MMBT5551M3T5G

MMBT5551M3 NPN High Voltage Transistor The MMBT5551M3 device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose high voltage applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. www.onsemi.com COLLECTOR 3 Features • Reduces Board Space • NSV Prefix for Automotive and Other Applications Requiring • 1 BASE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 160 Vdc Collector −Base Voltage VCBO 180 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 60 mAdc Collector Current − Continuous Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature 3 2 Symbol Max SOT−723 CASE 631AA STYLE 1 AH M 1 AH M THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM = Specific Device Code = Date Code Unit PD mW 265 mW/°C 2.1 RqJA °C/W 470 ORDERING INFORMATION Package Shipping† SOT−723 (Pb−Free) 8000 / Tape & Reel NSVMMBT5551M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device MMBT5551M3T5G PD 640 mW 5.1 mW/°C RqJA 195 °C/W TJ, Tstg −55 to +150 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2015 December, 2015 − Rev. 3 1 Publication Order Number: MMBT5551M3/D MMBT5551M3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 160 − 180 − 6.0 − − − 100 100 − 50 80 80 30 − 250 − − − 0.15 0.20 − − 1.0 1.0 − − 50 100 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100°C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc mAdc nAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) Collector Emitter Cut−off (VCB = 10 V) (VCB = 75 V) − Vdc Vdc ICES nA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. www.onsemi.com 2 MMBT5551M3 TYPICAL CHARACTERISTICS 500 300 h FE, DC CURRENT GAIN VCE = 1.0 V VCE = 5.0 V TJ = 125°C 200 25°C 100 -55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region 101 1.0 TJ = 25°C 100 10-1 0.8 TJ = 125°C 10-2 IC = ICES 75°C REVERSE 10-3 FORWARD 25°C 10-4 10-5 0.4 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (A) μ VCE = 30 V VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 0.1 Figure 3. Collector Cut−Off Region 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages www.onsemi.com 3 50 100 MMBT5551M3 TYPICAL CHARACTERISTICS θV, TEMPERATURE COEFFICIENT (mV/ °C) 2.5 2.0 TJ = - 55°C to +135°C 1.5 1.0 Vin 0 - 1.0 qVB for VBE(sat) tr, tf ≤ 10 ns DUTY CYCLE = 1.0% - 1.5 - 2.0 - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 Vout 5.1 k Vin 100 1N914 1000 IC/IB = 10 TJ = 25°C 500 300 20 200 t, TIME (ns) C, CAPACITANCE (pF) RB TJ = 25°C 10 Cibo 7.0 5.0 Cobo 3.0 tr @ VCC = 120 V tr @ VCC = 30 V 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 2.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 10 0.2 0.3 0.5 20 VR, REVERSE VOLTAGE (VOLTS) 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Turn−On Time 1.0 50 100 200 1 5000 2000 IC/IB = 10 TJ = 25°C IC, COLLECTOR CURRENT (A) tf @ VCC = 120 V 3000 tf @ VCC = 30 V 1000 t, TIME (ns) RC Figure 6. Switching Time Test Circuit 30 500 300 3.0 k Values Shown are for IC @ 10 mA Figure 5. Temperature Coefficients 100 70 50 VCC 30 V 100 0.25 mF 10 ms INPUT PULSE - 0.5 1.0 0.2 VBB -8.8 V 10.2 V qVC for VCE(sat) 0.5 ts @ VCC = 120 V 200 100 50 0.2 0.3 0.5 20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 1 s 100 ms 10 ms 1 ms 100 ms 10 ms 0.1 0.01 0.001 200 1 Figure 9. Turn−Off Time 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Safe Operating Area www.onsemi.com 4 MMBT5551M3 PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 HE 2 2X 2X b e C 0.08 X Y SIDE VIEW TOP VIEW 3X DIM A b b1 C D E e HE L L2 L 1 3X L2 RECOMMENDED SOLDERING FOOTPRINT* BOTTOM VIEW MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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