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CJAC90SN12

CJAC90SN12

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    PDFN8_5X6MM

  • 描述:

    -

  • 数据手册
  • 价格&库存
CJAC90SN12 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L Plastic-Encapsulate MOSFETS CJAC90SN12 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 120V 6.8mΩ@10V 90A PDFNWB5×6-8L DESCRIPTION The CJAC90SN12 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High Power and current handing capability  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Lead free product is acquired APPLICATIONS  SMPS and general purpose applications  Uninterruptible Power Supply  Hard switched and high frequency circuits  Power management EQUIVALENT CIRCUIT MARKING 8 CJAC90SN12 = Part No. D 7 D 6 D 5 D Solid dot=Pin1 indicator CJAC 90SN12 XX=Code XX 2 1 S 3 S 4 S G ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 120 Gate-Source Voltage VGS ±20 ID 90 IDM 360 Maximum Power Dissipation(2) PD 2 W Avalanche energy* EAS 500 mJ RθJC 0.85 ℃/W RθJA 62.5 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -55~ +150 Continuous Drain Current Pulsed Drain Current (1) Thermal Resistance from Junction to Case Thermal Resistance from Junction to Ambient Tc=25 ℃ (3) Unit V A ℃ * EAS test condition VDD=50V, VGS=10V, RG=25 Ω, L=0.5 mH, starting Tj=25 ℃. www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =120V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =250µA 3.0 4.0 V RDS(on) VGS =10V, ID =20A 5.4 6.8 mΩ Gate threshold voltage (1) Drain-source on-resistance (1) Gate resistance 120 2.0 V RG 3.2 Total gate charge Qg 45.2 Gate-source charge Qgs Gate-drain charge Qgd 6.7 Input Capacitance Ciss 3670 Output Capacitance Coss Reverse Transfer Capacitance Crss 7.6 td(on) 16 Dynamic characteristics Ω (4) SWITCHING PARAMETERS VDS =60V,VGS =10V,ID =20A VDS =60V,VGS =0V,f =1MHz 13.5 nC 472 pF (4) Turn-on delay time Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time Source-Drain Diode characteristics VGS=10V, VDS=60V, RG=10Ω, ID=20A tf 9 ns 27 12 (1) Body diode voltage VSD Reverse recovery time Trr Reverse recovery charge Qrr IS=10A,VGS=0V VR=60V,IF=20A,diF/dt=500A/µs 1.2 V 50 ns 300 nC Notes: 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%. 2. Mounted on a glass epoxy board of 25.4mm x 25.4mm x 0.8mm. 3. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 4. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics 120 Transfer Characteristics 90 Pulsed VDS=20V Ta=25℃ 70 (A) 90 60 DRAIN CURRENT ID VGS=5.0V ID (A) VGS=10V, 8V, 6V DRAIN CURRENT Pulsed Ta=25℃ 80 60 50 40 Ta=25℃ 30 30 20 VGS=4.5V 10 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) - VDS 0 5 0 2 (V) 4 6 GATE TO SOURCE VOLTAGE VGS 8 (V) RDS(ON) - VGS ID 20 10 Ta=25℃ Pulsed ID=20A Pulsed (m) ON-RESISTANCE ON-RESISTANCE 6 VGS=10V 4 2 0 15 RDS(ON) RDS(ON) (m) 8 0 10 20 30 40 50 DRAIN CURRENT IS - 60 ID 70 80 10 5 0 90 0 (A) 2 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) Threshold Voltage VSD 100 4 Pulsed (V) 1 0.1 0.0 3 VTH 10 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) Ta=25℃ 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 ID=250uA 2 1 0 25 1.2 50 75 100 125 JUNCTION TEMPERATURE TJ (℃) VSD (V) 3 Rev. - 1.0 Typical Characteristics Gate Charge Capacitances 10000 12 Pulsed ID = 20A VDS = 60V VGS GATE TO SOURCE VOLTAGE CAPACITANCE C (pF) 1000 (V) Ciss f = 1MHz Coss 100 10 Crss 1 0 20 40 60 DRAIN TO SOURCEVOLTAGE www.jscj-elec.com 80 9 6 3 0 100 VDS (V) 0 10 20 GATE CHARGE 4 30 40 50 Qg (nC) Rev. - 1.0 Symbol A A3 D E D1 E1 D2 E2 k b e L L1 H θ Dimensions In Millimeters Min. Max. 0.900 1.000 0.254REF. 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 1.190 1.390 0.350 0.450 1.270TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Dimensions In Inches Min. Max. 0.035 0.039 0.010REF. 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 0.047 0.055 0.014 0.018 0.050TYP. 0.022 0.028 0.017 0.023 0.023 0.029 12° 10° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0 www.jscj-elec.com 6 Rev. - 1.0
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