Q62702-G0057

BGA 420 Si-MMIC-Amplifier in SIEGET® 25-Technologie Preliminary data • Cascadable 50 Ω-gain block • Unconditionally stable • Gain |S21 |2 = 13 dB at 1.8 GHz 3 4 IP3out = +9 dBm at 1.8 GHz (VD = 3 V, ID = typ. 6.4 mA) • Noise figure NF = 2.2 dB at 1.8 GHz • Reverse isolation > 28 dB and return loss IN / OUT > 12 dB at 1.8 GHz 4 3 OUT 2 1 VD VPS05605 Circuit Diagram IN 1 2 GND EHA07385 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA 420 Parameter Marking Ordering Code BLs Q62702-G0057 Pin Configuration 1, IN 2, GND Symbol Package 3, OUT 4, VD Value 15 6 90 0 150 -65 ...+150 -65 ...+150 SOT-343 Unit mA V mW dBm °C Maximum Ratings Device current Device voltage Total power dissipation, TS ≤ tbd °C ID VD Ptot PRFin Tj TA T stg 1) RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS ≤ tbd K/W 1) TS is measured on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Jul-13-1998 1998-11-01 BGA 420 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Device current Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1 GHz 1dB compression point f = 1 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz Typical biasing configuration Unit max. 8 mA dB typ. 6.7 19 17 13 28 ID |S21| 2 5.4 17 15 11 25 S12 NF 7.5 -2.5 8 12 1.9 2 2.2 9 -1 11 16 2.2 2.3 2.5 dB IP 3out P-1dB RL in RL out dBm +VD 100 pF RF OUT 100 pF 10 nF 4 3 BGA 420 1 100 pF RF IN GND EHA07386 2 Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device to provide a low impedance path! 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground! Semiconductor Group Semiconductor Group 22 Jul-13-1998 1998-11-01 BGA 420 Typical S-Parameters at TA = 25 °C f GHz S11 MAG ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG VD = 3 V, Z o = 50 Ω 0.5686 -8.5 0.1 0.5066 -19.2 0.5 0.4404 -28.7 0.8 0.3904 -34.6 1 0.2841 -50.5 1.5 0.2343 -60.6 1.8 0.2136 -64.1 1.9 0.2062 -68.4 2 0.1688 -89.7 2.4 0.1558 -104.9 3 9.314 8.393 7.352 6.69 5.244 4.567 4.355 4.165 3.417 2.861 170.6 149.4 135.2 126.8 111.1 104 102 99.7 91.7 85.3 0.0268 0.0248 0.0236 0.024 0.0314 0.0378 0.0406 0.0426 0.0549 0.0682 12.7 11.7 25.6 35.9 57.2 63.5 66.1 67.2 71.4 73.1 0.2808 0.2613 0.2361 0.2144 0.1398 0.0979 0.0838 0.0689 0.0224 0.0284 -8.6 -3.8 -6.7 -9 -15 -18.2 -21.5 -22.2 -48 -147.5 Spice-model BGA 420 BGA 420-chip including parasitics +V 14 T1 T501 14.5kΩ 140Ω 2.4kΩ 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF R1 R2 13 OUT R2 R3 C1 CP1 CP2 CP3 CP4 R1 R3 IN 11 C1 T1 C P3 C P4 C P1 C P2 12 GND EHA07387 Semiconductor Group Semiconductor Group 33 Jul-13-1998 1998-11-01 BGA 420 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3 aA V V Ω fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469 A A Ω Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0405 15.761 0.96647 0.037223 0.21215 0.12691 0.37747 0.19762 96.941 0.08161 0.75 1.11 300 fA fA mA Ω V fF V eV K Ω C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 - RS = 20 All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: L2 +V C1 C2 L BO IN C CB L1 14 C3 L BI 11 BGA 420 Chip 12 13 L CI L CO OUT C BE L EI C’-E’Diode C CE L EO GND EHA07388 LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 nH nH nH nH nH nH fF fF fF fF fF fF nH nH Valid up to 3GHz Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) © 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Jul-13-1998 1998-11-01 BGA 420 Insertion power gain |S 21| 2 = f (f) Insertion power gain |S21| 2 = f (f) VD = 3 V VD, I D = parameter 25 TA = parameter 22 dB VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3,4mA dB 18 16 TA=-20°C TA=+25°C TA=+75°C |S 21|2 |S 21|2 0 1 15 14 12 10 10 8 6 5 4 2 0 -1 10 10 GHz 10 0 -1 10 10 0 GHz 10 1 f f Noise figure NF = f (f) Noise figure NF = f (f) VD = 3V VD,ID = parameter 5 TA = parameter 3.5 dB dB VD=5V, ID=12.4mA VD=3V, ID=6.4mA TA=+75°C TA=+25°C TA=-20°C 2.5 NF 3 NF 2.0 1.5 1.0 0.5 0 1 2 1 0 -1 10 10 GHz 10 0.0 -1 10 10 0 GHz 10 1 f f Semiconductor Group Semiconductor Group 55 Jul-13-1998 1998-11-01 BGA 420 Intercept point at the output Intercept point at the output IP 3out = f (f) VD,ID = parameter 20 dBm IP3out = f (f), VD = 3V TA = parameter 12 16 VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3.4mA dBm 10 9 IP 3out IP 3out 14 12 10 8 6 4 8 7 6 5 4 3 2 TA=-20°C TA=+25°C TA=75°C 2 0 -1 10 0 1 1 10 GHz 10 0 -1 10 10 0 GHz 10 1 f f Semiconductor Group Semiconductor Group 66 Jul-13-1998 1998-11-01