JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFN:%5×6-8L-D Plastic-EncapsulateMOSFETS
CJAC75SN10
N-Channel Power MOSFET
RDS(on)TYP
V(BR)DSS
8.0mΩ@10V
100V
10.5mΩ@4.5V
ID
PDFN:%5×6-8L
75A
DESCRIPTION
The CJAC75SN10 uses SGT technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in
a wide variety of applications .
FEATURES
High Power and current handing capability
Good stability and uniformity with high EAS
Load switch
Excellent package for good heat dissipation
High density cell design for ultra low RDS(ON)
Lead free product is acquired
APPLICATIONS
SMPS and general purpose applications
Uninterruptible Power Supply
Hard switched and high frequency circuits
Power management
EQUIVALENT CIRCUIT
MARKING
CJAC
75SN10
XX
8
CJAC75SN10 = Part
D
7
D
6
D
5
D
No. Solid dot=Pin1
indicator XX=Code
2
1
S
3
S
4
S
G
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
①
Unit
V
Continuous Drain Current
ID
75
Pulsed Drain Current
IDM②
260
Maximum Power Dissipation
PD ①
138.9
W
Avalanche energy*
③
EAS
100
mJ
Thermal Resistance from Junction to Case
⑥
RθJC
0.9
℃/W
Thermal Resistance from Junction to Ambient
⑥
RθJA
62
℃/W
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55~ +150
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1
A
℃
Rev. - 1.1
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Static Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
④
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =100V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
±100
nA
Gate threshold voltage
VGS(th)
VDS =VGS, ID =250µA
1.7
2.5
V
Drain-source on-resistance
RDS(on)
VGS =10V, ID =10A
8.0
10
VGS =4.5V, ID =10A
10.5
16
40
80
8
16
Dynamic characteristics
100
1.0
V
mΩ
④⑤
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
6
12
Input Capacitance
Ciss
1830
3660
Output Capacitance
Coss
357
720
Reverse Transfer Capacitance
Crss
7.15
15
Gate resistance
Rg
VDS =50V,VGS =10V,ID =20A
VDS =50V,VGS =0V,f =100kHz
f =1MHz
nC
pF
Ω
1.3
④⑤
SWITCHING PARAMETERS
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
VGS=10V, VDS=50V, RG=10Ω,
td(off)
ID=20A
tf
8.0
16
5.2
11
44.8
90
5.6
13
ns
Source-Drain Diode characteristics
Body diode voltage
④
VSD
④
Reverse Recovery Time
trr
Reverse Recovery Charge
④
Qrr
IS=20A,VGS=0V
VR=50V, IF=20A,
dIF/dt=500A/µs
1.2
V
42
ns
165
nC
Notes:
1.TC=25℃ Limited only by maximum temperature allowed.
2.PW≤10μs, Duty cycle≤1%.
3.EAS condition: VDD=50V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃.
4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
5.Guaranteed by design, not subject to production.
6.The value of RθJA ,RθJC is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃.
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2
Rev. - 1.1
Typical Characteristics
Output Characteristics
120
VDS=5V
Pulsed
VGS=10V
Pulsed
100
(A)
25
(A)
ID
80
VGS=4.5V
DRAIN CURRENT
ID
DRAIN CURRENT
Transfer Characteristics
30
60
40
V GS= 3.5V
20
20
15
Ta=25℃
10
5
VGS=3.0V
0
0
1
2
3
DRAIN TO SOURCE VOLTAGE
VDS
0
5
Ta=25℃
Pulsed
ID=20A
(m)
16
RDS(ON)
VGS=4.5V
12
10
8
VGS=10V
6
4
14
Ta=100℃
12
10
8
Ta=25℃
6
4
2
3
5
10
15
DRAIN CURRENT
20
ID
0
25
3
(A)
4
5
6
7
8
GATE TO SOURCE VOLTAGE
9
VGS
10
(V)
Threshold Voltage
IS —— VSD
2.5
25
Pulsed
2.0
VTH
(V)
10
1
Ta=100℃
Ta=25℃
THRESHOLD VOLTAGE
IS (A)
8
(V)
18
Pulsed
2
SOURCE CURRENT
6
VGS
RDS(ON)—— VGS
14
0.1
0.01
1E-3
4
20
ON-RESISTANCE
(m)
RDS(ON)
ON-RESISTANCE
2
GATE TO SOURCE VOLTAGE
16
0
0
(V)
RDS(ON) —— ID
20
18
4
0
200
400
600
SOURCE TO DRAIN VOLTAGE
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800
1000
1200
VSD (mV)
1.5
ID=250uA
1.0
0.5
0.0
-50
0
3
100
50
JUNCTION TEMPERATURE
TJ
150
(℃)
Rev. - 1.1
PDFN:%5×6-8L-D
Symbol
A
b
c
D
D1
D2
E
E1
E2
e
L
L1
L2
H
I
Dimensions In Millimeters
Min.
Max.
1.17
1.03
0.48
0.34
0.970
0.824
5.40
4.80
4.31
4.11
4.80
5.00
6.15
5.95
5.85
5.65
1.60
1.270 BSC
0.25
0.05
0.38
0.50
0.38
0.50
3.30
3.50
0.18
-
Dimensions In Inches
Min.
Max.
0.0406
0.0461
0.0189
0.0134
0.0324
0.0382
0.2126
0.1890
0.1618
0.1697
0.1969
0.1890
0.2343
0.2421
0.2224
0.2303
0.0630
0.050 BSC
0.0020
0.0098
0.0197
0.0150
0.0150
0.0197
0.1378
0.1299
0.0070
-
PDFN:%5×6-8L-D
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
4
Rev. - 1.1
www.jscj-elec.com
5
Rev. - 1.1
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