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序号器件名产品描述数据手册生厂商
1PG151_R2_00001DIODE GEN PURP 100V 1.5A DO15下载PANJIT SEMI CONDUCTOR
2PG5396_R2_00001DIODE GEN PURP 500V 1.5A DO15下载PANJIT SEMI CONDUCTOR
3PG206R_R2_00001DIODE GEN PURP 600V 2A DO15下载PANJIT SEMI CONDUCTOR
4PG1510_R2_00001DIODE GEN PURP 1KV 1.5A DO15下载PANJIT SEMI CONDUCTOR
5PTP04N04A下载Perfect Intelligent Power Semiconductor Company
6PDTC123YU,1151 NPN - Pre Biased 200mW 100mA 50V SOT-323-3 Digital Transistors ROHS下载Rubycon Corporation
7PDTC114YU,115晶体管类型:1个NPN-预偏置;功率(Pd):200mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;下载Rubycon Corporation
8PDTC114TU,115下载Rubycon Corporation
9PDTC124EU,11560@5mA,5V 150mV@10mA,500uA 1 NPN - Pre Biased 230MHz 200mW 100mA 50V 100nA SOT-323...下载Rubycon Corporation
10PDTB114EUX晶体管类型:1个NPN-预偏置;功率(Pd):300mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):500nA...下载Rubycon Corporation
11PDTC123JU,115晶体管类型:1个NPN-预偏置;功率(Pd):200mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直...下载Rubycon Corporation
12PMF250XNEX类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):1A;功率(Pd):342mW;导通电阻(RDS(on)@Vgs,Id):212mΩ@4.5V,9...下载Rubycon Corporation
13PMST3904,115晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):100@10...下载Rubycon Corporation
14PTD3006类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):80A;功率(Pd):58W;导通电阻(RDS(on)@Vgs,Id):6mΩ@10V,40A;阈...下载ShenZhen Puolop Electronics co.,LTD.
15PTD50N06下载ShenZhen Puolop Electronics co.,LTD.
16PMEG4005EH,115直流反向耐压(Vr):40V;平均整流电流(Io):500mA;正向压降(Vf):470mV@500mA;下载Rubycon Corporation
17PN8160NEC-T1T超低待机功耗准谐振交直流转换芯片下载Wuxi Chipown Micro-electronics Limited
18PXT8050晶体管类型:NPN;集射极击穿电压(Vceo):25V;集电极电流(Ic):1.5A;功率(Pd):500mW;集电极截止电流(Icbo):100nA;集电极-发射...下载HANGZHOU DONGWO ELECTRONIC TECHNOLOGY CO. LTD.
19PZ1608U600-2R0TF贴片磁珠 60Ω@100MHz ±25% 2A 0603下载SUNLORD
20P6SMBJ10CATVS DIODE 8.55V 14.5V DO214AA下载Littelfuse Inc.