T1610T-8I

T1610T-8I Logic level 16 A Triac Datasheet − production data Features A2 ■ High static and dynamic commutation ■ Three quadrants ■ Logic level (direct microcontroller driven) ■ Package is RoHS (2002/95/EC) compliant ■ Tab insulated, voltage = 2500 V rms ■ UL certified (ref. file E81734) G A1 A1 A2 G Applications ■ General purpose AC line load switching ■ Home appliances: – Fan – Pump – Solenoid ■ Lighting ■ Heaters ■ Inrush current limiting circuits ■ Overvoltage crowbar protection circuits TO-220AB insulated (T1610T-8l) Table 1. Device summary Order code Quadrants Value IGT (mA) T1610T-8I I - II - III 10 Description Available in TO220AB-Insulated (ceramic insulated), the T1610T-8I series of Triac can be used in an on/off or phase angle control function in general purpose AC switching. T1610T-8I can be directly driven through a microcontroller allowing usage of small capacitive or resistive power supplies. Provides insulation rated at 2500 V rms (TO-220AB insulated package). April 2012 This is information on a product in full production. Doc ID 018766 Rev 3 1/10 www.st.com 10 Characteristics T1610T-8I 1 Characteristics Table 2. Absolute maximum rating (Tj = 25 °C, unless otherwise specified) Symbol IT(RMS) ITSM I ²t Parameter Value Tc = 108 °C 16 Tc = 119 °C 12 F = 50 Hz t = 20 ms 120 F = 60 Hz t = 16.7 ms 126 tp = 10 ms 95 Tj = 150 °C 600 Tj = 125 °C 800 Tj = 25 °C 900 V 100 A/µs 4 A 1 W -40 to +150 -40 to +150 °C 260 °C 2500 V On-state rms current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) Repetitive peak off-state voltage, gate open VDSM, VRSM Non repetitive surge peak off-state voltage tp = 10 ms dI/dt Critical rate of rise of on-state current IG = 2 x IGT F = 100 Hz IGM Peak gate current tp = 20 µs PG(AV) Tstg Tj TL Average gate power dissipation Storage junction temperature range Operating junction temperature range Lead temperature for soldering during 10 s (at 4 mm from case for TO220AB-ins.) Vins (rms) Insulation rms voltage, 1 minute, TO220AB ceramic insulated 2/10 A A I²t Value for fusing VDRM, VRRM Unit Doc ID 018766 Rev 3 A²s V T1610T-8I Table 3. Characteristics Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Unit MIN. 0.5 mA I - II - III MAX. 10 mA VD = 12 V, RL = 30 Ω All MAX. 1.3 V VD = 800 V, RL = 3.3 kΩ, Tj = 125 °C All MIN. 0.2 V MAX. 25 mA VD = 12 V, RL = 30 Ω VGT VGD IH Value I - II - III IGT (1) (1) Quadrant IT = 500 mA I - III IL dV/dt (1) (dl/dt)c (1) tGT IG = 1.2 IGT 20 MAX. mA II VD = 67% x 800 V gate open Tj = 125 °C VD = 67% x 600 V gate open Tj = 150 °C (dV/dt)c = 0.1 V/µs Tj = 125 °C (dV/dt)c = 10 V/µs Tj = 125 °C 30 100 MIN. V/µs 50 9 3 MIN. A/ms (dV/dt)c = 0.1 V/µs Tj = 150 °C 5.4 (dV/dt)c = 10 V/µs Tj = 150 °C 1.8 gate controlled turn on time ITM = 13 A, VD = 400 V, IG = 100 mA, dIG/dt = 100 mA/µs, RL = 30 Ω I - II - III TYP. 2 µs 1. For both polarities of A2 referenced to A1 Table 4. Static characteristics Symbol VTM (1) Test conditions Value Unit ITM = 22.6 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V Vto (1) Threshold voltage Tj = 150 °C MAX. 0.85 V Rd (1) Dynamic resistance Tj = 150 °C MAX. 30 mΩ 5 µA IDRM IRRM Tj = 25 °C VDRM = VRRM = 800 V Tj = 125 °C VDRM = VRRM = 600 V Tj = 150 °C MAX. 1 mA 3.6 1. for both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 2.1 °C/W Rth(j-a) Junction to ambient 60 °C/W Doc ID 018766 Rev 3 3/10 Characteristics Figure 1. 20 T1610T-8I Maximum power dissipation versus Figure 2. on-state rms current (full cycle) P(W) 18 180° 18 On-state rms current versus case temperature (full cycle) IT(RMS)(A) 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 IT(RMS)(A) 0 0 2 4 Figure 3. 3.0 6 8 10 12 14 On-state rms current versus ambient temperature (free air convection) IT(RMS)(A) 16 TC(°C) 0 0 25 Figure 4. 1.0E+00 50 75 100 125 150 Relative variation of thermal impedance versus pulse duration K = [Zth / Rth] Zth(j-c) 2.5 Zth(j-a) 2.0 1.5 1.0E-01 1.0 0.5 Ta(°C) 0.0 0 25 Figure 5. 50 Tp(s) 75 100 125 150 On-state characteristics (maximum values) 1000 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 Figure 6. ITM(A) 130 Tjmax: Vto = 0.85 V Rd = 30 mΩ Surge peak on-state current versus number of cycles ITSM(A) 120 110 t = 20 ms 100 90 100 One cycle 80 Non repetitive Tj initial = 25 °C 70 60 Tj = 150 °C 50 10 Repetitive Tc = 108 °C 40 30 Tj = 25 °C 20 0 4/10 10 VTM(V) 1 1 2 3 4 Number of cycles 0 5 Doc ID 018766 Rev 3 1 10 100 1000 T1610T-8I Characteristics Figure 7. Non repetitive surge peak on-state Figure 8. current and corresponding values of I2t 10000 ITSM (A), I²t (A²s) Relative variation of gate trigger current versus junction temperature (typical values) IGT[Tj]/IGT[Tj = 25 °C] 2.0 typical values Tj initial = 25 °C IGT Q3 1.5 1000 ITSM IGT Q1-Q2 1.0 dl /dt limitation: 100 A / µs I²t 100 0.5 Sinusoidal pulse width tp