T1610T-6I

T16T Snubberless™, logic level and standard 16 A Triacs Datasheet - production data Description A2 Available in through-hole, the T16T series of Triacs can be used as on/off or phase angle control function in general purpose ac switching where high commutation capability is required. G A1 This series can be designed-in in many value sensitive appliances thanks to the parameters guidance provided in the following pages. A1 A2 Provides insulation rated at 2500 V rms (TO-220AB insulated package). G TO-220AB insulated (T16xxT-6I) Table 1. Device summary Order code Symbol Value T1610T-6I IGT 3Q logic level 10 mA T1620T-6I T1635T-6I IGT 3Q Snubberless 20 / 35 mA Features • Medium current Triac • High static and dynamic commutation • Low thermal resistance with clip bonding • Packages is RoHS (2002/95/EC) compliant • 600 V VRM • UL certified (ref. file E81734) Applications • Value sensitive application • General purpose ac line load switching • Motor control circuits in power tools • Small home appliances, lighting • Inrush current limiting circuits • Overvoltage crowbar protection TM: Snubberless is a trademark of STMicroelectronics June 2014 This is information on a product in full production. DocID16488 Rev 3 1/9 www.st.com Characteristics 1 T16T Characteristics Table 2. Absolute maximum ratings (limiting values; Tj = 25 °C, unless otherwise specified) Symbol IT(RMS) ITSM I²t dI/dt VDSM / VRSM IGM PG(AV) Tstg Tj 2/9 Parameter On-state rms current (full sine wave) Value Unit Tc = 86 °C 16 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz tp = 20 ms 120 F = 60 Hz tp = 16.7 ms 126 I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT tr ≤ 100 ns F = 60 Hz Non repetitive surge peak off-state voltage Peak gate current A 105 A ²s Tj = 125 °C 50 A/µs tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 V tp = 20 µs Tj = 125 °C 4 A Tj = 125 °C 1 W Storage junction temperature range - 40 to + 150 °C Operating junction temperature range - 40 to + 125 °C Average gate power dissipation DocID16488 Rev 3 T16T Characteristics Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) T16xxT Symbol Test conditions Quadrant Unit T1610T T1620T T1635T IGT (1) I - II - III VD = 12 V RL = 30 W 10 20 35 MAX. mA IV VGT VD = VDRM, RL = 3.3 kW, Tj = 25 °C ALL MAX. 1.3 V VGD VD = VDRM, RL = 3.3 kW, Tj = 125 °C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. I - III IL IG = 1.2 IGT IV Tj = 125 °C VD = 67% VDRM, gate open 40 20 35 50 Tj = 150 °C(3) mA mA 30 40 80 100 1000 2000 20 500 1000 6 16 MIN. (dV/dt)c = 0.1 V/µs V/µs 8 Tj = 125 °C (dV/dt)c = 10 V/µs (di/dt)c (2) 25 MAX. II dV/dt (2) 12 4 Without snubber MIN. (dV/dt)c = 0.1 V/µs A/ms 3 Tj = 150 °C(3) (dV/dt)c = 10 V/µs 1 Without snubber 3 12 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1. 3. derating information for excess temperature above Tj max. Table 4. Static characteristics Symbol VT (1) Test conditions Value Unit ITM = 22.6 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V VTO (1) Threshold voltage Tj = 125 °C MAX. 0.85 V RD (1) Dynamic resistance Tj = 125 °C MAX. 30 mΩ 5 µA IDRM IRRM VDRM = VRRM Tj = 25 °C MAX. Tj = 125 °C Tj = 150 °C(2) VD = 0.9 x VDRM 1 mA TYP. 1.9 1. for both polarities of A2 referenced to A1. 2. derating information for excess temperature above Tj max. DocID16488 Rev 3 3/9 9 Characteristics T16T Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 2.1 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1. Maximum power dissipation versus rms on-state current (full cycle) 20 Figure 2. On-state rms current versus case temperature (full cycle) P(W) IT(RMS)(A) α = 180° 18 180° α = 180° 16 TO-220 ins. 