0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SLG59M1599V

SLG59M1599V

  • 厂商:

    DIALOGSEMICONDUCTOR(戴乐格)

  • 封装:

    UFDFN8

  • 描述:

    IC PWR SWITCH N-CHANNEL 1:1 8DFN

  • 数据手册
  • 价格&库存
SLG59M1599V 数据手册
SLG59M1599V Ultra-small 40 mΩ / 1.0 A Dual Load Switch  General Description Pin Configuration The product is packaged in an ultra-small 1.6 x 1.0 mm package. D2 1 ON2 2 ON1 3 D1 4 Features • • • • • • Two 40 mΩ 1.0 A MOSFETs Two integrated VGS Charge Pumps User selectable ramp rate with external resistor Protected by thermal shutdown Pb-Free / Halogen-Free / RoHS compliant STDFN 8L, 1.6 x 1.0 mm SLG59M1599V The SLG59M1599V is designed for load switching applications. The part comes with two 40 mΩ 1.0 A rated MOSFETs, each controlled by an ON control pin. Each MOSFET’s ramp rate is adjustable depending on the input current level of the ON pin. 8 S2 7 GND 6 VDD 5 S1 8-pin STDFN (Top View) Block Diagram S1 D1 D2 1.0 A 1.0 A Charge Pump Out S2 Charge Pump Out ON1 ON2 CMOS Input ©2022 Renesas Electronics Corporation 000-0059M1599-103 Rev 1.02 Revised February 4, 2022 SLG59M1599V  Pin Description Pin # Pin Name Type Pin Description 1 D2 MOSFET 2 ON2 Input Turns on MOSFET1. Configurable slew rate control depending on input current. 3 ON1 Input Turns on MOSFET2. Configurable slew rate control depending on input current. 4 D1 MOSFET Drain of Power MOSFET2 5 S1 MOSFET Source of Power MOSFET2 6 VDD PWR Power Supply 7 GND GND Ground 8 S2 MOSFET Drain of Power MOSFET1 Source of Power MOSFET1 Ordering Information Part Number Type Production Flow SLG59M1599V STDFN 8L Industrial, -40 °C to 85 °C SLG59M1599VTR STDFN 8L (Tape and Reel) Industrial, -40 °C to 85 °C Application Diagram Current Controls Ramp Rate S2 3.3 V R2 ON2 Current Controls Ramp Rate Control IC ON1 3.3 V GND VDD R1 D1 000-0059M1599-103 SLG59M1599V Control IC D2 S1 Page 2 of 9 SLG59M1599V  Absolute Maximum Ratings Parameter VDD TS Description Conditions Power Supply Storage Temperature Min. Typ. Max. Unit -- -- 6 V -65 -- 150 °C ESDHBM ESD Protection Human Body Model 2000 -- -- V ESDCDM ESD Protection Charged Device Model 1000 -- -- V MSL θJA WDIS Moisture Sensitivity Level Thermal Resistance, 1 1 x 1.6mm STDFN; Determined using 1 in2, 1 oz. copper pads under each Dx and Sx terminal and FR4 pcb material Package Power Dissipation MOSFET IDSPK Peak Current from Drain to Source For no more than 1 ms with 1% duty cycle -- 72 -- °C/W -- -- 0.4 W -- -- 1.5 A Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Electrical Characteristics TA = -40 °C to 85 °C (unless otherwise stated) Parameter Description Conditions VDD Power Supply VD1 VD2 IDD RDSON IDS TDelay_ON Min. Typ. Max. Unit Pin 6 2.5 -- 5.5 V Drain Voltage of MOS1 Pin 4 0.85 -- VDD V Drain Voltage of MOS2 Pin 1 0.85 -- VDD V when OFF -- 0.1 1 µA when ON, No load -- 35 50 µA TA 25°C MOSFET[1:2] -- 40 50 mΩ TA 70°C MOSFET[1:2] -- 50 55 mΩ Power Supply Current (PIN 6) Static Drain to Source ON Resistance TA 85°C MOSFET[1:2] -- 55 65 mΩ Operating Current VD = 2.5 V to 5.5 V -- -- 1.0 A ON pin Delay Time 50% ON to Ramp Begin Input Current (PIN2, PIN3) = 20 µA, VDD = VD = 5 V, Source_Cap = 10 µF, RL = 20 Ω -- 2.4 4.0 ms Configurable 1 50% ON to 90% VS TTotal_ON Total Turn On Time Example: Input Current (PIN2, PIN3) = 20 µA, VDD = VD = 5 V, Source_Cap = 10 µF, RL = 20 Ω -- TSLEWRATE ON_VREF Slew Rate ON Pin Reference Voltage 2 ON_VIH_INI Initial Turn On Voltage ON_VIL Low Input Voltage on ON pin ON_R Input Impedance on ON pin -- ms Configurable 1 10% VS to 90% VS Example: Input Current (PIN2, PIN3) = 20 µA, VDD = VD = 5 V, Source_Cap = 10 µF, RL = 20 Ω 11.7 ms V/ms -- 0.56 -- V/ms 0.99 1.05 1.10 V Internal Charge Pump ON 1.2 -- VDD V Internal Charge Pump OFF -0.3 0 0.3 V 100 -- -- MΩ Thermal shutoff turn-on temperature -- 125 -- °C THERMOFF Thermal shutoff turn-off temperature -- 100 -- °C THERMTIME Thermal shutoff time -- -- 1 ms THERMON 000-0059M1599-103 Page 3 of 9 SLG59M1599V  Electrical Characteristics (continued) TA = -40 °C to 85 °C (unless otherwise stated) Parameter TOFF_Delay TFALL Description Conditions Min. Typ. Max. Unit OFF Delay Time 50% ON to VS Fall, VD = 5 V, RL = 20 Ω -- 55 70 µs VS Fall Time 90% VS to 10% VS, VD = 5 V, RL = 20 Ω -- 32 -- µs Notes: 1. Refer to table for configuration details. 