CJAC100SN08

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC100SN08 N-Channel Power V(BR)DSS MOSFET ID RDS(on)TYP 2.9mΩ@10V 80V PDFN:%5×6-8L 100A 4.3mΩ@4.5V DESCRIPTION The CJAC100SN08 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  Battery switch  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Special process technology for high ESD  Fully characterized avalanche voltage and capability current APPLICATIONS  SMPS and general purpose applications  Hard switched and high frequency circuits  Uninterruptible Power Supply EQUIVALENT CIRCUIT MARKING CJAC100SN08 = Part No. CJAC 100SN08 XX 8 D 7 D 6 D 5 D Solid dot = Pin1 indicator XX = Code 2 1 PIN 1 S 3 S 4 S G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS +20/-12 V Continuous Drain Current ID Pulsed Drain Current IDM Single Pulsed Avalanche Energy 100 A ② 400 A ③ 245 mJ PD① 142 W 62 ℃/W 0.88 ℃/W EAS Power Dissipation ① Thermal Resistance from Junction to Ambient RθJA ⑥ Thermal Resistance from Junction to Case RθJC ① Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =80V, VGS =0V Gate-body leakage current IGSS VDS =0V, VGS =+20/-12 Min Typ Max Unit Off characteristics Drain-source breakdown voltage 80 V 1 µA ±100 nA 1.5 2.5 V VGS =10V, ID =20A 2.9 3.9 mΩ VGS =4.5V, ID =10A 4.3 6.2 mΩ VDS =10V, ID =5A 18 On characteristics ④ Gate-threshold voltage VGS(th) Static drain-source on-sate resistance RDS(on) Forward transconductance gFS VDS =VGS, ID =250µA 1.0 S Dynamic characteristics ④ ⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =25V,VGS =0V, f =1MHz f =1MHz 5310 10200 1870 2700 40 80 1.6 pF Ω ④⑤ 102 132 10 15 Qgd 28 32 td(on) 20 40 Total gate charge Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VGS=10V, VDS=64V, ID=10A tr VDS=40V,ID=1A 13 26 td(off) VGS=10V,RG=6Ω 36 72 18 36 tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD IS ④ 1.0 V ① 100 A ② 400 A ISM VGS =0V, IS=10A Notes: 1.7& ℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=30V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV VDS=5V Pulsed VGS=10V,7V,6V,5V,4V Pulsed 25 ID VGS=3.5V DRAIN CURRENT 80 60 40 VGS=3V 20 15 10 5 20 0 Ta=25℃ (A) 100 ID (A) 30 Ta=25℃ 120 DRAIN CURRENT Transfer Characteristics Output Characteristics 140 0 2 4 DRAIN TO SOURCE VOLTAGE 0 6 VDS 0 (V) 1 2 3 4 GATE TO SOURCE VOLTAGE VGS RDS(ON)—— VGS RDS(ON) —— ID 6 30 Ta=25℃ Ta=25℃ (m) RDS(ON) 5 VGS= 4.5V 4 3 ON-RESISTANCE ON-RESISTANCE Pulsed 25 RDS(ON) (m) Pulsed VGS= 10V ID=10A 15 10 0 5 130 100 20 40 DRAIN CURRENT ID=20A 20 5 2 60 ID 80 (A) 100 0 2 4 6 8 GATE TO SOURCE VOLTAGE IS —— VSD VGS Threshold Voltage 2.5 Ta=25℃ Ta=25℃ (V) 2.0 VTH THRESHOLD VOLTAGE IS (A) Pulsed 10 1 0.1 0.1 1 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 10 (V) Pulsed SOURCE CURRENT 5 (V) 1.5 1.0 0.5 0.0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV 10000 Pulsed Gate Charge Capacitances 10 (V) 100 10 0.1 1 DRAIN TO SOURCEVOLTAGE www.jscj-elec.com Pulsed VGS Crss GATE TO SOURCE VOLTAGE CAPACITANCE C (pF) Coss 1000 VDS=64V 9 Ciss 10 30 VDS (V) 6 3 0 0 20 40 60 80 100 GATE CHARGE （nC） 4 Rev. - 1.0 Symbol A A3 D E D1 E1 D2 E2 k b e L L1 H θ Dimensions In Millimeters Min. Max. 0.900 1.000 0.254REF. 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 1.190 1.390 0.350 0.450 1.270TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Dimensions In Inches Min. Max. 0.035 0.039 0.010REF. 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 0.047 0.055 0.014 0.018 0.050TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0 www.jscj-elec.com 6 Rev. - 1.0