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20P03-HXY

20P03-HXY

  • 厂商:

    HXY(华轩阳)

  • 封装:

    TO252

  • 描述:

    类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):20A;功率(Pd):29W;导通电阻(RDS(on)@Vgs,Id):39mΩ@10V,15A;

  • 数据手册
  • 价格&库存
20P03-HXY 数据手册
HXY 20P03-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Description The 20P03-HXY uses advanced trench technology to provide excellent RDS(ON), low gate charge and D S operation with gate voltages as low as 4.5V. This G device is suitable for use as a TO252-2L Battery protection or in other Switching application. General Features D VDS = -30V I D =-20A G RDS(ON) < 42 mΩ @ VGS=10V S Application P-Channel MOSFET Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking 20P03-HXY TO252-2L 20P03 Qty(PCS) XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 -20 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 -15 A IDM Pulsed Drain Current2 -50 A PD@TC=25℃ Total Power Dissipation4 29 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 75 ℃/W RθJC Thermal Resistance Junction-Case1 4.32 ℃/W Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY 20P03-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min. Tp Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- --- V/℃ RDS(ON) VGS=-10V , ID=-15A 32 38 --- 4.6 --- --- --- -1 --- --- -5 VGS=±25V , VDS=0V --- --- ±100 nA VDS=-5V , ID=-15A --- 19 --- VDS=0V , VGS=0V , f=1MHz --- 13 --- --- 12.5 --- --- 5.4 --- Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =-250uA VDS=-24V , VGS=0V , IDSS Drain-Source Leakage Current 42 mΩ 48 60 70 -1.0 ---2.5 V VGS=-4.5V , ID=-10A VGS(th) 22 TJ=25℃ VDS=-24V , VGS=0V , mV/℃ uA TJ=55℃ IGSS Rg Gate-Source LeakageCurrent Forward Transconductance Gate Resistance Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 5 --- Td(on) Turn-On Delay Time --- 4.4 --- Tr Rise Time --- 11.2 --- Td(off) Turn-Off Delay Time --- 34 --- Tf Fall Time --- 18 --- Ciss Input Capacitance --- 1345 --- Coss Output Capacitance --- 194 --- Crss Reverse Transfer Capacitance --- 158 --- gfs VDS=-15V , VGS=-4.5V , ID=-15A VDD=-15V , VGS=-10V , RG=3.3 ID=-15A VDS=-15V , VGS=0V , f=1MHz , S nC ns pF Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY 20P03-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Electrical and Thermal Characteristics Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY 20P03-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area Figure 14 Normalized Maximum Transient Thermal Impedance Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY 20P03-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG TO252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HXY 20P03-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein in such applications. ■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein. ■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA XUAN YANG ELECTRONICS CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the HUA XUAN YANG ELECTRONICS product that you intend to use. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com
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