JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5×6-8L Plastic-Encapsulate MOSFETS
CJAC90SN12 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
120V
6.8mΩ@10V
90A
PDFNWB5×6-8L
DESCRIPTION
The CJAC90SN12 uses shielded gate trench technology and
design to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications
FEATURES
High Power and current handing capability
Good stability and uniformity with high EAS
Load switch
Excellent package for good heat dissipation
High density cell design for ultra low RDS(ON)
Lead free product is acquired
APPLICATIONS
SMPS and general purpose applications
Uninterruptible Power Supply
Hard switched and high frequency circuits
Power management
EQUIVALENT CIRCUIT
MARKING
8
CJAC90SN12 = Part No.
D
7
D
6
D
5
D
Solid dot=Pin1 indicator
CJAC
90SN12
XX=Code
XX
2
1
S
3
S
4
S
G
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
120
Gate-Source Voltage
VGS
±20
ID
90
IDM
360
Maximum Power Dissipation(2)
PD
2
W
Avalanche energy*
EAS
500
mJ
RθJC
0.85
℃/W
RθJA
62.5
℃/W
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55~ +150
Continuous Drain Current
Pulsed Drain Current
(1)
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
Tc=25 ℃
(3)
Unit
V
A
℃
* EAS test condition VDD=50V, VGS=10V, RG=25 Ω, L=0.5 mH, starting Tj=25 ℃.
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1
Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =120V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
±100
nA
VGS(th)
VDS =VGS, ID =250µA
3.0
4.0
V
RDS(on)
VGS =10V, ID =20A
5.4
6.8
mΩ
Gate threshold voltage
(1)
Drain-source on-resistance
(1)
Gate resistance
120
2.0
V
RG
3.2
Total gate charge
Qg
45.2
Gate-source charge
Qgs
Gate-drain charge
Qgd
6.7
Input Capacitance
Ciss
3670
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
7.6
td(on)
16
Dynamic characteristics
Ω
(4)
SWITCHING PARAMETERS
VDS =60V,VGS =10V,ID =20A
VDS =60V,VGS =0V,f =1MHz
13.5
nC
472
pF
(4)
Turn-on delay time
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
Source-Drain Diode characteristics
VGS=10V, VDS=60V,
RG=10Ω, ID=20A
tf
9
ns
27
12
(1)
Body diode voltage
VSD
Reverse recovery time
Trr
Reverse recovery charge
Qrr
IS=10A,VGS=0V
VR=60V,IF=20A,diF/dt=500A/µs
1.2
V
50
ns
300
nC
Notes:
1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Mounted on a glass epoxy board of 25.4mm x 25.4mm x 0.8mm.
3. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air
environment with Ta=25 ℃.
4. Guaranteed by design, not subject to production testing.
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2
Rev. - 1.0
Typical Characteristics
Output Characteristics
120
Transfer Characteristics
90
Pulsed
VDS=20V
Ta=25℃
70
(A)
90
60
DRAIN CURRENT
ID
VGS=5.0V
ID
(A)
VGS=10V, 8V, 6V
DRAIN CURRENT
Pulsed
Ta=25℃
80
60
50
40
Ta=25℃
30
30
20
VGS=4.5V
10
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
RDS(ON) -
VDS
0
5
0
2
(V)
4
6
GATE TO SOURCE VOLTAGE
VGS
8
(V)
RDS(ON) - VGS
ID
20
10
Ta=25℃
Pulsed
ID=20A
Pulsed
(m)
ON-RESISTANCE
ON-RESISTANCE
6
VGS=10V
4
2
0
15
RDS(ON)
RDS(ON)
(m)
8
0
10
20
30
40
50
DRAIN CURRENT
IS -
60
ID
70
80
10
5
0
90
0
(A)
2
4
6
GATE TO SOURCE VOLTAGE
8
VGS
10
(V)
Threshold Voltage
VSD
100
4
Pulsed
(V)
1
0.1
0.0
3
VTH
10
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
Ta=25℃
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
ID=250uA
2
1
0
25
1.2
50
75
100
125
JUNCTION TEMPERATURE TJ (℃)
VSD (V)
3
Rev. - 1.0
Typical Characteristics
Gate Charge
Capacitances
10000
12
Pulsed
ID = 20A
VDS = 60V
VGS
GATE TO SOURCE VOLTAGE
CAPACITANCE
C (pF)
1000
(V)
Ciss
f = 1MHz
Coss
100
10
Crss
1
0
20
40
60
DRAIN TO SOURCEVOLTAGE
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80
9
6
3
0
100
VDS (V)
0
10
20
GATE CHARGE
4
30
40
50
Qg (nC)
Rev. - 1.0
Symbol
A
A3
D
E
D1
E1
D2
E2
k
b
e
L
L1
H
θ
Dimensions In Millimeters
Min.
Max.
0.900
1.000
0.254REF.
4.944
5.096
5.974
6.126
3.910
4.110
3.375
3.575
4.824
4.976
5.674
5.826
1.190
1.390
0.350
0.450
1.270TYP.
0.559
0.711
0.424
0.576
0.574
0.726
10°
12°
Dimensions In Inches
Min.
Max.
0.035
0.039
0.010REF.
0.195
0.201
0.235
0.241
0.154
0.162
0.133
0.141
0.190
0.196
0.223
0.229
0.047
0.055
0.014
0.018
0.050TYP.
0.022
0.028
0.017
0.023
0.023
0.029
12°
10°
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
5
Rev. - 1.0
www.jscj-elec.com
6
Rev. - 1.0
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