FGP3040G2_F085

DATA SHEET www.onsemi.com ECOSPARK)2 300 mJ, 400 V, N-Channel Ignition IGBT COLLECTOR (FLANGE) G E FGB3040G2-F085, FGD3040G2-F085, FGP3040G2-F085, FGI3040G2-F085 JEDEC TO−263AB D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ JEDEC TO−263AA DPAK3 (TO−252 3 LD) CASE 369AS Features • • • • COLLECTOR (FLANGE) G E SCIS Energy = 300 mJ at TJ = 25°C Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant E C E G C G Applications • Automotive Ignition Coil Driver Circuits • Coil On Plug Applications JEDEC TO−220AB TO−220−3LD CASE 340AT JEDEC TO−262AA I2PAK (TO−262 3 LD) CASE 418AV SYMBOL COLLECTOR GATE MARKING DIAGRAMS $Y&Z&3&K FGB 3040G2 R1 R2 $Y&Z&3&K FGD 3040G2 EMITTER $Y&Z&3&K FGP 3040G2 FGx3040G2 $Y &Z &3 &K $Y&Z&3&K FGI 3040G2 = Specific Device Code (x = B/D/P/I) = onsemi Logo = Assembly Plant Code = 3−Digit Date Code = 2−Digits Lot Run Traceability Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2014 July, 2022 − Rev. 4 1 Publication Order Number: FGI3040G2−F085/D FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085 DEVICE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 300 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 170 mJ IC25 Collector Current Continuous, at VGE = 5.0 V, TC = 25°C 41 A IC110 Collector Current Continuous, at VGE = 5.0 V, TC = 110°C 25.6 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 150 W 1 W/°C Operating Junction Temperature Range −55 to +175 °C Storage Junction Temperature Range −55 to +175 °C PD Power Dissipation Derating, for TC > 25°C TJ TSTG Max. Lead Temp. for Soldering (Leads at 1.6 mm from case for 10 s) 300 °C TPKG TL Reflow Soldering according to JESD020C 260 °C ESD HBM−Electrostatic Discharge Voltage at 100 pF, 1500  4 kV CDM−Electrostatic Discharge Voltage at 1  2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self Clamping Inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that starting Tj = 25°C; L = 3 mHy, ISCIS = 14.2 A, VCC = 100 V during inductor charging and VCC = 0 V during the time in clamp. 2. Self Clamping Inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that starting Tj = 150°C; L = 3 mHy, ISCIS = 10.8 A, VCC = 100 V during inductor charging and VCC = 0 V during the time in clamp. www.onsemi.com 2 FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF STATE CHARACTERISTICS BVCER Collector to Emitter Breakdown Voltage ICE = 2 mA, VGE = 0, RGE = 1 k, TJ = −40 to 150°C 370 400 430 V BVCES Collector to Emitter Breakdown Voltage ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = −40 to 150°C 390 420 450 V BVECS Emitter to Collector Breakdown Voltage ICE = −20 mA, VGE = 0 V, TJ = 25°C 28 − − V BVGES Gate to Emitter Breakdown Voltage IGES = ±2 mA ±12 ±14 − V ICER Collector to Emitter Leakage Current VCE = 250 V, RGE = 1 k TJ = 25°C − − 25 A TJ = 150°C − − 1 mA TJ = 25°C − − 1 mA TJ = 150°C − − 40 − 120 −  10K − 30K  IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance VEC = 24 V ON STATE CHARACTERISTICS VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6 A, VGE = 4 V TJ = 25°C − 1.15 1.25 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10 A, VGE = 4.5 V TJ = 150°C − 1.35 1.50 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15 A, VGE = 4.5 V TJ = 150°C − 1.68 1.85 V Self Clamped Inductive Switching L = 3.0 mHy, RG = 1 k, VGE = 5 V, (Note 3) TJ = 25°C − − 300 mJ − 21 − nC TJ = 25°C 1.3 1.7 2.2 V TJ = 150°C 0.75 1.2 1.8 VCE = 12 V, ICE = 10 A − 2.8 − V VCE = 14 V, RL = 1 k VGE = 5 V, RG = 1 k TJ = 25°C − 0.9 4 s − 1.9 7 s VCE = 300 V, L = 1 mH, VGE = 5 V, RG = 1 k ICE = 6.5 A, TJ = 25°C − 4.8 15 s − 2.0 15 s − − 1 °C/W ESCIS DYNAMIC CHARACTERISTICS QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA, VCE = VGE VGEP Gate to Emitter Plateau Voltage SWITCHING CHARACTERISTICS td(ON)R trR td(OFF)L tfL Current Turn−On Delay Time−Resistive Current Rise Time−Resistive Current Turn−Off Delay Time−Inductive Current Fall Time−Inductive THERMAL CHARACTERISTICS RJC Thermal Resistance Junction to Case Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Self Clamping Inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that starting Tj = 25°C; L = 3 mHy, ISCIS = 14.2 A, VCC = 100 V during inductor charging and VCC = 0 V during the time in clamp. www.onsemi.com 3 FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085 100 ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) TYPICAL PERFORMANCE CURVES RG = 1 k, VGE = 5 V, VCE = 100 V TJ = 25°C TJ = 150°C 10 1 SCIS Curves valid for Vclamp Voltages of