0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MMBT5551W

MMBT5551W

  • 厂商:

    ST(先科)

  • 封装:

    SOT323

  • 描述:

    通用三极管 SOT323 NPN Ic=600mA

  • 数据手册
  • 价格&库存
MMBT5551W 数据手册
MMBT5551W-HAF NPN Silicon Epitaxial Planar Transistors Features • Halogen and Antimony Free(HAF), RoHS compliant Applications • For high voltage amplifier Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 200 mW Tj 150 O C Tstg - 55 to + 150 O C Junction Temperature Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance from Junction to Ambient 1) 1) Symbol Max. Unit RθJA 625 /W Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. ® 1/5 Dated:21/02/2023 Rev:03 MMBT5551W-HAF Characteristics at Tamb=25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE 80 80 30 250 - - Collector Base Cutoff Current at VCB = 120 V ICBO - 50 nA Emitter Base Cutoff Current at VEB = 4 V IEBO - 50 nA V(BR)CBO 180 - V V(BR)CEO 160 - V V(BR)EBO 6 - V VCE(sat) - 0.15 0.2 V VBE(sat) - 1 1 V fT 100 300 MHz Ccbo - 6 pF DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 50 mA Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Gain Bandwidth Product at VCE = 10 V, IC = 10 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz ® 2/5 Dated:21/02/2023 Rev:03 MMBT5551W-HAF Electrical Characteristics Curves Fig. 1 Output Characteristics Curve Fig. 2 Collector Current Vs. VBE Fig. 3 hFE,DC Current Gain vs. Collector Current Fig. 4 VBE(sat) vs. Collector Current ® 3/5 Dated:21/02/2023 Rev:03 MMBT5551W-HAF Electrical Characteristics Curves Fig. 5 VCE(sat) vs. Collector Current Fig. 6 Output Capacitance Fig. 7 Power Derating Curve ® 4/5 Dated:21/02/2023 Rev:03 MMBT5551W-HAF Package Outline Dimensions (Units: mm) SOT-323 UNIT A B C D H H1 HE F L W Q mm 0.1 MAX. 1.4 1.2 0.2 MIN. 2.1 1.9 1.0 0.8 0.7 TYP. 2.4 2.0 0.35 0.25 0.15 0.05 1.35 1.15 5° MAX. Recommended Soldering Footprint 1.6 0.8 0.8 0.8 0.8 1.3 Packing information Pitch Reel Size Package Tape Width (mm) mm inch mm inch SOT-323 8 4 ± 0.1 0.157 ± 0.004 178 7 Per Reel Packing Quantity 3,000 Marking information " G1 " = Part No. " • " = HAF (Halogen and Antimony Free) " YM " = Date Code Marking • G1 " Y " = Year " M " = Month Font type: Arial ® 5/5 Dated:21/02/2023 Rev:03
MMBT5551W 价格&库存

很抱歉,暂时无法提供与“MMBT5551W”相匹配的价格&库存,您可以联系我们找货

免费人工找货