2. Voltage before ON pin resistor needs to be higher than 1.2 V to generate required ION Slew Rate vs. ON Current Slew Rate (V/ms) Vs. ON Current, T = 25C 10%VS to 90%VS, RL = 20 ohm, CL = 10uF 7.00 6.00 5.00 VD = 2.5V V/ms 4.00 VD = 3.3V 3.00 VD = 5V VD = 5.25V 2.00 VD = 5.5V 1.00 0.00 0 50 100 150 200 250 ON Current (uA) TTotal_ON vs. On Current Ttotal_on vs ON Current. 50%ON to 90%VS, T = 25C, RL = 20 ohm, CL = 10uF 14.00 12.00 Ttota al_on (ms) 10.00 VD = 2.5V 8.00 VD = 3.3V 6.00 VD = 5V VD = 5.25V 4.00 VD = 5.5V 2.00 0.00 0 50 100 150 200 250 ON Current (uA) 000-0059M1599-103 Page 4 of 9 SLG59M1599V  TTotal_ON, TON_Delay and Slew Rate Measurement ON 50% ON 50% ON TOFF_DELAY 90% VS VS 90% VS TON_DELAY 10% VS 10% VS Slew Rate (V/ms) TFALL TTotal_ON Adjustable Ramp Rate vs. ON Pin Current (5.5 V, 25 °C) I_ON TSLEW (typ) 20 µA 0.56 V/ms 50 µA 1.34 V/ms 100 µA 2.53 V/ms 150 µA 3.71 V/ms 200 µA 4.68 V/ms 250 µA 5.63 V/ms Adjustable Slew Rate (ON2 Pin 2 and ON1 Pin3) SLG59M1599V has a built in configurable slew control feature. The configurable slew control uses current detection method on ON1/ON2. When ON voltage rise above ON_VIH_INI (1.2 V typical), the slew control circuit will measure the current flowing into ON1/ON2. Based on the current flowing into ON1/ON2, different slew rates will be selected by the internal control circuit. See I_ON vs. Tslew table. The slew rate is configurable by selecting a different R1/R2 resistor value as shown on application diagram. Calculating the R1/R2 value depends on both the desired slew rate, and the VOH level of the device driving the ON1/ON2 pin. ON_Current = (GPIO_VOH – ON_VREF (1.05 V typical)) / R 000-0059M1599-103 Page 5 of 9 SLG59M1599V  Package Top Marking System Definition ABC Serial Number Pin 1 Identifier 000-0059M1599-103 Page 6 of 9 SLG59M1599V  SLG59M1599V Layout Suggestion Package Drawing and Dimensions 8 Lead STDFN Package 1.0 x 1.6 mm 000-0059M1599-103 Page 7 of 9 SLG59M1599V  Tape and Reel Specifications Max Units Leader (min) Nominal Reel & Package # of Package Size Hub Size Length Type Pins per Reel per Box Pockets [mm] [mm] [mm] STDFN 8L 1x1.6mm 0.4P Green 8 1.0 x 1.6 x 0.55 3,000 3,000 178 / 60 100 400 Trailer (min) Pockets Length [mm] Tape Width [mm] 100 400 8 Part Pitch [mm] 4 Carrier Tape Drawing and Dimensions Pocket BTM Pocket BTM Package Length Width Type STDFN 8L 1x1.6mm 0.4P Green Pocket Depth Index Hole Pitch Pocket Pitch Index Hole Diameter Index Hole Index Hole to Tape to Pocket Tape Width Edge Center A0 B0 K0 P0 P1 D0 E F W 1.12 1.72 0.7 4 4 1.55 1.75 3.5 8 Recommended Reflow Soldering Profile Please see IPC/JEDEC J-STD-020: latest revision for reflow profile based on package volume of 0.88 mm3 (nominal). More information can be found at www.jedec.org. 000-0059M1599-103 Page 8 of 9 SLG59M1599V  Revision History Date Version 2/4/2022 1.03 Updated Company name and logo Fixed typos 2/4/2022 1.02 Updated Company name and logo Fixed typos 11/20/2015 1.01 Added ESDCDM, MSL, and θJA specs 000-0059M1599-103 Change Page 9 of 9 IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for developers skilled in the art designing with Renesas products. You are solely responsible for (1) selecting the appropriate products for your application, (2) designing, validating, and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. Renesas grants you permission to use these resources only for development of an application that uses Renesas products. Other reproduction or use of these resources is strictly prohibited. No license is granted to any other Renesas intellectual property or to any third party intellectual property. Renesas disclaims responsibility for, and you will fully indemnify Renesas and its representatives against, any claims, damages, costs, losses, or liabilities arising out of your use of these resources. Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products. (Rev.1.0 Mar 2020) Corporate Headquarters Contact Information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners. © 2021 Renesas Electronics Corporation. All rights reserved.
SLG59M1599V 价格&库存

很抱歉,暂时无法提供与“SLG59M1599V”相匹配的价格&库存,您可以联系我们找货

免费人工找货