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 IT(RMS)(A) 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TC(°C) 0 25 Figure 3. On-state rms current versus ambient temperature 3.5 IT(RMS)(A) 50 75 100 125 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth] Zth(j-c) α = 180° 3.0 Zth(j-a) TO-220AB 2.5 2.0 TO-220 ins. 1.0E-01 1.5 1.0 TO-220AB 0.5 0.0 Tp(s) Ta(°C) 0 25 50 75 100 125 Figure 5. On state characteristics (maximum values) 1000 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6. Surge peak on state current versus number of cycles ITM(A) ITMS(A) 120 t = 20 ms 100 Non repetitive Tj initial = 25 °C 100 One cycle 80 60 10 Tj = 125 °C Tjmax: Vto = 0.85 V Rd = 25 mW Tj = 25 °C VTM(V) 1 0 4/9 Repetitive Tc = 86 °C 40 1 2 3 20 TO-220AB ins. 0 4 1 DocID16488 Rev 3 Number of cycles 10 100 1000 T16T Characteristics Figure 7. Non repetitive surge peak on state current for a sinusoidal 10000 ITSM(A), I²t (A²s) Figure 8. Relative variation of gate trigger current and gate trigger voltage versus junction temperature 3.0 Tj initial = 25 °C IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C] 2.5 1000 IGT Q3 2.0 IGT Q1-Q2 ITSM 1.5 dl /dt limitation: 50 A / µs 100 1.0 I²t IGT Q1-Q2-Q3 0.5 tp(ms) 10 0.01 0.10 1.00 10.00 Figure 9. Relative variation of holding current and latching current versus junction temperature 2.5 IH, IL[Tj] / IH, IL[Tj = 25 °C] 0.0 -50 Tj(°C) -25 0 25 50 75 100 125 Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature 7 dV / dt [Tj] / dV / dt [Tj = 125 °C] VD = VR = 402 V 6 2.0 5 1.5 4 3 1.0 IL 0.5 0.0 -50 IH 1 Tj(°C) Tj(°C) 0 -25 0 25 50 75 100 125 Figure 11. Relative variation of critical rate of decrease of main current versus junction temperature 8 1 2 25 50 75 100 125 Figure 12. Leakage current versus junction temperature for different values of blocking voltage (typical values) (dl / dt)c [Tj] / (dl / dt)c [Tj = 125 °C] 1.0E+00 IDRM/IRRM [Tj; VDRM / VRRM] / IDRM/IRRM [Tj = 125 °C; 700 V] VDRM = VRRM = 600 V 7 6 VDRM = VRRM = 400 V 1.0E-01 5 4 VDRM = VRRM = 200 V 3 1.0E-02 2 1 Tj(°C) 0 25 50 75 1.0E-03 100 125 DocID16488 Rev 3 25 50 75 100 125 5/9 9 Ordering information scheme 2 T16T Ordering information scheme Figure 13. Ordering information scheme T TRIAC Current 16 = 16 A Sensitivity 10 = 10 mA 20 = 20 mA 35 = 35 mA Application specific Voltage 6 = 600 V Package I = TO-220AB-Ins. 6/9 DocID16488 Rev 3 16 10 T - 6 I T16T 3 Package mechanical data Package mechanical data • Epoxy meets UL94, V0 • Lead-free packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-220AB insulated dimensions Dimensions Ref. Millimeters Min. A 15.20 a1 C B ØI Typ. Max. Inches Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 b2 L F A I4 l3 c2 a1 l2 a2 M b1 c1 e M DocID16488 Rev 3 2.60 0.102 7/9 9 Ordering information 4 T16T Ordering information Table 7. Ordering information 5 Order code Marking T1610T-6I T1610T-6I T1620T-6I T1620T-6I T1635T-6I T1635T-6I Package Weight Base qty Delivery mode TO-220AB ins. 2.3 g 50 Tube Revision history Table 8. Document revision history 8/9 Date Revision Changes 03-Dec-2009 1 Initial release. 18-Jan-2010 2 Updated pag.1. 19-Jun-2014 3 Updated features in cover page. DocID16488 Rev 3 T16T Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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