FGP3040G2-F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 FGB3040G2-F085 / FGD3040G2-F085 FGP3040G2-F085 / FGI3040G2-F085 EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT Features Applications „ SCIS Energy = 300mJ at TJ = 25oC „ Automotive lgnition Coil Driver Circuits „ Logic Level Gate Drive „ Coil On Plug Applications „ Qualified to AEC Q101 „ RoHS Compliant Package Symbol JEDEC TO-263AB D²-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 JEDEC TO-252AA D-Pak JEDEC TO-262AA E GATE C G R2 G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 400 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 300 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 170 mJ IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C 41 A IC110 Collector Current Continuous, at VGE = 5.0V, TC = 110°C 25.6 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 150 W 1 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -55 to +175 o C TSTG Storage Junction Temperature Range -55 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Reflow soldering according to JESD020C 260 o C ESD HBM-Electrostatic Discharge Voltage at100pF, 1500Ω 4 kV CDM-Electrostatic Discharge Voltage at 1Ω 2 kV @2014 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Publication Order Number: FGB3040G2-F085/D Device Marking Device Package FGB3040G2 FGB3040G2-F085 FGD3040G2 FGD3040G2-F085 TO-263AB TO-252AA FGP3040G2 FGI3040G2 FGP3040G2-F085 TO-220AB FGI3040G2-F085 TO-262AA Reel Size 330mm Tape Width 24mm Quantity 800 330mm Tube 16mm N/A 2500 50 Tube N/A 50 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC 370 400 430 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 390 420 450 V BVECS Emitter to Collector Breakdown Voltage ICE = -20mA, VGE = 0V, TJ = 25°C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V - - 25 μA - - 1 mA - - 1 - - 40 - 120 - Ω 10K - 30K Ω ICER Collector to Emitter Leakage Current IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance VCE = 250V, RGE = 1KΩ VEC = 24V, TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC mA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, L = 3.0 mHy,RG = 1KΩ, Self Clamped Inductive Switching ESCIS VGE = 5V, (Note 1) TJ = 25oC - 1.15 1.25 V - 1.35 1.50 V TJ = 150oC - 1.68 1.85 V TJ = 25°C - - 300 mJ - - 1 oC/W TJ = 150oC Thermal Characteristics RθJC Thermal Resistance Junction to Case Notes: 1: Self Clamping Inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that starting Tj=25oC; L=3mHy, ISCIS=14.2A,VCC=100V during inductor charging and VCC=0V during the time in clamp. 2: Self Clamping Inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that starting Tj=150oC; L=3mHy, ISCIS=10.8A,VCC=100V during inductor charging and VCC=0V during the time in clamp. www.onsemi.com 2 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Package Marking and Ordering Information Symbol Parameter Test Conditions Min Typ - 21 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V - nC 1.3 1.7 2.2 0.75 1.2 1.8 VCE = 12V, ICE = 10A - 2.8 - V Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, - 0.9 4 μs - 1.9 7 μs - 4.8 15 μs - 2.0 15 μs VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage TJ = 25oC TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive ICE = 6.5A, TJ = 25oC, www.onsemi.com 3 FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 Electrical Characteristics TA = 25°C unless otherwise noted o TJ = 150 C 10 1 SCIS Curves valid for Vclamp Voltages of