T1610H-6T

T1610H 16 A Triac, high temperature and logic level Datasheet  production data Applications A2  Electric heater  Water heater, room heater G A1  Coffee machine A2  Hand dryer  Thermostat A1 A2 G Description This clip technology Triac has very high thermal cycling performance, and the design structure presents a higher ITSM. The 150 °C maximum junction temperature of this device offers easier thermal management. Its 10 mA gate current offers direct drive from a microcontroller, mainly for resistive load control. TO-220AB (T1610H-6T) Features  Junction temperature up to 150 °C max. Table 1. Device summary  Logic level gate current: 10 mA  Repetitive peak off-state voltage: 600 V Order code  High ITSM  High thermal cycling performance T1610H-6T TO-220AB May 2013 This is information on a product in full production. DocID024630 Rev 1 Package VDRM, VRRM IGT IT(RMS) 600 V 10 mA 16 A 1/9 www.st.com 9 Characteristics 1 T1610H Characteristics Table 2. Absolute maximum rating (Tj = 25 °C, unless otherwise specified) Symbol Value Unit Tc = 133 °C 16 A tp = 16.7 ms 168 tp = 20ms 160 I²t Value for fusing tp = 10 ms 169 A ²s Critical rate of rise of on-state current, IG = 2 x IGT, tr  100 ns F = 60 Hz 100 A/µs VDRM, VRRM Repetitive peak off-state voltage Tj = 150 °C 600 V VDSM, VRSM Non repetitive peak off-state voltage tp = 10 ms 700 V IGM Peak gate current tp = 20 µs 4 A PGM Peak gate power dissipation tp = 20 µs 10 W 1 W -40 to +150 °C 260 °C IT(RMS) ITSM I ²t dI/dt PG(AV) Parameter On-state rms current (180° conduction angle) Non repetitive surge peak on-state current, Tj initial = 25 °C Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range TL Lead temperature for soldering during 10 s A Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrant Unit MIN. 0.5 mA MAX. 10 mA IGT VD = 12 V, RL = 33  I - II - III VGT VD = 12 V, RL = 33  I - II - III MAX. 1.3 V VGD VD = VDRM, RL = 3.3 k Tj = 150 °C I - II - III MIN. 0.2 V  MAX. 15 mA I - II - III MAX. 30 mA  MIN. 100 V/µs IH IT = 500 mA, gate open IL IG = 1.2 IGT dV/dt VD = 67% x VDRM, VRRM, gate open Tj = 150 °C  (dV/dt)c = 0.1 V/µs (dl/dt)c Tj = 150 °C (dV/dt)c = 10 V/µs tgt 2/9 Value ITM = 13 A, VD = 400 V, IG = 100 mA, dIG/dt = 100 mA/µs, RL = 30  DocID024630 Rev 1   8.5 MIN. A/ms 3 TYP. 2 µs T1610H Characteristics Table 4. Static characteristics Symbol Test conditions Value Unit VTM ITM = 22.5 A, tp = 380 µs Tj = 25 °C 1.55 V Vto Threshold voltage Tj = 150 °C 0.80 V Rd Dynamic resistance Tj = 150 °C 22 m Tj = 25 °C 5 µA Tj = 150 °C 2 mA Value Unit IDRM, IRRM VD = VDRM, VR = VRRM MAX. Table 5. Thermal resistance Symbol Parameter Rth(j-c) Junction to case (AC) 1.0 °C/W Rth(j-a) Junction to ambient (AC) 60 °C/W Figure 1. Maximum power dissipation versus average on-state current (full cycle) 18 Figure 2. On-state rms current versus case temperature (full cycle) P(W) 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 180° 2 2 IT(RMS)(A) TC(°C) 0 0 0 2 4 6 8 10 12 14 16 Figure 3. On-state rms current versus ambient temperature (free air convection) 3.5 IT(RMS)(A) IT(RMS)(A) 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth] Zth(j-c) 3.0 Zth(j-a) 2.5 2.0 1.0E-01 1.5 1.0 0.5 Ta(°C) 0.0 0 25 50 75 tp(s) 100 125 150 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 DocID024630 Rev 1 3/9 Characteristics T1610H Figure 5. Relative variation of gate trigger current and voltage versus junction temperature (typical values) IGT,VGT [T j] / IGT,VGT [T j=25 °C] 3.0 2.5 Figure 6. Relative variation of holding and latching current versus junction temperature (typical values) IH, IL[Tj] / IH, IL[Tj = 25 °C] 2.5 IGT Q3 2.0 2.0 1.5 IGT Q1-Q2 1.5 1.0 VGT 1.0 IL 0.5 0.5 0.0 -50 -30 -10 10 30 50 70 90 110 130 150 Figure 7. Relative variation of dV/dt immunity versus junction temperature (typical values) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 dV/dt [Tj] / dV/dt [Tj = 150 °C] Tj(°C) 50 75 100 125 150 Figure 9. Relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dV/dt)c (dI/dt)c[(dV/dt)c]/Specified(dI/dt)c 2 1 (dV/dt)c (V/µs) 0 0.1 4/9 1.0 10.0 -50 100.0 -30 -10 10 30 50 70 90 110 130 150 Figure 8. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values) (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C] 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 VD=VR=402 V 25 3 IH Tj(°C) Tj(°C) 0.0 Tj(°C) 25 50 75 100 125 150 Figure 10. Surge peak on-state current versus number of cycles 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 ITSM(A) t = 20 ms One cycle Non repetitive Tj initial=25 °C Repetitive TC=133 °C 1 DocID024630 Rev 1 Number of cycles 10 100 1000 T1610H Characteristics Figure 11. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t 10000 ITSM (A), I²t (A²s) 1000 1000 100 ITSM I²t 100 10 Tj=150 °C tp(ms) sinusoidal pulse with width tp