1.0
0.5
0.0
25
2
VSD (V)
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃)
Rev. - 1.1
7\SLFDO&KDUDFWHULVWLFV
Maximum Forward Biased Safe Operating Area
Capacitances
1000
10
Pulsed
Vds = 15V
(A)
Drain Current
ID
C (pF)
CAPACITANCE
Coss
Crss
DRAIN TO SOURCEVOLTAGE
VDS (V)
10μs
RDSON limited
100
1ms
10
BVDSS
1
DRAIN TO SOURCE VOLTAGE
4
100us
DC
1
0.1
10
1
www.jscj-elec.com
IDM
Ciss
1
0.1
0.1
TC=25℃
Single pulse
100
10
VDS
(V)
Rev. - 1.1
Symbol
A
A3
D
E
D1
E1
D2
E2
k
b
e
L
L1
H
θ
Dimensions In Millimeters
Min.
Max.
0.900
1.000
0.254REF.
4.944
5.096
5.974
6.126
3.910
4.110
3.375
3.575
4.824
4.976
5.674
5.826
1.190
1.390
0.350
0.450
1.270TYP.
0.559
0.711
0.424
0.576
0.574
0.726
10°
12°
Dimensions In Inches
Min.
Max.
0.035
0.039
0.010REF.
0.195
0.201
0.235
0.241
0.154
0.162
0.133
0.141
0.190
0.196
0.223
0.229
0.047
0.055
0.014
0.018
0.050TYP.
0.022
0.028
0.017
0.023
0.023
0.029
10°
12°
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
5
Rev. - 1.1
www.jscj-elec.com
6
Rev. - 1.1
很抱歉,暂时无法提供与“CJAC150N03”相匹配的价格&库存,您可以联系我们找货
免费人工找货