JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5×6-8L Plastic-Encapsulate MOSFETS
CJAC10H0
N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
PDFNWB5×6-8L
2.0mΩ@4.5V
20 V
2.4mΩ@2.5V
100A
DESCRIPTION
The CJAC10H02 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURES
High density cell design for ultra low RDS(ON)
Excellent package for good heat dissipation
Fully characterized avalanche voltage and
Special process technology for high ESD
current
capability
Good stability and uniformity with high EAS
APPLICATIONS
SMPS and general purpose applications
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
MARKING
D
'
'
EQUIVALENT CIRCUIT
'
D
CJAC10H02 = Part No.
8
D
7
D
D
5
6
Solid dot=Pin1 indicator
CJAC
10H02
XXX
6
S
6
XXX=Code
2
1
S
3
S
4
S
G
*
MAXIMUM RATINGS ( Ta=25ć unless otherwise noted )
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
10
A
Pulsed Drain Current
IDM
40
A
240
mJ
W
Parameter
(1)
Single Pulsed Avalanche Energy
EAS
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature Range
Tstg
-55 ~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
260
℃
(1).EAS condition: VDD=15V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
().
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1
Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR) DSS
VGS = 0V, ID =250µA
20
Zero gate voltage drain current
IDSS
VDS =20V, VGS =0V
1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±12V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
Static drain-source on-sate resistance
RDS(on)
Off characteristics
Drain-source breakdown voltage
V
On characteristics (note1)
Forward transconductance
gFS
0.5
0.7
1.2
V
VGS =4.5V, ID =20A
1.5
2.0
mΩ
VGS =2.5V, ID =15A
2.0
2.4
mΩ
VDS =5V, ID =20A
93
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
5000
VDS =10V,VGS =0V,
f =1MHz
pF
1200
900
Switching characteristics (note 2)
Total gate charge
70
Qg
VDS=10V, VGS=10V,
16
Gate-source charge
Qgs
Gate-drain charge
Qgd
20
Turn-on delay time
td(on)
12
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
ID=20A
VDD=10V, ID=2A,RL=15Ω
13
VGS=10V,RG=2.5Ω
45
tf
nC
ns
32
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD
VGS =0V, IS=20A
1.2
V
IS
100
A
ISM
400
A
Notes:
1.
Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2.
Guaranteed by design, not subject to production.
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2
Rev. - 1.0
Typical Characteristics
Transfer Characteristics
Output Characteristics
120
100
VGS= 4.5V,10V
VDS=5V
Ta=25℃
Pulsed
Pulsed
100
80
(A)
ID
80
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
VGS= 3V
60
40
20
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
VDS
Ta=25℃
40
20
VGS= 1.5V
0
60
0
0.0
5
(V)
0.5
1.0
1.5
GATE TO SOURCE VOLTAGE
VGS
2.0
(V)
RDS(ON)—— VGS
ID
4.0
3.0
Ta=25℃
Pulsed
(m)
RDS(ON)
VGS=4.5V
1.0
3.0
2.5
ON-RESISTANCE
RDS(ON)
VGS=2.5V
2.0
1.5
ON-RESISTANCE
Pulsed
ID=20A
3.5
(m)
2.5
2.0
Ta=100℃
1.5
Ta=25℃
1.0
0.5
0.5
0.0
0
5
10
DRAIN CURRENT
15
ID
0.0
20
0
(A)
2
4
8
VGS
10
(V)
Threshold Voltage
IS —— VSD
20
10
6
GATE TO SOURCE VOLTAGE
1.2
Pulsed
(V)
VTH
1
Ta=25℃
Ta=100℃
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
1.0
0.1
0.01
0.8
ID=250uA
0.6
0.4
0.2
1E-3
0.0
0.2
0.4
0.6
SOURCE TO DRAIN VOLTAGE
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0.8
1.0
0.0
25
1.2
VSD (mV)
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
( ℃)
Rev. - 1.0
Symbol
A
A3
D
E
D1
E1
D2
E2
k
b
e
L
L1
H
θ
Dimensions In Millimeters
Min.
Max.
0.900
1.000
0.254REF.
4.944
5.096
5.974
6.126
3.910
4.110
3.375
3.575
4.824
4.976
5.674
5.826
1.190
1.390
0.350
0.450
1.270TYP.
0.559
0.711
0.424
0.576
0.574
0.726
10°
12°
Dimensions In Inches
Min.
Max.
0.035
0.039
0.010REF.
0.195
0.201
0.235
0.241
0.154
0.162
0.133
0.141
0.190
0.196
0.223
0.229
0.047
0.055
0.014
0.018
0.050TYP.
0.022
0.028
0.017
0.023
0.023
0.029
10°
12°
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
4
Rev. - 1.0
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5
Rev. - 1.0
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